Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.

Abstract: Provided is a laser crystallization apparatus including a beam generator generating an input laser beam, a beam converter dividing an input laser beam incident from a beam generator into a plurality of sub laser beams and disposed to have a predetermined rotation angle with respect to an optical axis parallel to a traveling direction of an input laser beam, and a beam concentrator condensing a plurality of sub laser beams and outputting an output laser beam having a beam profile having a predetermined beam width. Accordingly, a width of a stiffness area of a beam profile of an input laser beam may increase and a width of a high intensity area may decrease. Accordingly, the number of shots for the stiffness area at specific point of an amorphous silicon film may increase. Accordingly, a gradual dehydrogenation effect on an amorphous silicon film may be implemented. Accordingly, occurrence of defects in a polycrystalline silicon film formed by laser crystallization may be minimized or prevented.

Abstract: A catalyst structure includes: (1) a substrate; (2) a catalyst layer on the substrate; and (3) an adhesion layer disposed between the substrate and the catalyst layer. In some implementations, an average thickness of the adhesion layer is about 1 nm or less. In some implementations, a material of the catalyst layer at least partially extends into a region of the adhesion layer. In some implementations, the catalyst layer is characterized by a lattice strain imparted by the adhesion layer.

Abstract: An apparatus for manufacturing a display device includes a plurality of working tables, a plurality of arm modules, and a rotator. The plurality of working tables are spaced apart from each other in a first direction and are configured to support a target board. The plurality of arm modules are arranged in the first direction and spaced apart from the plurality of working tables in a second direction intersecting the first direction. The rotator is connected to the plurality of arm modules and configured to rotate about a rotation axis extending in the first direction.

Abstract: A semiconductor memory device includes a gate stack structure including insulating layers, a lower selection line and word lines, the word lines including a first word line adjacent to the lower selection line and a second word line on the first word line, a memory channel structure penetrating the gate stack structure, a plurality of first contact plugs electrically connected to the first word line, a plurality of second contact plugs electrically connected to the second word line, a first conductive line connected to the plurality of first contact plugs, and a second conductive line connected to one of the plurality of second contact plugs.

Abstract: A silicon-carbon complex comprising carbon-based particles and silicon-based particles, wherein the silicon-based particles are dispersed and positioned on surfaces of the carbon-based particles, the carbon-based particles have a specific surface area of 0.4 m2/g to 1.5 m2/g, and the silicon-based particles are doped with one or more elements selected from the group consisting of Mg, Li, Ca, and Al, and a negative electrode active material for lithium secondary battery comprising the same.

Abstract: A three-dimensional semiconductor memory device may include horizontal patterns disposed on a peripheral circuit structure and spaced apart from each other, memory structures provided on the horizontal patterns, respectively, each of the memory structures including a three-dimensional arrangement of memory cells. Penetrating insulating patterns and separation structures may isolate the horizontal patterns from one another. Through vias may extend through the penetrating insulating patterns to connect logic circuits of the peripheral circuit structure to the memory structure.

Abstract: An ingot growth apparatus is disclosed. The ingot growth apparatus according to an embodiment of the present invention may comprise: a growth furnace having a main crucible which is disposed inside the growth furnace and in which molten silicon is held in order to grow an ingot; a susceptor formed to surround the outer surface of the main crucible and heating the main crucible; a heater formed to surround the outer surface of the susceptor and including a coil which is supplied with power to generate a magnetic field and heats the susceptor by electromagnetic induction from the magnetic field; and a heat insulation member disposed between the coil and the susceptor.

Abstract: An embodiment roof assembly for a vehicle includes a roof panel including a core, an upper skin attached to a top surface of the core, and a lower skin attached to a bottom surface of the core, a face sheet disposed above the roof panel, and a foam layer interposed between the roof panel and the face sheet.

Abstract: A display panel can include a substrate, a light-emitting element including an emission region on the substrate, a reference voltage line adjacent to the light-emitting element, and a branch line connected to the reference voltage line to apply a reference voltage to light-emitting element. The light-emitting element can emit light on the emission region in a direction of the substrate. Further, the branch line can include a semiconductor layer, and the semiconductor layer of the branch line can overlap the emission region.

Abstract: Provided is a thermotherapy device, which includes a first housing (10), a second housing (20) disposed under the first housing (10), a transfer plate (30), at both sides of which transfer rollers (31) are provided, and a pair of guide rails (40) that is provided to the second housing (20) and on which the respective transfer rollers (31) of the transfer plate (30) are placed. The pair of guide rails (40) are integrally molded when the second housing (20) is injection-molded. Thus, since the guide rails on which the transfer rollers of the transfer plate travel are integrally molded when the second housing is injection-molded, inefficiency caused by mounting separate rails as in the related art is removed, and thereby assemblability, productivity, and economic efficiency of the thermotherapy device can be improved.

Abstract: An apparatus for providing brain lesion information based on an image includes a magnetic resonance angiography (MRA) provider configured to provide an environment capable of displaying 3D time-of-flight magnetic resonance angiography (3D TOF MRA) using user input, a brain lesion input unit configured to generate and manage a brain lesion image, a maximum intensity projection (MIP) converter configured to configure MIP image data including at least one image frame corresponding to a projection position of the brain lesion image, a noise remover configured to remove noise of brain lesion information and to configure corrected MIP image data, from which the noise is removed, and an MRA reconfiguration unit configured to reconfigure a corrected brain lesion image by back-projecting the corrected MIP image data.

Abstract: A display device includes: a display panel including a first region including a transmissive part configured to transmit light provided from the outside and a second region not including the transmissive part; and a sensor overlapping with the transmissive part, and configured to obtain electrical information based on information provided from the outside, wherein the display panel includes: a thin film transistor layer including a plurality of transistors; a pixel defining layer defining an emission region of a plurality of pixels; and a light blocking layer on the pixel defining layer, and defining the transmissive part, and wherein the pixel defining layer in the first region covers at least a portion of the thin film transistor layer such that light provided through the transmissive part is blocked.

Abstract: A memory controller includes a plurality of processors, a memory device and a memory manager. The memory device includes a plurality of segments, which are divided into a plurality of segment groups, to which group identifiers are respectively assigned. The memory manager is configured to map a first buffer identifier to a first group identifier from among the group identifiers, select one or more segments only from a first segment group, to which the first group identifier is assigned among the plurality of segment groups, map the first buffer identifier to the one or more segments, and allocate, to a first processor from among the plurality of processors, the first buffer identifier and the one or more segments.

Abstract: The present invention provides methods for treating or ameliorating metabolic diseases, cholestatic liver diseases, or organ fibrosis, which comprises administering to a subject a therapeutically effective amount of a pharmaceutical composition comprising an isoxazole derivative, a racemate, an enantiomer, or a diastereoisomer thereof, or a pharmaceutically acceptable salt of the derivative, the racemate, the enantiomer, or the diastereoisomer.

Abstract: An air conditioner for a vehicle including an air-conditioning case divided into a plurality of air passageways by a separation wall. A heating heat exchanger is disposed inside the air-conditioning case and exchanges heat with air to heat the interior of the vehicle. A perforated member is disposed at a downstream side of the heating heat exchanger and has a plurality of perforated holes through which the air passing the heating heat exchanger passes, and a partition wall is disposed between the heating heat exchanger and the perforated member to divide the air passageway of the air-conditioning case into a plurality of air passageways, wherein the partition wall is formed integrally with the perforated member.

Abstract: Provided is a display device including a display panel configured to include a plurality of pixels positioned on a first substrate and a plurality of scan lines positioned along a first direction; and a plurality of shift registers configured to receive a plurality of clock signals and a start signal, to generate a plurality of scan signals, and to transfer the scan signals to the scan lines, wherein a first shift register among the shift registers is positioned on a second substrate, and is connected to an adjacent second shift register positioned on the first substrate among the shift registers and a corresponding scan line through a contact hole formed in the second substrate.

Abstract: A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.

Abstract: A display device and a method of manufacturing the same are provided. The display device includes: a base substrate, a barrier layer disposed on the base substrate, a first metal layer disposed on the barrier layer, a second metal layer disposed on the base substrate and spaced apart from the first metal layer, a buffer layer disposed on the first metal layer and the second metal layer, and a plurality of thin film transistors disposed on the buffer layer, where an angle between a side surface of the barrier layer and a bottom surface of the barrier layer is equal to or more than 90 degrees and less than or equal to 150 degrees.

Abstract: Disclosure are a triboelectric generator including a nano-composite life-limited via selective ultrasound application thereto, and a neurostimulation therapy device using the same. Disclosure are a life-limited nano-composite that initiates biodegradation thereof upon application of focused ultrasound thereto, and to a neurostimulation therapy device for peripheral neuropathy treatment using an ultrasound-driven triboelectric generator based on the life-limited nano-composite. The device has a power source that is harmless to a human body and performs nerve stimulation treatment using this power source, and then causes biodegradation at a desired timing after the treatment is completed.