Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: A method includes the steps of (a) adding an organosilicon compound containing methyl groups and a surfactant into water, mixing well and carrying out hydrolysis to get a mixed aqueous solution; (b) mixing the mixed aqueous solution with 0.1-0.2M ammonium hydroxide and a remaining percentage of an organic solvent, and stirring the mixture under nitrogen atmosphere for emulsion polymerization to get a water-in-oil (w/o) emulsion; and (c) removing the organic solvent and drying the w/o emulsion to get aerogel particles. Thereby the aerogel particles are produced by the present method without hydrophobic treatment and solvent exchange. Therefore the cost and time used for preparing the aerogel particles are saved.

Abstract: Aerogel particles and a method of making the same are revealed. The method includes the steps of (a) adding a siloxane compound containing methyl groups and a surfactant into water, mixing well and carrying out hydrolysis to get a mixed aqueous solution; (b) mixing the mixed aqueous solution with 0.1-0.2M ammonium hydroxide and a remaining percentage of an organic solvent, and stirring the mixture under nitrogen atmosphere for emulsion polymerization to get a water-in-oil (w/o) lotion; and (c) removing the organic solvent and drying the w/o lotion to get aerogel particles. Thereby the aerogel particles are produced by the present method without hydrophobic treatment and solvent exchange. Therefore the cost and time used for preparing the aerogel particles are saved.