Abstract: Exemplary semiconductor chamber component cleaning systems may include a receptacle. The receptacle may include a bottom lid that may be an annulus. The annulus may be characterized by an inner annular wall and an outer annular wall. A plurality of recessed annular ledges may be defined between the inner annular wall and the outer annular wall. Each recessed annular ledge of the plurality of recessed annular ledges may be formed at a different radial position along the bottom lid. The cleaning systems may include a top lid removably coupled with the bottom lid about an exterior region of the top lid. The cleaning systems may include a tank defining a volume to receive the receptacle.

Abstract: Exemplary semiconductor chamber component cleaning systems may include a receptacle. The receptacle may include a bottom lid that may be an annulus. The annulus may be characterized by an inner annular wall and an outer annular wall. A plurality of recessed annular ledges may be defined between the inner annular wall and the outer annular wall. Each recessed annular ledge of the plurality of recessed annular ledges may be formed at a different radial position along the bottom lid. The cleaning systems may include a top lid removably coupled with the bottom lid about an exterior region of the top lid. The cleaning systems may include a tank defining a volume to receive the receptacle.

Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The systems may include a leveling apparatus seated on the substrate support. The leveling apparatus may include a plurality of piezoelectric pressure sensors.

Abstract: Embodiments described herein relate to chamber component cleaning systems and methods for cleaning a chamber component. The chamber component cleaning system includes a spray station, at least a first cleaning station, a dry station, a component transfer mechanism, and one or more enclosures that enclose the spray station, at least the first cleaning station, the dry station, and the component transfer mechanism. The spray station has a holder to position a chamber component in a path of a flow of a cleaning spray and a movable nozzle to provide the flow of the cleaning spray at a first pressure in a path of portions of the chamber component. The first cleaning station has a push mechanism to force a cleaning fluid through features and/or holes of the chamber component and at least one movable transducer to provide ultrasonic energy to the portions of the chamber component.

Abstract: A disk for a hard disk drive is provided. The disk comprises a substrate comprising aluminum, and a coating layer disposed over the substrate. The coating layer comprises an alloy of Ni, X1 and X2, wherein X1 comprises one or more elements selected from the group consisting of Ag, Au, B, Cr, Cu, Ga, In, Mn, Mo, Nb, Pb, Sb, Se, Sn, Te, W, Zn and Zr, and wherein X2 comprises either B or P, and wherein X1 and X2 do not comprise the same elements.

Abstract: A method of manufacturing a disk for a magnetic storage device is provided. The method comprises electroless plating a coating layer over a substrate to produce the disk, the coating layer forming an exterior surface of coating over the substrate, and annealing the coating layer using a heating source, wherein heat radiating from the heating source is directionally focused onto the exterior surface before the exterior surface is polished.

Abstract: A disk for a hard disk drive is provided. The disk comprises a substrate comprising aluminum, and a coating layer disposed over the substrate. The coating layer comprises an alloy of Ni, X1 and X2, wherein X1 comprises one or more elements selected from the group consisting of Ag, Au, B, Cr, Cu, Ga, In, Mn, Mo, Nb, Pb, Sb, Se, Sn, Te, W, Zn and Zr, and wherein X2 comprises either B or P, and wherein X1 and X2 do not comprise the same elements.

Abstract: A disk for a hard disk drive is provided. The disk comprises a substrate comprising aluminum, and a coating layer disposed over the substrate. The coating layer comprises an alloy of Ni, X1 and X2, wherein X1 comprises one or more elements selected from the group consisting of Ag, Au, B, Cr, Cu, Ga, In, Mn, Mo, Nb, Pb, Sb, Se, Sn, Te, W, Zn and Zr, and wherein X2 comprises either B or P, and wherein X1 and X2 do not comprise the same elements.