Patents by Inventor Doo-Hyoung Lee
Doo-Hyoung Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230170441Abstract: Provided are a light emitting device and a display apparatus comprising the same. The light emitting device comprises a light emitting device core extending in one direction, and a transmission filter layer surrounding a part of the side surface of the light emitting device core, wherein the side surface of the light emitting device core comprises a first area having the transmission filter layer arranged therein, and a second area not having the transmission filter layer arranged therein.Type: ApplicationFiled: April 23, 2021Publication date: June 1, 2023Inventors: Mi Hyang SHEEN, Sang Hyung LIM, Myeong Kyu PARK, Na Ri AHN, Doo Hyoung LEE
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Patent number: 11621312Abstract: A display device includes a first conductive pattern on a substrate, a first insulating layer on the first conductive pattern, a semiconductor pattern on the first insulating layer, a second insulating layer on the first insulating layer and the semiconductor pattern, and a second conductive pattern on the second insulating layer. A first edge of the first conductive pattern faces a second edge of the second conductive pattern, the first conductive pattern does not overlap the second conductive pattern in an area where the first edge faces the second edge, the semiconductor pattern is in the area where the first edge faces the second edge, the second conductive pattern overlaps the second insulating layer, and the second insulating layer includes a third edge protruding from the second edge of the second conductive pattern.Type: GrantFiled: November 4, 2020Date of Patent: April 4, 2023Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Sang Hyung Lim, Jee Hoon Kim, Mi Hyang Sheen, Jin Ho Jang, Myeong Kyu Park, Na Ri Ahn, Hui Won Yang, Doo Hyoung Lee
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Publication number: 20210296422Abstract: A display device includes a first conductive pattern on a substrate, a first insulating layer on the first conductive pattern, a semiconductor pattern on the first insulating layer, a second insulating layer on the first insulating layer and the semiconductor pattern, and a second conductive pattern on the second insulating layer. A first edge of the first conductive pattern faces a second edge of the second conductive pattern, the first conductive pattern does not overlap the second conductive pattern in an area where the first edge faces the second edge, the semiconductor pattern is in the area where the first edge faces the second edge, the second conductive pattern overlaps the second insulating layer, and the second insulating layer includes a third edge protruding from the second edge of the second conductive pattern.Type: ApplicationFiled: November 4, 2020Publication date: September 23, 2021Applicant: Samsung Display Co., LTD.Inventors: Sang Hyung LIM, Jee Hoon KIM, Mi Hyang SHEEN, Jin Ho JANG, Myeong Kyu PARK, Na Ri AHN, Hui Won YANG, Doo Hyoung LEE
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Patent number: 10546959Abstract: A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.Type: GrantFiled: July 28, 2017Date of Patent: January 28, 2020Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Sung Wook Woo, Chang Ho Lee, Kyung Lae Rho, Doo Hyoung Lee, Sung Chan Jo, Sang Woo Sohn, Sang Won Shin, Soo Im Jeong, Chang Yong Jeong
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Publication number: 20180040739Abstract: A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.Type: ApplicationFiled: July 28, 2017Publication date: February 8, 2018Inventors: SUNG WOOK WOO, Chang Ho Lee, Kyung Lae Rho, Doo Hyoung Lee, Sung Chan Jo, Sang Woo Sohn, Sang Won Shin, Soo Im Jeong, Chang Yong Jeong
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Publication number: 20160300950Abstract: A thin film transistor array panel includes a gate line disposed on a substrate, the gate line including a gate electrode, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the substrate, the semiconductor layer including an oxide semiconductor, a data line disposed on the substrate and crossing the gate line, a data line layer including a source electrode connected to the data line and a drain electrode facing the source electrode, and a passivation layer covering the source electrode and the drain electrode. The data line layer includes copper or a copper alloy, and the semiconductor layer includes a copper doped oxide semiconductor. A content of copper doped on the oxide semiconductor is 0.2% to 0.82%.Type: ApplicationFiled: October 20, 2015Publication date: October 13, 2016Inventors: Hyeon Jun LEE, Ki Won Kim, Yoo Ho Kim, Joon Geol Kim, Doo Hyoung Lee
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Patent number: 9406785Abstract: A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode.Type: GrantFiled: October 22, 2014Date of Patent: August 2, 2016Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Doo Hyoung Lee, Bo Sung Kim, Chan Woo Yang, Seung-Ho Jung, Yeon Taek Jeong, June Whan Choi, Tae-Young Choi
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Patent number: 9136342Abstract: A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon.Type: GrantFiled: September 24, 2014Date of Patent: September 15, 2015Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Yeon Taek Jeong, Bo Sung Kim, Doo-Hyoung Lee, June Whan Choi, Tae-Young Choi, Kano Masataka
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Patent number: 9115287Abstract: According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.Type: GrantFiled: November 6, 2012Date of Patent: August 25, 2015Assignee: Samsung Display Co., Ltd.Inventors: Yeon-Taek Jeong, Bo-Sung Kim, Doo-Hyoung Lee, Doo-Na Kim, Eun-Hye Park, Dong-Lim Kim, Hyun-Jae Kim, You-Seung Rim, Hyun-Soo Lim
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Patent number: 9082795Abstract: A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio ( R , R ? [ mol ? ? % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio ( R , R ? [ mol ? ? % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.Type: GrantFiled: September 4, 2014Date of Patent: July 14, 2015Assignee: Samsung Display Co., Ltd.Inventors: Doo Hyoung Lee, Chan Woo Yang, Seung-Ho Jung, Doo Na Kim, Bo Sung Kim, Eun Hye Park, June Whan Choi
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Publication number: 20150044817Abstract: A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode.Type: ApplicationFiled: October 22, 2014Publication date: February 12, 2015Inventors: Doo Hyoung Lee, Bo Sung Kim, Chan Wood Yang, Seung-Ho Jung, Yeon Taek Jeong, June Whan Choi, Tae-Young Choi
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Publication number: 20150008437Abstract: A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon.Type: ApplicationFiled: September 24, 2014Publication date: January 8, 2015Inventors: Yeon Taek JEONG, Bo Sung KIM, Doo-Hyoung LEE, June Whan CHOI, Tae-Young CHOI, Kano MASATAKA
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Publication number: 20140377904Abstract: A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio ( R , R ? [ mol ? ? % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio ( R , R ? [ mol ? ? % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.Type: ApplicationFiled: September 4, 2014Publication date: December 25, 2014Inventors: DOO HYOUNG LEE, CHAN WOO YANG, SEUNG-HO JUNG, DOO NA KIM, BO SUNG KIM, EUN HYE PARK, JUNE WHAN CHOI
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Patent number: 8895977Abstract: A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode.Type: GrantFiled: November 9, 2012Date of Patent: November 25, 2014Assignee: Samsung Display Co., Ltd.Inventors: Doo Hyoung Lee, Bo Sung Kim, Chan Woo Yang, Seung-Ho Jung, Yeon Taek Jeong, June Whan Choi, Tae-Young Choi
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Patent number: 8871577Abstract: A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon.Type: GrantFiled: March 30, 2012Date of Patent: October 28, 2014Assignee: Samsung Display Co., Ltd.Inventors: Yeon Taek Jeong, Bo Sung Kim, Doo-Hyoung Lee, June Whan Choi, Tae-Young Choi, Kano Masataka
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Patent number: 8853687Abstract: A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio ( R , R ? [ mol ? ? % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio (R, ( R , R ? [ mol ? ? % ] = [ In ] [ In + Zn + Sn ] / 100 ) of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.Type: GrantFiled: November 16, 2012Date of Patent: October 7, 2014Assignee: Samsung Display Co., Ltd.Inventors: Doo Hyoung Lee, Chan Woo Yang, Seung-Ho Jung, Doo Na Kim, Bo Sung Kim, Eun Hye Park
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Patent number: 8753920Abstract: Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1. MAn ??(Formula 1) Herein, M is a metal ion, A is an organic ligand which includes ?-substituted carboxylate, and n is a natural number.Type: GrantFiled: August 1, 2011Date of Patent: June 17, 2014Assignee: Samsung Display Co., Ltd.Inventors: Bo Sung Kim, Doo-Hyoung Lee, Yeon-Taek Jeong, Ki-Beom Lee, Young-Min Kim, Tae-Young Choi, Seon-Pil Jang, Kang-Moon Jo
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Publication number: 20130328042Abstract: A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio (R, R[mol %]=[In]/[In+Zn+Sn]/100) of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio (R, R[mol %]=[In]/[In+Zn+Sn]/100) of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.Type: ApplicationFiled: November 16, 2012Publication date: December 12, 2013Applicant: SAMSUNG DISPLAY CO., LTD.Inventors: Doo Hyoung LEE, Chan Woo YANG, Seung-Ho JUNG, Doo Na KIM, Bo Sung KIM, Eun Hye PARK, June Whan CHOI
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Publication number: 20130320327Abstract: A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode.Type: ApplicationFiled: November 9, 2012Publication date: December 5, 2013Applicant: Samsung Display Co., Ltd.Inventors: Doo Hyoung LEE, Bo Sung Kim, Chan Woo Yang, Seung-Ho Jung, Yeon Taek Jeong, June Whan Choi, Tae-Young Choi
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Publication number: 20130237011Abstract: A method of manufacturing a thin-film transistor substrate includes: applying a composition on a substrate to form a thin-film on the substrate, heating the thin-film, and patterning the thin-film to form an oxide semiconductor pattern. The composition includes a metal nitrate and water. The potential of hydrogen (pH) of the composition is about 1 to about 4.Type: ApplicationFiled: November 16, 2012Publication date: September 12, 2013Applicants: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, SAMSUNG DISPLAY CO., LTD.Inventors: Yeon-Taek JEONG, Bo-Sung KIM, Doo-Hyoung LEE, Seung-Ho JUNG, Tae-Young CHOI, Doo-Na KIM, Byeong-Soo BAE, Chan-Woo YANG, Byung-Ju LEE, Kang-Moon JO, Young-Hwan HWANG, Jun-Hyuck JEON