Abstract: A process of forming an electrode interconnection between at least two adjacent unit devices in an integrated multilayer thin-film electronic device comprising: providing an intermediary device that comprises: a first electrode layer on a thin film substrate comprising a first patterned coating that includes at least two spaced apart first electrode sections of adjacent unit devices; a first functional layer comprising a substantially continuous coating over the first electrode layer; and a second functional layer comprising a second patterned coating on the first functional layer comprising at least two spaced apart functional sections, each functional section positioned on the first functional layer to overlay a portion of one of the first electrode sections so to define a gap portion between adjacent functional sections that includes a portion of that first electrode section and the first functional layer; and applying a second electrode layer over the second functional layer as a third patterned coating t

Abstract: The invention is directed to a photovoltaic apparatus comprising a carrier substrate. The carrier substrate carries printed structures comprising: a plurality of photovoltaic modules, each module including first and second terminals and a plurality of photovoltaic cells electrically connected between the first and second module terminals; a first bus bar extending along one side of the photovoltaic modules; a second bus bar extending along an opposite side of the photovoltaic modules; and a plurality of intermodule rails, each inter-module rail being associated with a photovoltaic module.

Abstract: The invention provides a method of forming a perovskite film for an optoelectronic device, the method comprising: applying a perovskite precursor solution to at least one part of a hydrophilic region of a substrate, wherein the hydrophilic region is bounded by a hydrophobic boundary; allowing the perovskite precursor solution to spread over the hydrophilic region, wherein the perovskite precursor solution is retained within the hydrophilic region by at least a portion of the hydrophobic boundary; and drying the perovskite precursor solution to form a perovskite film on the hydrophilic region.

Abstract: The invention is directed to a photovoltaic apparatus comprising a carrier substrate. The carrier substrate carries printed structures comprising: a plurality of photovoltaic modules, each module including first and second terminals and a plurality of photovoltaic cells electrically connected between the first and second module terminals; a first bus bar extending along one side of the photovoltaic modules; a second bus bar extending along an opposite side of the photovoltaic modules; and a plurality of intermodule rails, each inter-module rail being associated with a photovoltaic module.

Abstract: A process of forming a photoactive layer of a planar perovskite photoactive device comprising: applying at least one layer of a first precursor solution to a substrate to form a first precursor coating on at least one surface of the substrate, the first precursor solution comprising MX2 and AX dissolved in a first coating solvent, wherein the molar ratio of MX2:AX=1:n with 0<n<1; and applying a second precursor solution to the first precursor coating to convert the first precursor coating to a perovskite layer AMX3, the second precursor solution comprising AX dissolved in a second coating solvent, the first precursor solution reacting with the second precursor solution to form a perovskite layer AMX3 on the substrate, wherein A comprises an ammonium group or other nitrogen containing organic cation, M is selected from Pb, Sn, Ge, Ca, Sr, Cd, Cu, Ni, Mn, Co, Zn, Fe, Mg, Ba, Si, Ti, Bi, or In, X is selected from at least one of F, Cl, Br or I.

Abstract: A process of forming a thin film photoactive layer of a perovskite photoactive device comprising: applying at least one coating of a perovskite precursor solution and a polymer additive to a substrate, wherein the at least one perovskite precursor solution comprises at least one reaction constituent for forming at least one perovskite compound having the formula AMX3 dissolved in a coating solvent selected from at least one polar aprotic solvent, the polymer additive being soluble in said coating solvent, and in which A comprises an ammonium group or other nitrogen containing organic cation, M is selected from Pb, Sn, Ge, Ca, Sr, Cd, Cu, Ni, Mn, Co, Zn, Fe, Mg, Ba, Si, Ti, Bi, or In, and X is selected from at least one of F, Cl, Br or I.

Abstract: A process of forming a photoactive layer of a planar perovskite photoactive device comprising: applying at least one layer of a first precursor solution to a substrate to form a first precursor coating on at least one surface of the substrate, the first precursor solution comprising MX2 and AX dissolved in a first coating solvent, wherein the molar ratio of MX2:AX=1:n with 0<n<1; and applying a second precursor solution to the first precursor coating to convert the first precursor coating to a perovskite layer AMX3, the second precursor solution comprising AX dissolved in a second coating solvent, the first precursor solution reacting with the second precursor solution to form a perovskite layer AMX3 on the substrate, wherein A comprises an ammonium group or other nitrogen containing organic cation, M is selected from Pb, Sn, Ge, Ca, Sr, Cd, Cu, Ni, Mn, Co, Zn, Fe, Mg, Ba, Si, Ti, Bi, or In, X is selected from at least one of F, Cl, Br or I.

Abstract: A process of forming a thin film photoactive layer of a perovskite photoactive device comprising: applying at least one coating of a perovskite precursor solution and a polymer additive to a substrate, wherein the at least one perovskite precursor solution comprises at least one reaction constituent for forming at least one perovskite compound having the formula AMX3 dissolved in a coating solvent selected from at least one polar aprotic solvent, the polymer additive being soluble in said coating solvent, and in which A comprises an ammonium group or other nitrogen containing organic cation, M is selected from Pb, Sn, Ge, Ca, Sr, Cd, Cu, Ni, Mn, Co, Zn, Fe, Mg, Ba, Si, Ti, Bi, or In, and X is selected from at least one of F, Cl, Br or I.