Abstract: The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.

Abstract: The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.

Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

Abstract: Wetted thin diamond films which are drapable are described. The films are mounted on various substrates and used as windows for electromagnetic radiation or form a surface coating on an article of manufacture.

Abstract: A method for selective controlled etching of a material particularly by sequentially switching between two (2) or more modes of radiofrequency waves and/or by distance from a source of the microwaves. The modes and/or distance are selected depending upon the surface of the material to be etched. The etching is rapidly conducted at 0.5 mtorr to 10 torr, preferably using microwave plasma etching.

Abstract: A process for depositing an adherent polycrystalline diamond thin film on a glass substrate, by chemical vapor deposition (CVD) at 1 to 15 torr and low temperatures of the substrate of between about 350 to 600.degree. C. using hydrogen and methane and optionally carbon dioxide. The substrate has diamond particles deposited on it or is polished with diamond particles prior to CVD. The process produces films which are clear and adherent.

Abstract: A plasma (56, 333) generating apparatus (10, 320, 450) wherein a stage (250, 300, 300A, 350, 400, 425) is constructed to keep the plasma on the substrate (S). A pair of electrically, non-conductive tubes (252, 252A, 303, 305, 303A, 305A 403, 405) are mounted on a conductive base plate (253,306,406) having holes (255, 306B) for gas flow and one of the tubes supports a conductive support plate (251, 301, 351, 401) for a substrate (S). An electrically conductive disk (304, 404) between the tubes is provided. An outer conductive tube (307, 418) is preferably used with larger diameter chambers. The stage is designed to prevent the plasma from falling below conductive support plate which preferably mounts a graphite insert (302, 352, 402) which supports the substrate.

Abstract: A method for ablating a synthetic diamond having a pitted surface includes applying a colloidal graphite to the surface of the diamond and subjecting it to an oxygen plasma so that preferably approximately 50 microns are removed from the surface of the synthetic diamond. The resulting surface of the diamond is virtually pit free. Preferably, the diamond is then mechanically lapped for finishing.

Abstract: An apparatus and method for treating a substrate with an excited species removed from a plasma (15, 15a, 31, 52, 53) is described. The apparatus includes closed or open end tubes (13, 22, 30, 54 and 55) with apparatus or nozzles (16, 32, 56 and 57) for directing the excited species at a substrate (17, 33, 59) and a tunable plate or sliding short (11, 38, 39, 40) internal or external of the tubes for positioning the plasma in the tube during operation of the apparatus. Tuning or nozzle position or power variations are used. The method and apparatus is useful for depositing films, etching and the like.

Abstract: An improved ion generating apparatus for producing a plasma disk using magnets 34 and 35 around a region 16 in a chamber 15 positioned in a microwave cavity is described. The apparatus is particularly operated at a microwave frequency such that electron cyclotron resonance is produced in the plasma to create an accelerating surface for the electrons around and inside of the plasma. The apparatus can be operated to treat an article 100 in the plasma or a holder 39, with a grid 51 to withdraw particles or with a magnets 47 around an opening 48 forming a nozzle which with electron cyclotron resonance produces a neutral beam of charged particles. The apparatus is particularly useful as a plasma source especially for oxidation, etching and deposition.

Abstract: A plasma apparatus which generates a radio frequency (UHF or microwave) disk plasma 16 and a hybrid plasma 45 derived from the disk plasma. The microwave plasma acts as a source of excited ion and free radical species and electrons for the second plasma which is hybrid in that it contains species from both microwave and dc (or rf depending on bias) excitation. The hybrid plasma can be used to treat an article 43 with different species than are present in the disk plasma and provides more control in this regard than a single plasma.

Abstract: A method for etching or chemically treating a surface of an article utilizing a radio frequency wave ion generating apparatus which provides a thin disk shaped plasma is described. The plasma disks can have a relatively large diameter (on the order of magnitude 50 centimeters). The plasma disks can be created without using a static magnetic field. The radio frequency waves are preferably microwaves or UHF. The method is particularly useful for ion or free radical irradiation of the surface provided in the plasma or for irradiation of the surface by ions accelerated outside a cavity containing the plasma. Disk plasmas are created over a wide pressure range (10.sup.-4 Torr to 1 atmosphere) and are highly ionized at low pressures. An apparatus adapted for treating a surface of an article with ions from a plasma is also described. The method and apparatus are preferably used for treating a surface forming part of an integrated circuit.

Abstract: A method for etching or chemically treating a surface of an article utilizing a radio frequency wave ion generating apparatus which provides a thin disk shaped plasma is described. The plasma disks can have a relatively large diameter (on the order of magnitude 50 centimeters). The plasma disks can be created without using a static magnetic field. The radio frequency waves are preferably microwaves or UHF. The method is particularly useful for ion or free radical irradiation of the surface provided in the plasma or for irradiation of the surface by ions accelerated outside a cavity containing the plasma. Disk plasmas are created over a wide pressure range (10.sup.-4 Torr to 1 atmosphere) and are highly ionized at low pressures. An apparatus adapted for treating a surface of an article with ions from a plasma is also described. The method and apparatus are preferably used for treating a surface forming part of an integrated circuit.