Patents by Inventor Dorel I. Toma
Dorel I. Toma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10068765Abstract: A multi-step system and method for curing a dielectric film in which the system includes a drying system configured to reduce the amount of contaminants, such as moisture, in the dielectric film. The system further includes a curing system coupled to the drying system, and configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film.Type: GrantFiled: July 7, 2016Date of Patent: September 4, 2018Assignee: Tokyo Electron LimitedInventors: Junjun Liu, Eric M. Lee, Dorel I. Toma
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Publication number: 20160314966Abstract: A multi-step system and method for curing a dielectric film in which the system includes a drying system configured to reduce the amount of contaminants, such as moisture, in the dielectric film. The system further includes a curing system coupled to the drying system, and configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film.Type: ApplicationFiled: July 7, 2016Publication date: October 27, 2016Applicant: Tokyo Electron LimitedInventors: Junjun LIU, Eric M. LEE, Dorel I. TOMA
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Patent number: 9443725Abstract: A multi-step system and method for curing a dielectric film in which the system includes a drying system configured to reduce the amount of contaminants, such as moisture, in the dielectric film. The system further includes a curing system coupled to the drying system, and configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film.Type: GrantFiled: October 7, 2015Date of Patent: September 13, 2016Assignee: Tokyo Electron LimitedInventors: Junjun Liu, Eric M. Lee, Dorel I. Toma
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Patent number: 9017933Abstract: A method for treating a dielectric film on a substrate and, in particular, a method for integrating a low-k dielectric film with subsequently formed metal interconnects is described. The method includes preparing a dielectric film on a substrate, wherein the dielectric film is a low-k dielectric film having a dielectric constant less than or equal to a value of about 4. Thereafter, the method further includes performing a preliminary curing process on the dielectric film, forming a pattern in the dielectric film using a lithographic process and an etching process, removing undesired residues from the substrate, and performing a final curing process on the dielectric film, wherein the final curing process includes irradiating the substrate with ultraviolet (UV) radiation.Type: GrantFiled: March 25, 2011Date of Patent: April 28, 2015Assignee: Tokyo Electron LimitedInventors: Junjun Liu, Dorel I. Toma, Hongyu Yue
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Patent number: 8956457Abstract: A thermal processing system and method for curing a dielectric film. The thermal processing system is configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film. The thermal processing system can include an array if IR and UV light-emitting devices (LEDs) configured to irradiate a substrate having a low dielectric constant (low-k) film. The method dries the dielectric film to remove contaminants from the film and exposes the dielectric film at a single stage to ultraviolet radiation and IR radiation.Type: GrantFiled: September 8, 2006Date of Patent: February 17, 2015Assignee: Tokyo Electron LimitedInventors: Eric M. Lee, Junjun Liu, Dorel I. Toma
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Patent number: 8895942Abstract: A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.Type: GrantFiled: September 16, 2008Date of Patent: November 25, 2014Assignee: Tokyo Electron LimitedInventors: Junjun Liu, Jacques Faguet, Eric M. Lee, Dorel I. Toma, Hongyu Yue
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Patent number: 8444848Abstract: An apparatus for cutting a workpiece using electrochemical etching and a method of using thereof are described. The apparatus includes an electrochemical bath configured to contain an electrochemical solution, a support apparatus configured to support and immerse a workpiece in the electrochemical bath, and a non-contact cutting device configured to extend into the electrochemical bath and slice the workpiece via electrochemical etching along a cutting plane. The apparatus further includes an electromagnetic (EM) radiation source configured to illuminate a cutting surface formed between opposing sidewalls within an evolving cutting groove formed in the workpiece during slicing along the cutting plane.Type: GrantFiled: February 1, 2010Date of Patent: May 21, 2013Assignee: Tokyo Electron LimitedInventors: Hongyu H. Yue, Junjun Liu, Dorel I. Toma
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Patent number: 8242460Abstract: A process module for treating a dielectric film and, in particular, a process module for exposing, for example, a low dielectric constant (low-k) dielectric film to ultraviolet (UV) radiation is described. The process module includes a process chamber, a substrate holder coupled to the process chamber and configured to support a substrate, and a radiation source coupled to the process chamber and configured to expose the dielectric film to electromagnetic (EM) radiation. The radiation source includes a UV source, wherein the UV source has a UV lamp, and a reflector for directing reflected UV radiation from the UV lamp to the substrate. The reflector has a dichroic reflector, and a non-absorbing reflector disposed between the UV lamp and the substrate, and configured to reflect UV radiation from the UV lamp towards the dichroic reflector, wherein the non-absorbing reflector substantially prevents direct UV radiation from the UV lamp to the substrate.Type: GrantFiled: March 25, 2011Date of Patent: August 14, 2012Assignee: Tokyo Electron LimitedInventors: Hongyu Yue, Junjun Liu, Jacques Faguet, Dorel I. Toma
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Patent number: 8039049Abstract: A method and system for treating a dielectric film in a batch processing system includes exposing at least one surface of the dielectric film to a treating compound including a CxHy containing compound, where x and y represent integers greater than or equal to unity. The plurality of wafers are heated when the treating compound is introduced. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing.Type: GrantFiled: September 30, 2005Date of Patent: October 18, 2011Assignee: Tokyo Electron LimitedInventors: Eric M. Lee, Dorel I. Toma
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Publication number: 20110233430Abstract: A process module for treating a dielectric film and, in particular, a process module for exposing, for example, a low dielectric constant (low-k) dielectric film to ultraviolet (UV) radiation is described. The process module includes a process chamber, a substrate holder coupled to the process chamber and configured to support a substrate, and a radiation source coupled to the process chamber and configured to expose the dielectric film to electromagnetic (EM) radiation. The radiation source includes a UV source, wherein the UV source has a UV lamp, and a reflector for directing reflected UV radiation from the UV lamp to the substrate. The reflector has a dichroic reflector, and a non-absorbing reflector disposed between the UV lamp and the substrate, and configured to reflect UV radiation from the UV lamp towards the dichroic reflector, wherein the non-absorbing reflector substantially prevents direct UV radiation from the UV lamp to the substrate.Type: ApplicationFiled: March 25, 2011Publication date: September 29, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Hongyu YUE, Junjun LIU, Jacques FAGUET, Dorel I. TOMA
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Publication number: 20110232677Abstract: A method and system for treating a substrate and, in particular, a method and system for cleaning a low dielectric constant (low-k) dielectric film to remove, among other things, undesired residue is described. The method includes irradiating a region on a substrate containing one or more layers or structures with infrared (IR) radiation and optionally ultraviolet (UV) radiation to remove material or undesired residues from the one or more layers or structures. Furthermore, the method may optionally include exposing at least a portion of the region to a gas or vapor jet emanating from a gas nozzle along a jet axis in a direction towards the substrate.Type: ApplicationFiled: March 25, 2011Publication date: September 29, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Junjun LIU, Dorel I. TOMA, Hongyu YUE
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Publication number: 20110237080Abstract: A method for treating a dielectric film on a substrate and, in particular, a method for integrating a low-k dielectric film with subsequently formed metal interconnects is described. The method includes preparing a dielectric film on a substrate, wherein the dielectric film is a low-k dielectric film having a dielectric constant less than or equal to a value of about 4. Thereafter, the method further includes performing a preliminary curing process on the dielectric film, forming a pattern in the dielectric film using a lithographic process and an etching process, removing undesired residues from the substrate, and performing a final curing process on the dielectric film, wherein the final curing process includes irradiating the substrate with ultraviolet (UV) radiation.Type: ApplicationFiled: March 25, 2011Publication date: September 29, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Junjun LIU, Dorel I. TOMA, Hongyu YUE
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Publication number: 20110186443Abstract: An apparatus for cutting a workpiece using electrochemical etching and a method of using thereof are described. The apparatus includes an electrochemical bath configured to contain an electrochemical solution, a support apparatus configured to support and immerse a workpiece in the electrochemical bath, and a non-contact cutting device configured to extend into the electrochemical bath and slice the workpiece via electrochemical etching along a cutting plane. The apparatus further includes an electromagnetic (EM) radiation source configured to illuminate a cutting surface formed between opposing sidewalls within an evolving cutting groove formed in the workpiece during slicing along the cutting plane.Type: ApplicationFiled: February 1, 2010Publication date: August 4, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Hongyu H. YUE, Junjun LIU, Dorel I. TOMA
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Patent number: 7977256Abstract: A method of forming a porous low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and adjusting a residual amount of cross-linking inhibitor, such as pore-generating material, within the low-k dielectric film.Type: GrantFiled: March 6, 2008Date of Patent: July 12, 2011Assignee: Tokyo Electron LimitedInventors: Junjun Liu, Dorel I. Toma, Eric M. Lee
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Patent number: 7901743Abstract: A method and system for treating a dielectric film on a plurality of substrates includes disposing the plurality of substrates in a batch processing system, the dielectric film on the plurality of substrates having a dielectric constant value less than the dielectric constant of SiO2. The plurality of substrates are heated, and a treating compound comprising a CxHy containing compound, wherein x and y represent integers greater than or equal to unity is introduced to the process system. A plasma is formed and at least one surface of the dielectric film on said plurality of substrates is exposed to the plasma.Type: GrantFiled: September 30, 2005Date of Patent: March 8, 2011Assignee: Tokyo Electron LimitedInventors: Eric M. Lee, Dorel I. Toma
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Patent number: 7858533Abstract: A method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and ultraviolet (UV) radiation.Type: GrantFiled: March 6, 2008Date of Patent: December 28, 2010Assignee: Tokyo Electron LimitedInventors: Junjun Liu, Dorel I. Toma, Eric M. Lee
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Patent number: 7855123Abstract: A method for forming an air gap structure on a substrate is described. The method comprises depositing a sacrificial layer on a substrate, forming an adhesion-promoting layer between the sacrificial layer and the substrate, and depositing a capping layer over the sacrificial layer. The sacrificial layer and the capping layer are patterned and metalized. Thereafter, the sacrificial layer is decomposed and removed through the capping layer.Type: GrantFiled: March 31, 2009Date of Patent: December 21, 2010Assignee: Tokyo Electron LimitedInventors: Eric M. Lee, Junjun Liu, Dorel I. Toma
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Patent number: 7829268Abstract: A method of selectively removing a sacrificial material on a substrate is described. The method comprises forming a sacrificial layer on a substrate. Thereafter, the sacrificial layer is selectively decomposed at a temperature less than the temperature required to thermally decompose the sacrificial layer by selectively exposing the sacrificial layer to UV radiation.Type: GrantFiled: October 17, 2007Date of Patent: November 9, 2010Assignee: Tokyo Electron LimitedInventors: Junjun Liu, Dorel I. Toma
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Publication number: 20100248443Abstract: A method for forming an air gap structure on a substrate is described. The method comprises depositing a sacrificial layer on a substrate, forming an adhesion-promoting layer between the sacrificial layer and the substrate, and depositing a capping layer over the sacrificial layer. The sacrificial layer and the capping layer are patterned and metalized. Thereafter, the sacrificial layer is decomposed and removed through the capping layer.Type: ApplicationFiled: March 31, 2009Publication date: September 30, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Eric M. LEE, Junjun LIU, Dorel I. TOMA
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Publication number: 20100067886Abstract: A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.Type: ApplicationFiled: September 16, 2008Publication date: March 18, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Junjun Liu, Jacques Faguet, Eric M. Lee, Dorel I. Toma, Hongyu Yue