Patents by Inventor Dorian Gachon
Dorian Gachon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8829764Abstract: The invention relates to a resonator of the harmonic bulk acoustic resonator HBAR type, comprising a piezoelectric transducer (6) clamped between two electrodes (4, 8) with a strong electroacoustic coupling, cut according to a first cutting angle ?1, and an acoustic substrate (10) with a working frequency acoustic quality coefficient at least equal to 5·1012, cut according to a second cutting angle ?2 with at least one shearing vibration mode. The transducer and the substrate are arranged in such a way that the polarization direction of the shearing mode of the transducer and the polarization direction of the shearing of the substrate are aligned, and the second cutting angle ?2 is such that the temperature coefficient of the frequency of the first order CTFB1 corresponding to the shearing mode and to the second cutting angle ?2 is zero with inversion of the sign thereof on either side of, or equal to, a bias.Type: GrantFiled: May 29, 2009Date of Patent: September 9, 2014Assignees: Universite de Franche Comte, Centre National de la Recherche Scientifique (C.N.R.S.)Inventors: Sylvain Ballandras, Dorian Gachon
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Patent number: 8810106Abstract: The invention relates to a resonator of the high bulk acoustic resonator HBAR type, for operating at a pre-determined working frequency, comprising: a piezoelectric transducer (6), an acoustic substrate (10), a counter-electrode (8) formed by a metal layer adhering to a first face of the transducer (6) and a face of the acoustic substrate (10), and an electrode (4) arranged on a second face of the transducer (6) facing away from the first face of the transducer (6) and the substrate (10).Type: GrantFiled: May 29, 2009Date of Patent: August 19, 2014Assignees: Centre National de la Recherche Scientifique (C.N.R.S.), Universite de Franche ComteInventors: Sylvain Ballandras, Dorian Gachon
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Patent number: 8729982Abstract: The elementary filter of the HBAR type includes two resonators (20, 22) of the HBAR type which are each formed by a transducer (8) and a substrate (12) which are coupled in a suitable manner by electroacoustic waves. The first resonator (20), the second resonator (22) and the coupling element (28) by way of evanescent waves include the same monobloc acoustic substrate (12) which is arranged facing and coupled to the piezoelectric transducer (8) by waves having the same longitudinal or transverse vibration mode through the same reference electrode (10).Type: GrantFiled: November 5, 2009Date of Patent: May 20, 2014Assignees: Centre National de la Recherche Scientifique (C.N.R.S.), Universite de Franche-ComteInventors: Dorian Gachon, Sylvain Ballandras
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Patent number: 8421559Abstract: The present invention relates to the field of acoustic wave devices, and particularly to that of transducers capable of operating at very high frequencies, from a few hundred MHz to several gigahertz, and its subject is more particularly an interface acoustic wave device including at least two substrates and a layer of ferroelectric material, the latter being contained between a first electrode and a second electrode and having first positive-polarization domains and second negative-polarization domains, the first and second domains being alternated, wherein the assembly constituted by the first electrode, the layer of ferroelectric material, and the second electrode is contained between a first substrate and a second substrate.Type: GrantFiled: September 17, 2009Date of Patent: April 16, 2013Assignees: Etat Francais Represente par le Delegue General pour l'Armement, Centre Nationale de Recherche Scientifique, Université de Franche ComteInventors: Roger Petit, Sylvain Ballandras, Emilie Courjon, Dorian Gachon
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Publication number: 20110279187Abstract: The invention relates to a resonator of the harmonic bulk acoustic resonator IIBAR type, comprising a piezoelectric transducer (6) clamped between two electrodes (4, 8) with a strong electroacoustic coupling, cut according to a first cutting angle ?1, and an acoustic substrate (10) with a working frequency acoustic quality coefficient at least equal to 5.1012, cut according to a second cutting angle ?2 with at least one shearing vibration mode. The transducer and the substrate are arranged in such a way that the polarisation direction of the shearing mode of the transducer and the polarisation direction of the shearing of the substrate are aligned, and the second cutting angle ?2 is such that the temperature coefficient of the frequency of the first order CTFB1 corresponding to the shearing mode and to the second cutting angle ?2 is zero with inversion of the sign thereof on either side of, or equal to, a bias.Type: ApplicationFiled: May 29, 2009Publication date: November 17, 2011Applicant: Centre National De La Recherche Scientifique (C.N.R.S.)Inventors: Sylvain Ballandras, Dorian Gachon
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Publication number: 20110260811Abstract: The elementary filter of the HBAR type includes two resonators (20, 22) of the HBAR type which are each formed by a transducer (8) and a substrate (12) which are coupled in a suitable manner by electroacoustic waves. The first resonator (20), the second resonator (22) and the coupling element (28) by way of evanescent waves include the same monobloc acoustic substrate (12) which is arranged facing and coupled to the piezoelectric transducer (8) by waves having the same longitudinal or transverse vibration mode through the same reference electrode (10).Type: ApplicationFiled: November 5, 2009Publication date: October 27, 2011Applicants: Centre Natianl De La Recherche Scientifique (C.N.R.S), UNIVERSITE DE FRANCHE COMTEInventors: Dorian Gachon, Sylvain Ballandras
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Publication number: 20110210802Abstract: The invention relates to a resonator of the high bulk acoustic resonator HBAR type, for operating at a pre-determined working frequency, comprising: a piezoelectric transducer (6), an acoustic substrate (10), a counter-electrode (8) formed by a metal layer adhering to a first face of the transducer (6) and a face of the acoustic substrate (10), and an electrode (4) arranged on a second face of the transducer (6) facing away from the first face of the transducer (6) and the substrate (10).Type: ApplicationFiled: May 29, 2009Publication date: September 1, 2011Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S.)Inventors: Sylvain Ballandras, Dorian Gachon
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Publication number: 20110133857Abstract: The present invention relates to the field of acoustic wave devices, and particularly to that of transducers capable of operating at very high frequencies, from a few hundred MHz to several gigahertz, and its subject is more particularly an interface acoustic wave device including at least two substrates and a layer of ferroelectric material, the latter being contained between a first electrode and a second electrode and having first positive-polarization domains and second negative-polarization domains, the first and second domains being alternated, wherein the assembly constituted by the first electrode, the layer of ferroelectric material, and the second electrode is contained between a first substrate and a second substrate.Type: ApplicationFiled: September 17, 2009Publication date: June 9, 2011Applicants: ETAT FRANCAIS REPRESENTE PAR LE DELEGUE GENERAL POUR L'ARMEMENT, CENTRE NATIONALE DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITÉ DE FRANCHE COMTEInventors: Roger Petit, Sylvain Ballandras, Emilie Courjon, Dorian Gachon