Abstract: Provided are photoluminescence spectroscopy systems and methods for identifying and quantifying impurities in a semiconductor sample. In some embodiments, the systems and methods comprise a defocused collimated laser beam illuminating a first sample surface, and collection by a collection lens of photoluminescence from a sample edge at the intersection of the first surface with a substantially orthogonal second surface, wherein the first sample surface is oriented from about 0° to 90° with respect to a position parallel to the collection lens.

Abstract: Provided are photoluminescence spectroscopy systems and methods for identifying and quantifying impurities in a semiconductor sample. In some embodiments, the systems and methods comprise a defocused collimated laser beam illuminating a first sample surface, and collection by a collection lens of photoluminescence from a sample edge at the intersection of the first surface with a substantially orthogonal second surface, wherein the first sample surface is oriented from about 0° to 90° with respect to a position parallel to the collection lens.

Abstract: A method of analyzing carbon concentration in crystalline silicon includes providing a section from a zoned and annealed silicon core. The zoned and annealed core is extracted from a polycrystalline silicon composition and has a columnar shape. The zoned and annealed core includes a single crystalline silicon region and a freeze-out melt region. The freeze-out melt region is disposed adjacent to the single crystalline silicon region, and the regions are spaced along a length of the columnar shape. Specifically, the section is provided from the freeze-out melt region, with the entire freeze-out melt region in the section. A carbon concentration of the section is determined. By providing the section from the freeze-out melt region, as opposed to the polycrystalline silicon composition, determination of carbon concentration in the crystalline silicon is enabled with a sensitivity at less than or equal to 10 parts per billion atomic.

Abstract: A method of analyzing carbon concentration in crystalline silicon includes providing a section from a zoned and annealed silicon core. The zoned and annealed core is extracted from a polycrystalline silicon composition and has a columnar shape. The zoned and annealed core includes a single crystalline silicon region and a freeze-out melt region. The freeze-out melt region is disposed adjacent to the single crystalline silicon region, and the regions are spaced along a length of the columnar shape. Specifically, the section is provided from the freeze-out melt region, with the entire freeze-out melt region in the section. A carbon concentration of the section is determined. By providing the section from the freeze-out melt region, as opposed to the polycrystalline silicon composition, determination of carbon concentration in the crystalline silicon is enabled with a sensitivity at less than or equal to 10 parts per billion atomic.