Patents by Inventor Dong-mok Whang

Dong-mok Whang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220200234
    Abstract: The present disclosure relates to an integrated light receiving and emitting device combined with a control circuit wafer and a manufacturing method thereof. The integrated light receiving and emitting device combined with a control circuit wafer according to an exemplary embodiment of the present disclosure includes: a light receiving and emitting unit which has an integrated wafer structure in which a light emitting unit and a light receiving unit are vertically formed on one surface of a single semiconductor substrate by wafer patterning and a control circuit wafer which is combined with the light receiving and emitting unit by vertical bonding to be operated as a single chip device, in which the control circuit wafer is connected to the light emitting unit and the light receiving unit.
    Type: Application
    Filed: November 16, 2021
    Publication date: June 23, 2022
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Byoung Lyong CHOI, Dong Mok WHANG, Sung Won MOON, Tae Jun GU
  • Patent number: 9868640
    Abstract: A graphene dot structure and a method of manufacturing the same. The graphene dot structure includes a core including a semiconductor material; and a graphene shell formed on the surface of the core. The graphene dot structure may form a network.
    Type: Grant
    Filed: November 2, 2015
    Date of Patent: January 16, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-kyung Lee, Byoung-lyong Choi, Jae-hyun Lee, Dong-mok Whang
  • Patent number: 9373602
    Abstract: According to example embodiments, a wire structure includes a first wire that includes a first wire core and a first carbon shell surrounding the first wire core, and a second wire that extends in a longitudinal direction from the first wire. The first wire core has a wire shape. The first carbon shell contains carbon.
    Type: Grant
    Filed: August 25, 2014
    Date of Patent: June 21, 2016
    Assignees: Samsung Electronics Co., Ltd., Sungkyunkwan University Foundation for Corporate Collaboration
    Inventors: Eun-kyung Lee, Byoung-lyong Choi, Won-Jae Joo, Byung-Sung Kim, Jae-Hyun Lee, Jong-Woon Lee, Dong-Mok Whang
  • Publication number: 20160052788
    Abstract: A graphene dot structure and a method of manufacturing the same. The graphene dot structure includes a core including a semiconductor material; and a graphene shell formed on the surface of the core. The graphene dot structure may form a network.
    Type: Application
    Filed: November 2, 2015
    Publication date: February 25, 2016
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-kyung LEE, Byoung-lyong CHOI, Jae-hyun LEE, Dong-mok WHANG
  • Patent number: 9230801
    Abstract: A graphene structure and a method of forming the same may include a graphene formed in a three-dimensional (3D) shape, e.g., a column shape, a stacking structure, and a three-dimensionally connected structure. The graphene structure can be formed by using Ge.
    Type: Grant
    Filed: September 9, 2011
    Date of Patent: January 5, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byoung-Iyong Choi, Eun-kyung Lee, Dong-mok Whang
  • Patent number: 9181091
    Abstract: Provided are a porous nanostructure and a method of manufacturing the same. The porous nanostructure includes a plurality of pores disposed on an exterior surface of a nanostructure, wherein at least a portion of the plurality of pores extend inside the nanostructure.
    Type: Grant
    Filed: December 3, 2010
    Date of Patent: November 10, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-kyung Lee, Dong-mok Whang, Byoung-lyong Choi, Sun-hwak Woo
  • Patent number: 9178020
    Abstract: A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer.
    Type: Grant
    Filed: December 3, 2014
    Date of Patent: November 3, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byoung-lyong Choi, Eun-kyung Lee, Dong-mok Whang
  • Patent number: 9172022
    Abstract: A composite structure of graphene and polymer and a method of manufacturing the complex. The composite structure of graphene and polymer includes: at least one polymer structure having a three-dimensional shape; and a graphene layer formed on the at least one polymer structure.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: October 27, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-kyung Lee, Byoung-lyong Choi, Seung-nam Cha, Jae-hyun Lee, Dong-mok Whang
  • Publication number: 20150144885
    Abstract: A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer.
    Type: Application
    Filed: December 3, 2014
    Publication date: May 28, 2015
    Applicants: SAMSUNG ELECTRONICS CO., LTD., SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION
    Inventors: Byoung-Iyong CHOI, Eun-kyung LEE, Dong-mok WHANG
  • Publication number: 20150061161
    Abstract: According to example embodiments, a wire structure includes a first wire that includes a first wire core and a first carbon shell surrounding the first wire core, and a second wire that extends in a longitudinal direction from the first wire. The first wire core has a wire shape. The first carbon shell contains carbon.
    Type: Application
    Filed: August 25, 2014
    Publication date: March 5, 2015
    Applicant: Sungkyunkwan University Foundation for Corporate Collaboration
    Inventors: Eun-kyung LEE, Byoung-lyong CHOI, Won-Jae JOO, Byung-Sung KIM, Jae-Hyun LEE, Jong-Woon LEE, Dong-Mok WHANG
  • Patent number: 8927414
    Abstract: A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer.
    Type: Grant
    Filed: May 14, 2012
    Date of Patent: January 6, 2015
    Assignees: Samsung Electronics Co., Ltd., Sungkyunkwan University Foundation for Corporate Collaboration
    Inventors: Byoung-Iyong Choi, Eun-kyung Lee, Dong-mok Whang
  • Patent number: 8679976
    Abstract: A method of manufacturing graphene includes forming a germanium layer on a surface of a substrate, and forming the graphene directly on the germanium layer by supplying carbon-containing gas into a chamber in which the substrate is disposed.
    Type: Grant
    Filed: December 22, 2010
    Date of Patent: March 25, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-kyung Lee, Byoung-Iyong Choi, Dong-mok Whang, Jae-hyun Lee
  • Patent number: 8513101
    Abstract: A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition (“CVD”) method.
    Type: Grant
    Filed: September 16, 2009
    Date of Patent: August 20, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-kyung Lee, Dong-mok Whang, Byoung-lyong Choi, Byung-sung Kim
  • Patent number: 8480931
    Abstract: A composite structure and a method of manufacturing the composite structure. The composite structure includes a graphene sheet; and a nanostructure oriented through the graphene sheet and having a substantially one-dimensional shape.
    Type: Grant
    Filed: April 23, 2010
    Date of Patent: July 9, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byoung-lyong Choi, Eun-kyung Lee, Dong-mok Whang, Byung-sung Kim
  • Publication number: 20120326115
    Abstract: A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer.
    Type: Application
    Filed: May 14, 2012
    Publication date: December 27, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byoung-lyong CHOI, Eun-kyung LEE, Dong-mok WHANG
  • Publication number: 20120141700
    Abstract: A graphene structure and a method of forming the same may include a graphene formed in a three-dimensional (3D) shape, e.g., a column shape, a stacking structure, and a three-dimensionally connected structure. The graphene structure can be formed by using Ge.
    Type: Application
    Filed: September 9, 2011
    Publication date: June 7, 2012
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Byoung-lyong CHOI, Eun-kyung LEE, Dong-mok WHANG
  • Publication number: 20110297202
    Abstract: A thermoelectric material including: a nanostructure; a discontinuous area disposed in the nanostructure, and an uneven portion disposed on the nano structure.
    Type: Application
    Filed: May 24, 2011
    Publication date: December 8, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-kyung LEE, Byoung-lyong CHOI, Jun-ho LEE, Dong-mok WHANG, Jong-woon LEE
  • Publication number: 20110244662
    Abstract: A method of manufacturing graphene includes forming a germanium layer on a surface of a substrate, and forming the graphene directly on the germanium layer by supplying carbon-containing gas into a chamber in which the substrate is disposed.
    Type: Application
    Filed: December 22, 2010
    Publication date: October 6, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-kyung LEE, Byoung-lyong CHOI, Dong-mok WHANG, Jae-hyun LEE
  • Patent number: 8007862
    Abstract: Provided are a method of preparing a nanowire grid polarizer, and a nanowire grid polarizer prepared using the same. The method includes: mixing a surfactant and a silica precursor to prepare a mesoporous film composition; coating the mesoporous film composition on a substrate; aging the coated product to form a silica template composite; removing the surfactant inside the silica template composite to prepare a mesoporous material having channels; and filling the channels of the mesoporous material with metal. The method is suitable for the formation of a nanowire having a stable structure, mass production, and large-area production.
    Type: Grant
    Filed: March 28, 2008
    Date of Patent: August 30, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Su-mi Lee, Dong-mok Whang, Moon-gyu Lee, Yoon-sun Choi, Sun-hwak Woo
  • Publication number: 20110133153
    Abstract: Provided are a porous nanostructure and a method of manufacturing the same. The porous nanostructure includes a plurality of pores disposed on an exterior surface of a nanostructure, wherein at least a portion of the plurality of pores extend inside the nanostructure.
    Type: Application
    Filed: December 3, 2010
    Publication date: June 9, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-kyung LEE, Dong-mok WHANG, Byoung-lyong CHOI, Sun-hwak WOO