Abstract: Provided is a positive electrode active material capable of achieving a lithium secondary battery having excellent initial charge and discharge efficiency, life characteristics, and thermal stability and a preparation method thereof, wherein the positive electrode active material of the present invention includes a core portion including a lithium transition metal oxide wherein a mole ratio of nickel (Ni) in total transition metals is 80 mol % or more, and a layer-structured shell portion formed on the core portion and including a lithium transition metal oxide in which a molar ratio of manganese (Mn) in the total transition metals is 30 mol % or more, and satisfies Equation 1: 0.005 ? Thickness ? of ? the ? shell ? portion ( ?m ) Average ? particle ? diameter ( D 50 ) ? of ? the ? positive ? electrode ? ? active ? material ( ?m ) ? 0.15 .

Abstract: Described apparatuses and methods enable communication between a host device and a memory device to establish relative delays between different data lines. If data signals propagate along a bus with the same timing, simultaneous switching output (SSO) and crosstalk can adversely impact channel timing budget parameters. An example system includes an interconnect having multiple data lines that couple the host device to the memory device. In example operations, the host device can transmit to the memory device a command indicative of a phase offset between two or more data lines of the multiple data lines. The memory device can implement the command by transmitting or receiving signals via the interconnect with different relative phase offsets between data lines. The host device (e.g., a memory controller) can determine appropriate offsets for a given apparatus. Lengths of the offsets can vary. Further, a system can activate the phase offsets based on frequency.

Abstract: An electronic device may have a display with touch sensors. One or more shielding layers may be interposed between the display and the touch sensors. The display may include transistors with gate conductors, a first planarization layer formed over the gate conductors, one or more contacts formed in a first source-drain layer within the first planarization layer, a second planarization layer formed on the first planarization layer, one or more data lines formed in a second source-drain layer within the second planarization layer, a third planarization layer formed on the second planarization layer, and a data line shielding structure formed at least partly in a third source-drain layer within the third planarization layer. The data line shielding structure may be a routing line, a blanket layer, a mesh layer formed in one or more metal layers, and/or a data line covering another data line.

Abstract: An antiferroelectric and a method for manufacturing an antiferroelectric are disclosed herein. The antiferroelectric may have high permittivity and breakdown voltage by having a PbxLa1-x([Zr1-YSnY]ZTi1-Z) composition. The manufacturing of the antiferroelectric may be performed through appropriate mixing and dysprosium addition.

Abstract: A method for processing contents at an electronic device is provided. The method includes generating a first content corresponding to a user input applied to content via the electronic device, and displaying a floating user interface (UI), which displays first scrap information on the first content, on a screen of the electronic device.