Abstract: An improved process for cleaning a semiconductor wafer surface during manufacture to remove metallic contaminants without the use of robotics and without risk of scanning droplets falling from the wafer, in a faster time than with a manual process using a vacuum wand, comprising: a) positioning a wafer on a rotating plate pivotably mounted above a platform; b) contacting the wafer with a metals scanning solution droplet from the tip of a drop probe, the solution being adhered in a bottom portion of the drop probe above the wafer in a material of a surface tension sufficiently higher than the surface tension on the wafer, the drop probe being pivotably connected to a pivot arm which upon pivoting or turning one notch enables droplet sweeping of metal contaminants on a concentric circle on the wafer on the rotating plate; c) successively turning the pivot arm a sufficient number of notches to enable completion of wafer droplet sweepings through concentric circles to reach the edge of the wafer until all of t

Abstract: An improved process for cleaning a semiconductor wafer surface during manufacture to remove metallic contaminants without the use of robotics and without risk of scanning droplets falling from the wafer, in a faster time than with a manual process using a vacuum wand, comprising: