Patents by Inventor Dong-Oh Kim

Dong-Oh Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180175143
    Abstract: A semiconductor device including a substrate with a first trench, a first insulation liner on inner flanks of the first trench, and a second insulation liner on inner flanks of a first sub trench, the first insulation trench defined by the first insulation liner in the first trench, a top level of the second insulation liner that adjoins the inner flanks of the first sub trench in a direction perpendicular to a top surface of the substrate being different from the top surface of the substrate outside the first trench, may be provided.
    Type: Application
    Filed: December 6, 2017
    Publication date: June 21, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Chan-sic YOON, Ki-seok Lee, Ki-wook Jung, Dong-oh Kim, Ho-in Lee, Je-min Park, Seok-han Park, Augustin Hong, Ju-yeon Jang, Hyeon-ok Jung, Yu-jin Seo
  • Publication number: 20180175038
    Abstract: A method for fabricating a semiconductor device includes forming a device isolation film on a substrate between first and second regions, forming first and second sealing films, such that an etch selectivity of the second sealing film is smaller than that of the first sealing film, patterning the first and second sealing films to expose the second region and a portion of the device isolation film, such that an undercut is defined under a lower surface of the second sealing film, forming a filling film filling the undercut, a thickness of the filling film being thicker on a side surface of the second sealing film than on an upper surface thereof, removing a portion of the filling film to form a filling spacer in the undercut, forming a high-k dielectric film and a metal film on the filling spacer, and patterning the high-k dielectric film and the metal film.
    Type: Application
    Filed: September 22, 2017
    Publication date: June 21, 2018
    Inventors: Ho In LEE, Dong Oh KIM, Seok Han PARK, Chan Sic YOON, Ki Wook JUNG, Jinwoo Augustin HONG, Je Min PARK, Ki Seok LEE, Ju Yeon JANG
  • Publication number: 20180158669
    Abstract: Methods for manufacturing a semiconductor device include forming a gate line extending in a first direction in a substrate, and an impurity region on a side surface of the gate line, forming an insulating film pattern on the substrate, the insulating film pattern extending in the first direction and comprising a first through-hole that is configured to expose the impurity region, forming a barrier metal layer on the first through-hole, forming a conductive line contact that fills the first through-hole and that is electrically connected to the impurity region, fowling a first mask pattern on the conductive line contact and the insulating film pattern, the first mask pattern extending in a second direction that is different from the first direction and the first mask pattern comprising a first opening, and removing corners of the barrier metal layer by partially etching the barrier metal layer.
    Type: Application
    Filed: February 1, 2018
    Publication date: June 7, 2018
    Inventors: Chan Sic Yoon, Ki Seok Lee, Dong Oh Kim, Yong Jae Kim
  • Patent number: 9965353
    Abstract: A distributed file system, based on a torus network, includes a center node and one or more storage nodes. The center node encodes data when the data is received from a client. The one or more storage nodes receive data blocks or parity blocks from the center node and store the data blocks or parity blocks.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: May 8, 2018
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Chei Yol Kim, Dong Oh Kim, Young Kyun Kim, Hong Yeon Kim
  • Patent number: 9916979
    Abstract: Methods for manufacturing a semiconductor device include forming a gate line extending in a first direction in a substrate, and an impurity region on a side surface of the gate line, forming an insulating film pattern on the substrate, the insulating film pattern extending in the first direction and comprising a first through-hole that is configured to expose the impurity region, forming a barrier metal layer on the first through-hole, forming a conductive line contact that fills the first through-hole and that is electrically connected to the impurity region, forming a first mask pattern on the conductive line contact and the insulating film pattern, the first mask pattern extending in a second direction that is different from the first direction and the first mask pattern comprising a first opening, and removing corners of the barrier metal layer by partially etching the barrier metal layer.
    Type: Grant
    Filed: December 16, 2016
    Date of Patent: March 13, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chan Sic Yoon, Ki Seok Lee, Dong Oh Kim, Yong Jae Kim
  • Publication number: 20170309469
    Abstract: Methods for manufacturing a semiconductor device include forming a gate line extending in a first direction in a substrate, and an impurity region on a side surface of the gate line, forming an insulating film pattern on the substrate, the insulating film pattern extending in the first direction and comprising a first through-hole that is configured to expose the impurity region, forming a barrier metal layer on the first through-hole, forming a conductive line contact that fills the first through-hole and that is electrically connected to the impurity region, forming a first mask pattern on the conductive line contact and the insulating film pattern, the first mask pattern extending in a second direction that is different from the first direction and the first mask pattern comprising a first opening, and removing corners of the barrier metal layer by partially etching the barrier metal layer.
    Type: Application
    Filed: December 16, 2016
    Publication date: October 26, 2017
    Inventors: Chan Sic YOON, Ki Seok LEE, Dong Oh KIM, Yong Jae KIM
  • Publication number: 20170278847
    Abstract: A semiconductor device includes a substrate including a cell area and a background area, the background area surrounding the cell area, a plurality of active patterns in the cell area along a first direction, the active patterns being defined by a device isolation layer, and a background pattern filling the background area to surround the cell area, wherein the active patterns include a first active pattern most adjacent to an edge of the cell area, and a second active pattern separated from the first active pattern in a second direction intersecting the first direction, the second active pattern being separated from the background area.
    Type: Application
    Filed: March 17, 2017
    Publication date: September 28, 2017
    Inventors: Dong Oh KIM, Chan Sic YOON, Ki Seok LEE, Yong Jae KIM
  • Publication number: 20170212802
    Abstract: A distributed file system based on a torus network includes a center node configured to encode data when the data is received from a client and one or more storage nodes configured to receive data blocks or parity blocks generated by the encoding from the center node and store the data blocks or parity blocks.
    Type: Application
    Filed: May 25, 2016
    Publication date: July 27, 2017
    Inventors: Chei Yol KIM, Dong Oh KIM, Young Kyun KIM, Hong Yeon KIM
  • Publication number: 20170213724
    Abstract: A method for manufacturing a semiconductor device includes forming features of a first mold pattern on a substrate including a first region and a second region, and forming a first insulation layer covering the first mold pattern from the first region to the second region. The method further includes forming a photoresist pattern on the first insulation layer in the second region, forming a second insulation layer covering the first insulation layer in the first region and the photoresist pattern in the second region from the first region to the second region, etching the second insulation layer, removing the photoresist pattern, and forming a first double patterning technology pattern having a first width in the first region and a second DPT pattern having a second width in the second region, wherein the second width is different from the first width.
    Type: Application
    Filed: October 12, 2016
    Publication date: July 27, 2017
    Inventors: Chan Sic YOON, Ki Seok LEE, Dong Oh KIM
  • Patent number: 9069821
    Abstract: The present invention relates to a file processing method using a data server included in a storage system, such as a Network File System (NFS) or a Distributed File System (DFS). When a file request is received from a client, a file corresponding to the request is loaded. Processing requested by the client is performed on the loaded file. A result file on which the processing has been performed is generated and transmitted to the client. Accordingly, the redundant resources of the data server can be sufficiently used, unnecessary data transmission can be reduced, and the resources of the storage system can be efficiently used.
    Type: Grant
    Filed: April 15, 2013
    Date of Patent: June 30, 2015
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventor: Dong-Oh Kim
  • Publication number: 20140229515
    Abstract: An apparatus for managing files in a hybrid storage system establishes a file management policy based on a directory unit using files stored in first and second storage devices and manages the files of the first storage device and the second storage device in accordance with the established file management policy based on the directory unit.
    Type: Application
    Filed: June 21, 2013
    Publication date: August 14, 2014
    Inventors: Dong Oh KIM, Hong Yeon KIM, Young Kyun KIM
  • Publication number: 20120167103
    Abstract: Disclosed are an apparatus and a method for parallel processing continuous processing tasks in a distributed data stream processing system. A system for processing a distributed data stream according to an exemplary embodiment of the present invention includes a control node configured to determine whether a parallel processing of continuous processing tasks for an input data stream is required and if the parallel processing is required, instruct to divide the data stream and allocate the continuous processing tasks for processing the data streams to a plurality of distributed processing nodes, and a plurality of distributed processing nodes configured to divide the input data streams, allocate the divided data stream and the continuous processing tasks for processing the divided data streams, respectively, and combine the processing results, according to the instruction of the control node.
    Type: Application
    Filed: December 19, 2011
    Publication date: June 28, 2012
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Dong Oh KIM, Mi Young LEE
  • Publication number: 20120158816
    Abstract: Disclosed are service providing method and device, including: collecting execution state information about a plurality of tasks that constitute at least one service, and are dynamically distributed and arranged over a plurality of nodes; and performing scheduling based on the collected execution state information about the plurality of tasks, wherein each of the plurality of tasks has at least one input source and output source, and a unit of data to be processed for each input source and a data processing operation are defined by a user, and the scheduling is to delete at least a portion of data input into at least one task or to process the at least a portion of input data in at least one duplicate task by referring to the defined unit of data. In particular, the present invention may effectively provide a service of analyzing and processing large stream data in semi-real time.
    Type: Application
    Filed: December 14, 2011
    Publication date: June 21, 2012
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Hyun Hwa CHOI, Young Chang KIM, Byoung Seob KIM, Myung Cheol LEE, Dong Oh KIM, Hun Soon LEE, Mi Young LEE
  • Patent number: 7664374
    Abstract: The invention generally relates to a digital convergent recorder. The digital convergent recorder may generate and record into a storage device (e.g. HDD) a first digital data in a first compress format (e.g. MPEG2) out of an external input analog AV signal or a digital broadcasting signal, may generate and transmit via internet to an external computer a second digital data in a second compress format (e.g. M-JPEG) out of the external input analog AV signal or an analog AV signal obtained by decoding the first data from the storage device, and may control the MPEG2 encoding/recording mode responding to a user command received through a specific command/control protocol from the external computer.
    Type: Grant
    Filed: July 12, 2004
    Date of Patent: February 16, 2010
    Assignee: Kaonmedia Co., Ltd.
    Inventors: Dong-Oh Kim, Hyun-Chul Kim
  • Publication number: 20070263989
    Abstract: The invention generally relates to a digital convergent recorder. The digital convergent recorder may generate and record into a storage device (e.g. HDD) a first digital data in a first compress format (e.g. MPEG2) out of an external input analog AV signal or a digital broadcasting signal, may generate and transmit via internet to an external computer a second digital data in a second compress format (e.g. M-JPEG) out of the external input analog AV signal or an analog AV signal obtained by decoding the first data from the storage device, and may control the MPEG2 encoding/recording mode responding to a user command received through a specific command/control protocol from the external computer.
    Type: Application
    Filed: July 12, 2004
    Publication date: November 15, 2007
    Inventors: Dong-Oh Kim, Hyun-Chul Kim