Patents by Inventor Dongming Mei

Dongming Mei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240106547
    Abstract: A device interconnection method includes: in response to an operation of starting up a screen mirroring application program, starting up the screen mirroring application program, where the screen mirroring application program includes a screen mirroring identifier used in this screen mirroring; generating an audio file carrying the screen mirroring identifier; and playing the audio file at least once to generate an acoustic wave signal, such that a screen mirroring application program in a terminal device collects the acoustic wave signal, and establishes a screen mirroring link with the vehicular device based on the screen mirroring identifier in the acoustic wave signal.
    Type: Application
    Filed: September 11, 2023
    Publication date: March 28, 2024
    Applicant: Beijing Xiaomi Mobile Software Co., Ltd.
    Inventors: Shaoqing MEI, Yu WANG, Dongming SUN
  • Patent number: 10125431
    Abstract: In accordance with the present invention, taught is a high purity germanium crystal growth method utilizing a quartz shield inside a steel furnace. The quartz shield is adapted for not only guiding the flow of an inert gas but also preventing the germanium melt from contamination by insulation materials, graphite crucible, induction coil and stainless steel chamber. A load cell provides automatic control of crystal diameter and helps to ensure exhaustion of the germanium melt. The method is both convenient and effective at producing high purity germanium crystals by relatively low skilled operators.
    Type: Grant
    Filed: June 20, 2014
    Date of Patent: November 13, 2018
    Assignee: South Dakota Board of Regents
    Inventors: Guojian Wang, Dongming Mei
  • Publication number: 20160153117
    Abstract: In accordance with the present invention, taught is a high purity germanium crystal growth method utilizing a quartz shield inside a steel furnace. The quartz shield is adapted for not only guiding the flow of an inert gas but also preventing the germanium melt from contamination by insulation materials, graphite crucible, induction coil and stainless steel chamber. A load cell provides automatic control of crystal diameter and helps to ensure exhaustion of the germanium melt. The method is both convenient and effective at producing high purity germanium crystals by relatively low skilled operators.
    Type: Application
    Filed: June 20, 2014
    Publication date: June 2, 2016
    Applicant: South Dakota Board of Regents
    Inventors: Guojian Wang, Dongming Mei