Abstract: A misinput avoidance method of a mobile terminal may be implemented to prevent a misinput caused by contacting unintended keys around the target key. A misinput avoidance method of a mobile terminal according to the present invention includes detecting inputs of a plurality of keys and discriminating a target key from other keys. The method also includes extracting keys around the target key and registering the keys around the target keys as neighbor keys. The method further includes processing the input of the target key while blocking the inputs of the neighbor keys. The method further includes releasing, when the target key is released, the blocking of the inputs of the neighbor keys.

Abstract: A method of processing an input signal of a portable device is provided, including collecting an input signal generated from at least one of an input unit and a touch screen; generating a preset repetitive input signal when the collected input signal corresponds to a preset condition input signal; and using an application that is currently activated based on the repetitive input signal.

Abstract: A method for fabricating a semiconductor substrate includes forming a suicide layer at a predetermined portion of a semiconductor substrate, implanting two or more impurity ions before annealing, and forming an impurity region in the semiconductor substrate by annealing the silicide layer and by diffusing the impurity ions from the silicide layer into the semiconductor substrate. Accordingly, the present invention can improve reliability and performance of a semiconductor device by reducing dopant loss and leakage current of a PN junction in the substrate and by decreasing a sheet resistance of the silicide layer. The dose of the second implanter ions is about one hundred to one thousand times less than the dose of the first implanted ions.

Abstract: A method for fabricating a semiconductor substrate includes forming a silicide layer at a predetermined portion of a semiconductor substrate, implanting two or more impurity ions before annealing, and forming an impurity region in the semiconductor substrate by annealing the silicide layer and by diffusing the impurity ions from the silicide layer into the semiconductor substrate. Accordingly, the present invention can improve reliability and performance of a semiconductor device by reducing dopant loss and leakage current of a PN junction in the substrate and by decreasing a sheet resistance of the silicide layer. The dose of the second implanter ions is about one hundred to one thousand times less than the dose of the first implanted ions.