Patents by Inventor Doreen Wei Ying Yong
Doreen Wei Ying Yong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230382933Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: ApplicationFiled: August 10, 2023Publication date: November 30, 2023Applicant: Applied Materials, Inc.Inventors: Chandan Kr Barik, John Sudijono, Chandan Das, Doreen Wei Ying Yong, Mark Saly, Bhaskar Jyoti Bhuyan, Feng Q. Liu
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Patent number: 11760768Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: GrantFiled: April 21, 2021Date of Patent: September 19, 2023Assignee: Applied Materials, Inc.Inventors: Chandan Kr Barik, John Sudijono, Chandan Das, Doreen Wei Ying Yong, Mark Saly, Bhaskar Jyoti Bhuyan, Feng Q. Liu
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Publication number: 20230151038Abstract: Molybdenum(0) coordination complexes comprising an arene ligand and one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: ApplicationFiled: January 16, 2023Publication date: May 18, 2023Applicants: Applied Materials, Inc., National University of SingaporeInventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
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Publication number: 20230142926Abstract: Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.Type: ApplicationFiled: January 12, 2023Publication date: May 11, 2023Applicant: Applied Materials, Inc.Inventors: Yong Wang, Doreen Wei Ying Yong, Bhaskar Jyoti Bhuyan, John Sudijono
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Publication number: 20230129073Abstract: Molybdenum(0) coordination complexes comprising at least one cycloheptatriene ligand and optionally one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: ApplicationFiled: December 20, 2022Publication date: April 27, 2023Applicants: Applied Materials, Inc., National University of SingaporeInventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
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Patent number: 11621161Abstract: Methods of selectively depositing films on substrates are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Also described is exposing a substrate surface comprising a metal surface and a dielectric surface to a docking precursor to form a passivation film.Type: GrantFiled: October 27, 2020Date of Patent: April 4, 2023Assignee: Applied Materials, Inc.Inventors: Yong Wang, Andrea Leoncini, Doreen Wei Ying Yong, Bhaskar Jyoti Bhuyan, John Sudijono
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Patent number: 11584768Abstract: Molybdenum(0) coordination complexes comprising an arene ligand and one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: GrantFiled: January 12, 2021Date of Patent: February 21, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
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Patent number: 11569088Abstract: Methods of enhancing selective deposition are described. In some embodiments, a passivation layer is deposited on a metal surface before deposition of a dielectric material. A block I molecule is deposited on a metal surface, and a block II molecule is reacted with the block I molecule to form a passivation layer.Type: GrantFiled: October 27, 2020Date of Patent: January 31, 2023Assignee: Applied Materials, Inc.Inventors: Yong Wang, Andrea Leoncini, Doreen Wei Ying Yong, John Sudijono
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Publication number: 20220406595Abstract: Novel cyclic silicon precursors and oxidants are described. Methods for depositing silicon-containing films on a substrate are described. The substrate is exposed to a silicon precursor and a reactant to form the silicon-containing film (e.g., elemental silicon, silicon oxide, silicon nitride). The exposures can be sequential or simultaneous.Type: ApplicationFiled: June 22, 2021Publication date: December 22, 2022Applicants: Applied Materials, Inc., National University of SingaporeInventors: Chandan Kr Barik, Doreen Wei Ying Yong, John Sudijono, Cong Trinh, Bhaskar Jyoti Bhuyan, Michael Haverty, Muthukumar Kaliappan, Yingqian Chen, Anil Kumar Tummanapelli, Richard Ming Wah Wong
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Patent number: 11530477Abstract: Molybdenum(0) coordination complexes comprising at least one cycloheptatriene ligand and optionally one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: GrantFiled: January 12, 2021Date of Patent: December 20, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
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Patent number: 11515154Abstract: Selective deposition methods are described. An exemplary method comprises exposing the substrate comprising a first surface and a second surface to an anchor reactant and selectively depositing the anchor reactant on the first surface as a seed layer, wherein the anchor reactant comprises an ethynyl derivative with a headgroup that selectively targets the first surface.Type: GrantFiled: October 27, 2020Date of Patent: November 29, 2022Assignee: Applied Materials, Inc.Inventors: Andrea Leoncini, Yong Wang, Doreen Wei Ying Yong
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Publication number: 20220356197Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: ApplicationFiled: April 21, 2021Publication date: November 10, 2022Applicant: Applied Materials, Inc.Inventors: Chandan Kr Barik, John Sudijono, Chandan Das, Doreen Wei Ying Yong, Mark Saly, Bhaskar Jyoti Bhuyan, Feng Q. Liu
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Patent number: 11459347Abstract: Molybdenum(IV) and molybdenum(III) coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: GrantFiled: January 12, 2021Date of Patent: October 4, 2022Assignee: Applied Materials, Inc.Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
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Publication number: 20220306662Abstract: Molybdenum(IV) and molybdenum(III) coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: ApplicationFiled: June 16, 2022Publication date: September 29, 2022Applicants: Applied Materials, Inc., National University of SingaporeInventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
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Patent number: 11434254Abstract: Dinuclear molybdenum coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a dinuclear molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: GrantFiled: January 12, 2021Date of Patent: September 6, 2022Assignee: Applied Materials, Inc.Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
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Publication number: 20220275012Abstract: Dinuclear molybdenum coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a dinuclear molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: ApplicationFiled: May 18, 2022Publication date: September 1, 2022Applicants: Applied Materials, Inc., National University of SingaporeInventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
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Patent number: 11390638Abstract: Molybdenum(VI) coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: GrantFiled: January 12, 2021Date of Patent: July 19, 2022Assignee: Applied Materials, Inc.Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong, Mark Saly, Bhaskar Jyoti Bhuyan, Feng Q. Liu
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Publication number: 20220220140Abstract: Molybdenum(0) coordination complexes comprising an arene ligand and one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: ApplicationFiled: January 12, 2021Publication date: July 14, 2022Applicants: Applied Materials, Inc., National University of SingaporeInventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
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Publication number: 20220220139Abstract: Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: ApplicationFiled: January 12, 2021Publication date: July 14, 2022Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong, Mark Saly, Bhaskar Jyoti Bhuyan
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Publication number: 20220220138Abstract: Molybdenum(IV) and molybdenum(III) coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: ApplicationFiled: January 12, 2021Publication date: July 14, 2022Applicants: Applied Materials, Inc., National University of SingaporeInventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong