Abstract: Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

Abstract: Provided are organic-inorganic hybrid polyamic ester, method of fabricating the same, and method of fabricating a film thereof. The polyamic ester is formed by chemically reacting an inorganic precursor containing inorganic and/or metal element with a polyamic acid having two carboxyl acid of good reactivity per a polymer repeating unit. The inorganic alkoxide is hydrolyzed to be the corresponding inorganic hydroxide. The hydroxyl group is reacted with the carboxylic acid of the polyamic acid and with the hydroxyl group of the other inorganic hydroxide. Therefore, the polyamic ester can steadily include more inorganic materials. The content amount of the inorganic material is relatively high, so that the polyamic ester may have superior refractive index, chemical and heat resistances.

Abstract: Provided is a method of fabricating an organic light emitting diode. The method may include preparing a substrate, forming a textured portion on the substrate, the textured portion including protruding patterns randomly and irregularly arranged on the substrate, forming a planarization layer on the substrate to planarize the substrate formed with the textured portion, forming a first electrode on the planarization layer, forming an organic light emitting layer on the first electrode, and forming a second electrode on the organic light emitting layer.

Abstract: Provided are an organic-light-emitting-diode (OLED) flat-panel light-source apparatus and a method of manufacturing the same. The device includes an anode and a cathode, to which externally applied power is supplied, disposed on a substrate, an organic emission layer (EML) interposed between the anode and the cathode and configured to emit light due to power supplied through the anode and the cathode, and a subsidiary electrode layer including a plurality of subsidiary electrodes bonded to the anode or the cathode and configured to supply power to the anode or the cathode or electrically insulated from the anode or the cathode and configured to supply power to other emission regions.

Abstract: A method of fabricating an organic light emitting diode using phase separation. The method includes preparing a transparent substrate. A first light path control layer is formed on the transparent substrate. The first light path control layer includes a mixture of a first medium and a second medium having a lower refractive index than the first medium using the phase separation. An anode, an organic emission layer, and a cathode are sequentially stacked on the first light path control layer. In this method, an OLED with improved light extraction efficiency can be fabricated using a simple and inexpensive process.

Abstract: The inventive concept provides organic light emitting diodes and methods of manufacturing an organic light emitting diode. The organic light emitting diode includes a substrate, a first electrode layer and a second electrode layer formed on the substrate, an organic light emitting layer disposed between the first electrode layer and the second electrode layer and generating light, and a scattering layer between the first electrode layer and the substrate or between the first electrode layer and the organic light emitting layer. The scattering layer scatters the light.

Abstract: The inventive concept provides an organic light emitting diode that can change its color. A color change is embodied by a micro cavity effect caused by a metal thin film partly formed on a positive pole. The organic light emitting diode includes a positive pole, an organic luminous layer and a negative pole that can be sequentially stacked on a substrate, and further include a metal thin film layer having first strip lines extending in a first direction and being arranged in a second direction crossing the first direction on the positive pole.

Abstract: Organic light emitting devices are provided. The organic light emitting device may include a substrate having a first refractive index, a first electrode on the substrate, a second electrode disposed between the substrate and the first electrode and having a thickness equal to or greater than one-hundredth of a minimum wavelength of visible light and equal to or smaller than five-hundredths of a maximum wavelength of the visible light, and an organic light emitting layer disposed between the first and second electrodes and having a second refractive index.

Abstract: The inventive concept provides light emitting devices and methods of manufacturing a light emitting device. The light emitting device may include a transparent substrate including a first region and a second region, a first transparent electrode disposed on a first surface of the transparent substrate, a second transparent electrode facing and spaced apart from the first transparent electrode, an organic light emitting layer disposed between the first and second transparent electrodes, an assistant electrode disposed between the first and second transparent electrodes and selectively masking the second region, and a light path changing structure disposed on a second surface of the transparent substrate and selectively masking the second region.

Abstract: Provided is an organic electroluminescence device. The organic electroluminescence device includes: a first device including a first substrate, a first electrode, a first organic light emitting layer and a second electrode, the first electrode, the first organic light emitting layer and the second electrode being sequentially stacked on the first substrate; a second device facing the first device and including a second substrate, a third electrode, a second organic light emitting layer and a fourth electrode, the third electrode, the second organic light emitting layer and the fourth electrode being sequentially stacked on the second substrate; and a bonding layer bonding the first device with the second device, wherein one of lights emitted from the first and second organic light emitting layers resonates in one of the first device or the second device.

Abstract: Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

Abstract: Provided is an organic light emitting diode (OLED) panel for lighting, including an organic layer emitting light by reaction in response to power supplied by a positive electrode and a negative electrode, a protection cap protecting the organic layer from external moisture and oxygen, a cover film attached to upper surfaces of the positive electrode and negative electrode, and serving as a ground for the positive electrode and the negative electrode, and a conductive metal layer grounding the positive electrode and the negative electrode to the cover film.

Abstract: A method of fabricating an organic light emitting diode using phase separation. The method includes preparing a transparent substrate. A first light path control layer is formed on the transparent substrate. The first light path control layer includes a mixture of a first medium and a second medium having a lower refractive index than the first medium using the phase separation. An anode, an organic emission layer, and a cathode are sequentially stacked on the first light path control layer. In this method, an OLED with improved light extraction efficiency can be fabricated using a simple and inexpensive process.

Abstract: Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

Abstract: Provided is an organic electroluminescence device. The organic electroluminescence device includes: a first device including a first substrate, a first electrode, a first organic light emitting layer and a second electrode, the first electrode, the first organic light emitting layer and the second electrode being sequentially stacked on the first substrate; a second device facing the first device and including a second substrate, a third electrode, a second organic light emitting layer and a fourth electrode, the third electrode, the second organic light emitting layer and the fourth electrode being sequentially stacked on the second substrate; and a bonding layer bonding the first device with the second device, wherein one of lights emitted from the first and second organic light emitting layers resonates in one of the first device or the second device.

Abstract: Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching functions of a diode. The TFT according to the present invention includes, a substrate, a gate electrode formed on a portion of the substrate, an insulating layer covering the substrate and a gate electrode, a plurality of CIS (CuInSe2) films formed on the insulating layer so as to cover the region where the gate electrode is formed; and source/drain regions separated from each other so as to comprise a trench exposing a portion of a surface of the CIS films.

Abstract: Provided is an organic light emitting diode (OLED) panel for lighting, including an organic layer emitting light by reaction in response to power supplied by a positive electrode and a negative electrode, a protection cap protecting the organic layer from external moisture and oxygen, a cover film attached to upper surfaces of the positive electrode and negative electrode, and serving as a ground for the positive electrode and the negative electrode, and a conductive metal layer grounding the positive electrode and the negative electrode to the cover film.

Abstract: Provided are an organic-light-emitting-diode (OLED) flat-panel light-source apparatus and a method of manufacturing the same. The device includes an anode and a cathode, to which externally applied power is supplied, disposed on a substrate, an organic emission layer (EML) interposed between the anode and the cathode and configured to emit light due to power supplied through the anode and the cathode, and a subsidiary electrode layer including a plurality of subsidiary electrodes bonded to the anode or the cathode and configured to supply power to the anode or the cathode or electrically insulated from the anode or the cathode and configured to supply power to other emission regions.

Abstract: Provided is a composition for an oxide semiconductor thin film and a field effect transistor (FET) using the composition. The composition includes from about 50 to about 99 mol % of a zinc oxide (ZnO); from about 0.5 to 49.5 mol % of a tin oxide (SnOx); and remaining molar percentage of an aluminum oxide (AlOx). The thin film formed of the composition remains in amorphous phase at a temperature of 400° C. or less. The FET includes an active layer formed of the composition and has improved electrical characteristics. The FET can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga.

Abstract: Provided are an organic light emitting diode (OLED) using phase separation and a method of fabricating the same. The method includes preparing a transparent substrate. A first light path control layer is formed on the transparent substrate. The first light path control layer includes a mixture of a first medium and a second medium having a lower refractive index than the first medium using the phase separation. An anode, an organic emission layer, and a cathode are sequentially stacked on the first light path control layer. In this method, an OLED with improved light extraction efficiency can be fabricated using a simple and inexpensive process.