Patents by Inventor Dong-Seok Nam
Dong-Seok Nam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240075853Abstract: An apparatus of tilting a seat cushion of a vehicle, includes a tilting motor, a pinion gear, a sector gear, and a tilting link which perform the tilting operation of the seat cushion and exert a binding force in a tilted state of the seat cushion and are provided to be connected to both of one side and the other side of a seat cushion frame, and has two sector gears positioned on left and right sides and connected to each other by a connection bar so that, by strengthening a binding force of the front portion of the seat cushion, it is possible to secure the safety of passengers in the event of a collision.Type: ApplicationFiled: April 13, 2023Publication date: March 7, 2024Applicants: Hyundai Motor Company, Kia Corporation, DAS CO., LTD, Faurecia Korea, Ltd., Hyundai Transys Inc.Inventors: Sang Soo LEE, Mu Young KIM, Sang Hark LEE, Ho Suk JUNG, Sang Do PARK, Chan Ho JUNG, Dong Hoon LEE, Hea Yoon KANG, Deok Soo LIM, Seung Pil JANG, Seon Ho KIM, Jong Seok YUN, Hyo Jin KIM, Dong Gyu SHIN, Jin Ho SEO, Young Jun KIM, Taek Jun NAM
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Patent number: 11397380Abstract: A critical dimension measurement system includes a voltage measurement circuit, a control circuit, and a critical dimension measurement circuit. The voltage measurement circuit may measure potentials of mask patterns of a photomask. The control circuit may include an information storage circuit for storing distribution information on the potentials of the mask patterns, measured by the voltage measurement circuit, and information on layout patterns corresponding to the mask patterns of the photomask. The critical dimension measurement circuit may be operated, by the control circuit, in a first measurement mode and a second measurement mode running for a shorter time than the first measurement mode, and measure critical dimensions of the mask patterns.Type: GrantFiled: November 6, 2020Date of Patent: July 26, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won Joo Park, Hyung Joo Lee, Seuk Hwan Choi, Dong Seok Nam, Yoon Taek Han
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Publication number: 20210055648Abstract: A critical dimension measurement system includes a voltage measurement circuit, a control circuit, and a critical dimension measurement circuit. The voltage measurement circuit may measure potentials of mask patterns of a photomask. The control circuit may include an information storage circuit for storing distribution information on the potentials of the mask patterns, measured by the voltage measurement circuit, and information on layout patterns corresponding to the mask patterns of the photomask. The critical dimension measurement circuit may be operated, by the control circuit, in a first measurement mode and a second measurement mode running for a shorter time than the first measurement mode, and measure critical dimensions of the mask patterns.Type: ApplicationFiled: November 6, 2020Publication date: February 25, 2021Inventors: WON JOO PARK, HYUNG JOO LEE, SEUK HWAN CHOI, DONG SEOK NAM, YOON TAEK HAN
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Patent number: 10831095Abstract: A critical dimension measurement system includes a voltage measurement circuit, a control circuit, and a critical dimension measurement circuit. The voltage measurement circuit may measure potentials of mask patterns of a photomask. The control circuit may include an information storage circuit for storing distribution information on the potentials of the mask patterns, measured by the voltage measurement circuit, and information on layout patterns corresponding to the mask patterns of the photomask. The critical dimension measurement circuit may be operated, by the control circuit, in a first measurement mode and a second measurement mode running for a shorter time than the first measurement mode, and measure critical dimensions of the mask patterns.Type: GrantFiled: May 8, 2018Date of Patent: November 10, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won Joo Park, Hyung Joo Lee, Seuk Hwan Choi, Dong Seok Nam, Yoon Taek Han
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Patent number: 8968970Abstract: A phase shift mask having a first region and a second region in a transverse direction includes a transparent layer, a phase shift pattern disposed in the first region, a transmittance control layer pattern disposed in the second region, and a shading layer pattern disposed on the transmittance control layer pattern. The phase shift pattern has a first pattern including a transparent material and a second pattern including metal. The phase shift mask may prevent haze effects through a cleaning process using an alkaline cleaning solution.Type: GrantFiled: December 19, 2012Date of Patent: March 3, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Se-Gun Moon, Dong-Seok Nam, Hoon Kim
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Patent number: 8865375Abstract: Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.Type: GrantFiled: December 6, 2012Date of Patent: October 21, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Il-Yong Jang, Hoon Kim, Hye-Kyoung Lee, Sang-Gyun Woo, Dong-Seok Nam
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Publication number: 20140170534Abstract: A phase shift mask having a first region and a second region in a transverse direction includes a transparent layer, a phase shift pattern disposed in the first region, a transmittance control layer pattern disposed in the second region, and a shading layer pattern disposed on the transmittance control layer pattern. The phase shift pattern has a first pattern including a transparent material and a second pattern including metal. The phase shift mask may prevent haze effects through a cleaning process using an alkaline cleaning solution.Type: ApplicationFiled: December 19, 2012Publication date: June 19, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Se-Gun MOON, Dong-Seok Nam, Hoon Kim
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Publication number: 20140145091Abstract: An electron beam exposure apparatus may include a plurality of electron guns, a condenser lens, a position-adjusting unit and an aperture plate. The electron guns may emit electron beams to a substrate. The condenser lens may be arranged between the electron guns and the substrate to concentrate the electron beams. The position-adjusting unit may individually adjust positions of the electron guns to provide the concentrated electron beam with a uniform intensity. The aperture plate may be arranged between the substrate and the condenser lens. The aperture plate may have a plurality of apertures through which the concentrated electron beams are incident.Type: ApplicationFiled: November 20, 2013Publication date: May 29, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventor: Dong-Seok Nam
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Patent number: 8568944Abstract: A reflective EUV mask and a method of manufacturing the same, the reflective EUV mask including a mask substrate having an exposing region and a peripheral region, the mask substrate including a light scattering crystalline portion that scatters light incident to the peripheral region and that decreases reflectivity of the peripheral region; a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening that exposes the crystalline portion; and an absorbing layer pattern on an upper surface of the reflective layer, the absorbing layer pattern having a second opening in fluidic communication with the first opening.Type: GrantFiled: March 16, 2012Date of Patent: October 29, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Hoon Kim, Young-Su Sung, Young-Kuen Kim, Dong-Seok Nam
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Patent number: 8524426Abstract: A method for correcting a position error of a lithography apparatus comprises inputting position data of exposure pattern, irradiating laser light onto a position reference mask from a position measurement laser system, calculating actual position data of the laser light irradiated onto the position reference mask, and comparing the position data of the exposure pattern with the actual position data of the laser light irradiated onto the position reference mask. With this method, circuit patterns can be accurately formed at predetermined positions on a photomask, and the circuit patterns on the photomask can be accurately formed at predetermined positions on a wafer.Type: GrantFiled: April 27, 2012Date of Patent: September 3, 2013Assignee: Samsung Electronics Co. Ltd.Inventors: Jin Choi, Dong-Seok Nam
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Patent number: 8435705Abstract: A method of correcting an optical parameter in a photomask is provided. The method includes providing a photomask, exposing the photomask, detecting an aerial image to estimate the photomask, and irradiating gas cluster ion beams to the photomask based on an estimation result to correct the optical parameter in the photomask in relation to the aerial image. The gas cluster ion beams may be irradiated to a front surface of the photomask on which a mask pattern is formed or a rear surface of the photomask on which the mask pattern is not formed.Type: GrantFiled: March 28, 2011Date of Patent: May 7, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Haek-seung Han, Dong-seok Nam, Sang-gyun Woo
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Patent number: 8361679Abstract: A phase shift mask having a first region and a second region in a transverse direction includes a transparent layer, a phase shift pattern disposed in the first region, a transmittance control layer pattern disposed in the second region, and a shading layer pattern disposed on the transmittance control layer pattern. The phase shift pattern has a first pattern including a transparent material and a second pattern including metal. The phase shift mask may prevent haze effects through a cleaning process using an alkaline cleaning solution.Type: GrantFiled: October 8, 2010Date of Patent: January 29, 2013Assignee: Samsung Electronics Co. Ltd.Inventors: Se-Gun Moon, Dong-Seok Nam, Hoon Kim
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Patent number: 8329363Abstract: Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.Type: GrantFiled: October 21, 2010Date of Patent: December 11, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Il-Yong Jang, Hoon Kim, Hye-Kyoung Lee, Sang-Gyun Woo, Dong-Seok Nam
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Publication number: 20120237860Abstract: A reflective EUV mask and a method of manufacturing the same, the reflective EUV mask including a mask substrate having an exposing region and a peripheral region, the mask substrate including a light scattering crystalline portion that scatters light incident to the peripheral region and that decreases reflectivity of the peripheral region; a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening that exposes the crystalline portion; and an absorbing layer pattern on an upper surface of the reflective layer, the absorbing layer pattern having a second opening in fluidic communication with the first opening.Type: ApplicationFiled: March 16, 2012Publication date: September 20, 2012Inventors: Hoon KIM, Young-Su Sung, Young-Kuen Kim, Dong-Seok Nam
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Publication number: 20120214092Abstract: A method for correcting a position error of a lithography apparatus comprises inputting position data of exposure pattern, irradiating laser light onto a position reference mask from a position measurement laser system, calculating actual position data of the laser light irradiated onto the position reference mask, and comparing the position data of the exposure pattern with the actual position data of the laser light irradiated onto the position reference mask. With this method, circuit patterns can be accurately formed at predetermined positions on a photomask, and the circuit patterns on the photomask can be accurately formed at predetermined positions on a wafer.Type: ApplicationFiled: April 27, 2012Publication date: August 23, 2012Inventors: Jin CHOI, Dong-Seok NAM
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Patent number: 8187778Abstract: A method for correcting a position error of a lithography apparatus comprises inputting position data of exposure pattern, irradiating laser light onto a position reference mask from a position measurement laser system, calculating actual position data of the laser light irradiated onto the position reference mask, and comparing the position data of the exposure pattern with the actual position data of the laser light irradiated onto the position reference mask. With this method, circuit patterns can be accurately formed at predetermined positions on a photomask, and the circuit patterns on the photomask can be accurately formed at predetermined positions on a wafer.Type: GrantFiled: February 17, 2010Date of Patent: May 29, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Jin Choi, Dong-Seok Nam
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Publication number: 20110244374Abstract: A method of correcting an optical parameter in a photomask is provided. The method includes providing a photomask, exposing the photomask, detecting an aerial image to estimate the photomask, and irradiating gas cluster ion beams to the photomask based on an estimation result to correct the optical parameter in the photomask in relation to the aerial image. The gas cluster ion beams may be irradiated to a front surface of the photomask on which a mask pattern is formed or a rear surface of the photomask on which the mask pattern is not formed.Type: ApplicationFiled: March 28, 2011Publication date: October 6, 2011Inventors: Haek-seung Han, Dong-seok Nam, Sang-gyun Woo
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Patent number: 7956983Abstract: Example embodiments of the present invention may provide exposure equipment having an auxiliary photo mask. The exposure equipment may include a light source and a first photo mask spaced apart from the light source by a desired distance. A second photo mask may include a third region and a fourth region. An exposure method using the exposure equipment also may be provided.Type: GrantFiled: December 7, 2006Date of Patent: June 7, 2011Assignee: Samsung Electronics Co., Ltd.Inventor: Dong-Seok Nam
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Publication number: 20110104591Abstract: Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.Type: ApplicationFiled: October 21, 2010Publication date: May 5, 2011Inventors: Il-Yong Jang, Hoon Kim, Hye-Kyoung Lee, Sang-Gyun Woo, Dong-Seok Nam
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Publication number: 20110086296Abstract: A phase shift mask having a first region and a second region in a transverse direction includes a transparent layer, a phase shift pattern disposed in the first region, a transmittance control layer pattern disposed in the second region, and a shading layer pattern disposed on the transmittance control layer pattern. The phase shift pattern has a first pattern including a transparent material and a second pattern including metal. The phase shift mask may prevent haze effects through a cleaning process using an alkaline cleaning solution.Type: ApplicationFiled: October 8, 2010Publication date: April 14, 2011Applicant: Samsung Electronics Co., LtdInventors: Se-Gun Moon, Dong-Seok Nam, Hoon Kim