Patents by Inventor Doo Hyung Kang

Doo Hyung Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9484924
    Abstract: A negative capacitance logic device includes a first field effect transistor (FET) and a second FET. The first FET is coupled between a power supply voltage and an output node, and the first FET includes a ferroelectric having a negative capacitance. The second FET is coupled between the output node and a ground voltage, and the second FET includes a ferroelectric having a negative capacitance. The negative capacitance logic differentiates an input voltage applied to an input node to provide an output voltage at the output node.
    Type: Grant
    Filed: February 5, 2015
    Date of Patent: November 1, 2016
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Min Cheol Shin, Jae Hyun Lee, Doo Hyung Kang, Jun Beom Seo, Woo Jin Jeong
  • Publication number: 20160211849
    Abstract: A negative capacitance logic device includes a first field effect transistor (FET) and a second FET. The first FET is coupled between a power supply voltage and an output node, and the first FET includes a ferroelectric having a negative capacitance. The second FET is coupled between the output node and a ground voltage, and the second FET includes a ferroelectric having a negative capacitance. The negative capacitance logic differentiates an input voltage applied to an input node to provide an output voltage at the output node.
    Type: Application
    Filed: February 5, 2015
    Publication date: July 21, 2016
    Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Min Cheol Shin, Jae Hyun Lee, Doo Hyung Kang, Jun Beom Seo, Woo Jin Jeong
  • Patent number: 9369086
    Abstract: Example embodiments are related to a high power spin torque oscillator that is integrated by combining a transistor. The high power spin torque oscillator according to example embodiments may include a spin torque oscillator and a transistor. The spin torque oscillator may perform an oscillation function and a transistor may perform an amplification function by integrating the spin torque oscillator and a transistor in one chip. The transistor may amplify an amplification signal of the spin torque oscillator. The high power spin torque oscillator may be integrated on FET or BJT.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: June 14, 2016
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Min Cheol Shin, Doo Hyung Kang, Jae Hyun Lee
  • Publication number: 20160013754
    Abstract: Example embodiments are related to a high power spin torque oscillator that is integrated by combining a transistor. The high power spin torque oscillator according to example embodiments may include a spin torque oscillator and a transistor. The spin torque oscillator may perform an oscillation function and a transistor may perform an amplification function by integrating the spin torque oscillator and a transistor in one chip. The transistor may amplify an amplification signal of the spin torque oscillator. The high power spin torque oscillator may be integrated on FET or BJT.
    Type: Application
    Filed: November 26, 2014
    Publication date: January 14, 2016
    Inventors: Min Cheol Shin, Doo Hyung Kang, Jae Hyun Lee