Abstract: A pulsed power system and a pulsed power sputtering system are disclosed. The pulsed power system includes a first power source that is configured to apply a first voltage at a first power lead that alternates between positive and negative relative to a second power lead during each of multiple cycles. A second power source is coupled to a third power lead and the second power lead, and the second power source is configured to apply a second voltage to the third power lead that alternates between positive and negative relative to the second power lead during each of the multiple cycles. A controller is configured to control the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage, are simultaneously negative during a portion of each cycle and simultaneously positive relative to the second power lead during another portion of each cycle.

Abstract: A sputtering system and method are disclosed. The system includes a first power source that is configured to apply a first voltage at a first electrode that alternates between positive and negative relative to a second electrode during each of multiple cycles. A second power source is coupled to a third electrode and the second electrode, and the second power source is configured to apply a second voltage to the third electrode that alternates between positive and negative relative to the second electrode during each of the multiple cycles. A controller is configured to control the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage, are simultaneously negative during a portion of each cycle and simultaneously positive relative to the second electrode during another portion of each cycle.

Abstract: A sputtering system and method are disclosed. The system includes first power source coupled between a first and second power leads, and the first power source provides a first voltage that alternates between positive and negative during each of multiple cycles. The system also includes a second power source coupled between the second power lead and a third power lead, and the second power source provides a second voltage that alternates between positive and negative during each of the multiple cycles. A controller of the system controls the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage, are simultaneously negative during a portion of each cycle and simultaneously positive during another portion of each cycle.

Abstract: A sputtering system and method are disclosed. The system includes a first power source that is configured to apply a first voltage at a first electrode that alternates between positive and negative relative to a second electrode during each of multiple cycles. A second power source is coupled to a third electrode and the second electrode, and the second power source is configured to apply a second voltage to the third electrode that alternates between positive and negative relative to the second electrode during each of the multiple cycles. A controller is configured to control the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage, are simultaneously negative during a portion of each cycle and simultaneously positive relative to the second electrode during another portion of each cycle.

Abstract: Methods and apparatus for applying pulsed DC power to a plasma processing chamber are disclosed. In some implementations, frequency of the applied power is varied to achieve desired processing effects such as deposition rate, arc rate, and film characteristics. In addition, a method and apparatus are disclosed that utilize a relatively high potential during a reverse-potential portion of a particular cycle to mitigate possible nodule formation on the target. The relative durations of the reverse-potential portion, a sputtering portion, and a recovery portion of the cycle are adjustable to effectuate desired processing effects.

Abstract: One embodiment comprises a plasma processing system having a plasma chamber, a generator, a feedback component, and a controller. The feedback component is adapted to receive at least one first signal having a level dependent upon the power signal supplied from the generator to the chamber. A feedback output is adapted to emit a second signal to the controller, which is adapted to supply a third signal to the power generator. The third signal is configured to control the power generator to supply the power signal at a power level for a particular processing application. The power generator is further controlled by the controller to one of reduce and remove power from the plasma processing chamber and subsequently increase the voltage level until the power level reaches a threshold level. The power generator is further controlled to subsequently modulate the voltage until the voltage returns to a first voltage level.

Abstract: Methods and apparatus for applying pulsed DC power to a plasma processing chamber are disclosed. In some implementations, frequency of the applied power is varied to achieve desired processing effects such as deposition rate, arc rate, and film characteristics. In addition, a method and apparatus are disclosed that utilize a relatively high potential during a reverse-potential portion of a particular cycle to mitigate possible nodule formation on the target. The relative durations of the reverse-potential portion, a sputtering portion, and a recovery portion of the cycle are adjustable to effectuate desired processing effects.

Abstract: One embodiment comprises a plasma processing system having a plasma chamber, a generator, a feedback component, and a controller. The feedback component is adapted to receive at least one first signal having a level dependent upon the power signal supplied from the generator to the chamber. A feedback output is adapted to emit a second signal to the controller, which is adapted to supply a third signal to the power generator. The third signal is configured to control the power generator to supply the power signal at a power level for a particular processing application. The power generator is further controlled by the controller to one of reduce and remove power from the plasma processing chamber and subsequently increase the voltage level until the power level reaches a threshold level. The power generator is further controlled to subsequently modulate the voltage until the voltage returns to a first voltage level.