Abstract: There is provided a method for etching magnetic tunnel junction, using an etching apparatus including a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a coating chamber, and a vacuum transmission chamber. The method completes the etching of the magnetic tunnel junction in the reactive ion plasma etching chamber, performs ion beam cleaning in the ion beam etching chamber, and performs coating protection in the coating chamber. The transmission among the respective chambers is all in a vacuum state. The invention can overcome the bottleneck in the production of high-density small devices, while greatly improving the yield, reliability and production efficiency of the devices.

Abstract: A semiconductor device manufacturing method, wherein the etching apparatus used includes a sample loading chamber (15), a vacuum transition chamber (14), a reactive ion plasma etching chamber (10), an ion beam etching chamber (11), a film coating chamber (12), and a vacuum transport chamber (13). Without interrupting the vacuum, reactive ion etching is first adopted to etch to an isolation layer (102); then, ion beam etching is performed to etch into a fixed layer (101) and stopped near a bottom electrode metal layer (100), leaving only a small amount of the fixed layer (101); subsequently, reactive ion etching is adopted to etch to the bottom electrode metal layer (100); and finally, ion beam cleaning is performed to remove metal residues and sample surface treatment, and coating protection is performed.

Abstract: Disclosed is a method for manufacturing a magnetic tunnel junction, using an etching apparatus including a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a coating chamber and a vacuum transmission chamber, wherein a magnetic tunnel junction is etched, cleaned and coated for protection without interrupting a vacuum by using the reactive ion plasma etching chamber, the ion beam etching chamber, and the coating chamber in combination. The invention can effectively reduce damages and contaminations of devices, avoid the influence caused by over-etching, and improve performance of devices; at the same time, it can accurately control the steepness of an etching pattern and obtain a pattern result that meets performance requirements.

Abstract: Disclosed is method for etching a magnetic tunnel junction. An etching apparatus used comprises a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a film coating chamber and a vacuum transport chamber. The method comprises multiple performances of the steps of reactive ion and plasma etching, ion beam etching and film coating. Multiple performances of entry into and exit from the chambers are required during the process, and the delivery between the chambers is performed under vacuum.

Abstract: An etching device and method of inductively coupled plasma. The etching device of inductively coupled plasma includes an etching chamber, an excitation radio-frequency power supply, and a first bias radio-frequency power supply, and further includes a second bias radio-frequency power supply. The frequency of the second bias radio-frequency power supply is significantly lower than that of the first bias radio-frequency power supply. The etching rate and angle are controllable by means of the process of controlling distribution of ion energy by adjusting the radio-frequency bias of different frequencies, so as to adjust etching. In addition, since the mean free path of ions is larger, and the power utilization rate of etching is higher at the low pressure and low bias radio-frequency frequencies, rapid etching is achieved at relatively low power to implement green and energy-saving processing. The disclosure is applicable to the etching of magnetic tunnel junctions.

Abstract: A method for etching magnetic tunnel junction of single isolation layer, using an etching apparatus including a sample loading chamber, a vacuum transition chamber, a reactive ion etching chamber, an ion beam etching chamber, a coating chamber, and a vacuum transmission chamber, is applicable for the reactive ion etching chamber, ion beam etching chamber and coating chamber to process and treat a wafer according to specific steps without interrupting a vacuum. It can effectively alleviate the influence of masking effect in the production process of high-density small devices.

Abstract: A semiconductor device manufacturing method, wherein the etching apparatus used includes a sample loading chamber (15), a vacuum transition chamber (14), a reactive ion plasma etching chamber (10), an ion beam etching chamber (11), a film coating chamber (12), and a vacuum transport chamber (13). Without interrupting the vacuum, reactive ion etching is first adopted to etch to an isolation layer (102); then, ion beam etching is performed to etch into a fixed layer (101) and stopped near a bottom electrode metal layer (100), leaving only a small amount of the fixed layer (101); subsequently, reactive ion etching is adopted to etch to the bottom electrode metal layer (100); and finally, ion beam cleaning is performed to remove metal residues and sample surface treatment, and coating protection is performed.

Abstract: A multilayer magnetic tunnel junction etching method and an MRAM device. A wafer is processed according to particular steps without interrupting vacuum. A reactive ion plasma etching chamber (10) and an ion beam etching chamber (11) are used separately at least one time. The processing of a multilayer magnetic tunnel junction is always in a vacuum environment, thereby avoiding the impact of an external environment on etching. By means of the process of combining etching and cleaning, a device structure maintains good steepness, and the metal contamination and damage of a magnetic tunnel junction film structure are significantly decreased, thereby greatly increasing the performance and reliability of a device. In addition, use of both the ion beam etching chamber (11) and the reactive ion plasma etching chamber (10) solves the technical problem of an existing single etching method, and increases production efficiency and etching process precision.

Abstract: There is provided a method for etching magnetic tunnel junction, using an etching apparatus including a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a coating chamber, and a vacuum transmission chamber. The method completes the etching of the magnetic tunnel junction in the reactive ion plasma etching chamber, performs ion beam cleaning in the ion beam etching chamber, and performs coating protection in the coating chamber. The transmission among the respective chambers is all in a vacuum state. The invention can overcome the bottleneck in the production of high-density small devices, while greatly improving the yield, reliability and production efficiency of the devices.

Abstract: A lower electrode wafer chuck of an etching machine comprises an upper stage, configured for placing a wafer, coupled to a lower stage. The upper stage includes a lower surface that includes a cooling liquid circulation groove, and an upper surface that includes a cooling gas distribution groove and a cooling gas outlet hole. The lower stage includes a cooling liquid inlet, a cooling liquid outlet and a cooling gas inlet hole, the cooling liquid inlet and the cooling liquid outlet both being communicated with the cooling liquid circulation groove. To cool a lower electrode, cooling liquid enters the cooling liquid circulation groove from the cooling liquid inlet, and then flows out the cooling liquid outlet. To cool a wafer on the upper stage, cooling gas enters from the cooling gas inlet hole, passes through the cooling gas outlet hole, and diffuses into the cooling gas distribution groove.