Abstract: A pagewide printhead for an inkjet printer employs a stretch-to-fit flex circuit with orifices indexed to reference indentations on the flex circuit. Heater resistors disposed on a block of thermally stable insulating material are indexed to reference features accurately located on the block. The reference indentations are fitted to the reference indentations to provide accurate registration of the orifices to the heater resistors.

Abstract: A method and apparatus to decompose nonhydrolyzable ambients such as chlorofluorocarbons and nitrogen trifluoride which enables the conventional disposal of their byproducts are disclosed. It employs photo-decomposition of the nonhydrolyzable ambient using UV light and a mediating species to allow chemical reactions to occur which form an effluent which is hydrolyzed by conventional methods. This abatement process is amenable to point-of-use decomposition systems required for modular cluster tool systems used in microelectronic device fabrication.

Abstract: A method of simultaneously improving the spectral response and dark current characteristics of an image gathering detector is disclosed. The method uses an excimer laser to redistribute and activate ion implanted dopant species in the backside of an image gathering device such as a backside-illuminated CCD. Alternately, the excimer laser is used to incorporate dopants from a gaseous ambient into the backside of the image gathering device and simultaneously redistribute and activate the dopants. The redistribution of the dopant is controlled by the laser pulses and provides for a peak dopant concentration at the back surface of the image gathering device which provides for improved spectral response and simultaneously improves dark current characteristics.

Abstract: A method uses an excimer laser to activate previously implanted dopant species in the backside of a backside-illuminated CCD or to incorporate dopant ions from a gaseous ambient into the backside of a backside-illuminated CCD and simultaneously activate. The controlled ion implantation of the backside and subsequent thin layer heating by the short wavelength pulsed excimer laser energy activates the dopant and provides for an improved dark current response and improved spectral response. The energy of the pulsed excimer laser is applied uniformly across a backside-illuminated CCD in a very thin layer of the semiconductor substrate (usually silicon) material that requires annealing to uniformly activate the dopant. The very thin layer of the material can be heated to exceedingly high temperatures on a nanosecond time scale while the bulk of the delicate CCD substrate remains at low temperature.

Abstract: A light stop having at least one appropriately laser textured surface assures the absorption of energy including laser emissions that impinge on the at least one surface to thereby inhibit reflected energy therefrom. Optionally, an improved emitter of energy is created by at least one appropriately laser textured surface having an increased surface area of emission to increase the emissive power of the surface to thereby provide improved conductive and radiative cooling. An improved absorber and emitter is fabricated by providing front side and backside textured surfaces. All these capabilities are provided in a variety of structural configurations.

Abstract: A method and apparatus to decompose nonhydrolyzable ambients such as chloluorocarbons and nitrogen trifluoride which enables the conventional disposal of their byproducts are disclosed. It employs photo-decomposition of the nonhydrolyzable ambient using UV light and a mediating species to allow chemical reactions to occur which form an effluent which is hydrolyzed by conventional methods. This abatement process is amenable to point-of-use decomposition systems required for modular cluster tool systems used in microelectronic device fabrication.

Abstract: A method of fabricating epitaxial thin films, such as doped films or silicon-on-sapphire films, relies upon ultrahigh vacuum vapor deposition. The method calls for a preparing of an ultrahigh vacuum chamber to reduce water and oxygen pressure to below 10.sup.-10 Torr. At at least one sapphire substrate is placed in the ultrahigh vacuum chamber and is purged in the chamber with about 600 sccm hydrogen for about 5 minutes. A silicon film or a doped film is deposited on the sapphire substrate at temperatures between about 700 and 850.degree. C. with base pressures between about 1.0 and 2.0.mu. and gas flow rates of about 2.0 sccm SiH.sub.4 and 20 sccm H.sub.2 for about 30 minutes to provide an about 1000 .ANG. thick silicon film, or, doped film, on the sapphire substrate.

Abstract: An etching process allows a selective single-step patterning of silicon devices in a noncorrosive environment. The etching of silicon relies on a maskless laser-assisted technique in a gaseous halocarbon ambient, such as the gaseous chlorofluorocarbons, dichlorodifluoromethane and chloropentafluoroethane. Laser-assisted photothermal chemical etching reactions on silicon occur in these ambients when the incident fluence from an excimer laser at 248 nm exceeds the melt threshold (approximately 0.75 J/cm.sup.2). When incident fluence exceeds the ablation threshold (approximately 2.2 J/cm.sup.2) an undesirable, increased surface roughness is observed. Etch rates as large as approximately 15 angstroms per pulse are attained within predetermined processing windows. This provides a means for thin membrane formation in silicon, rapid etches and processing of packaged devices or partially fabricated dies.

Abstract: A method to decompose chlorofluorocarbons gases (CFCs) enables the conventional disposal of their by-products. It employs photodecomposition of the CFC gas using UV light and a mediating species to allow chemical reactions to occur which form an effluent which is hydrolyzed by conventional methods.

Abstract: An etching process allows a selective single-step patterning of III-V or II-VI semiconductor compound devices such as GaAs and InP or CdS and ZnSe in a noncorrosive environment. The etching relies on a maskless laser-assisted technique in a gaseous chlorofluorocarbon ambient, such as gaseous dichlorodifluoromethane and chloropentafluoroethane. Laser-assisted photothermal chemical etching reactions on the III-V or II-VI semiconductor compounds occur in these ambients when the incident fluence from an excimer laser at 248 nm exceeds the melt threshold. This provides a means for thin membrane formation in III-V or II-VI semiconductor compounds, rapid etches and processing of packaged devices or partially fabricated dies. The reduction in processing steps as compared to conventional wet chemical etches provides improvements in yield, reliability and cost.

Abstract: An etching process allows a selective single-step patterning of silicon devices in a noncorrosive environment. The etching of silicon relies on a maskless laser-assisted technique in a gaseous halocarbon ambient, such as the gaseous chlorofluorocarbons, dichlorodifluoromethane and chloropentafluoroethane. Laser-assisted photothermal chemical etching reactions on silicon occur in these ambients when the incident fluence from an excimer laser at 248 nm exceeds the melt threshold (approximately 0.75 J/cm.sup.2). When incident fluence exceeds the ablation threshold (approximately 2.2 J/cm.sup.2) an undesirable, increased surface roughness is observed. Etch rates as large as approximately 15 angstroms per pulse are attained within predetermined processing windows. This provides a means for thin membrane formation in silicon, rapid etches and processing of packaged devices or partially fabricated dies.

Abstract: Silicon-on-sapphire substrates are provided for the fabrication of micromechanical devices, such as micromotors. The high voltage stand-off characteristics of silicon-on-sapphire thereby provides for the construction of superior electrostatically driven devices and sensors capable of being driven at significantly higher applied potentials since silicon-on-sapphire has demonstrated a capability for building in the range of hundreds of Angstroms, or thick, in the range of microns very high speed, low power, very densely packed integrated circuits using standard silicon processing techniques. As a consequence, the electrostatically driven devices, micromotors, can be incorporated in the integrated circuits and yet be powered at elevated voltages to increase their work potential.

Abstract: A method of rapid sample handling in a production environment for laser processing of individual microelectronic die is particularly suited for handling partially fabricated die and die which are susceptible to mechanical and electrostatic damage, such as backside illuminated CCDs requiring backside dopant activation and laser texturing of sidewalls. Securing a die within a modified sample holder provides for electrostatic and mechanical protection during laser processing. Placing the modified die holder onto a feeder base portion that engages a "tractor-feed" translation subsystem protects the die during a translation and positioning of the die below and aligned with a laser processing structure. A window holder is engaged with the die holder to seal the die in a processing chamber and to assure an appropriate pressurizing with a gaseous ambient for a desired processing.

Abstract: A non-contact method to impart a texture to a surface using laser irradian uses an excimer laser to illuminate a sample immersed in a halocarbon ambient thereby initiating a photo/thermal chemical reaction which etches the sample only in the area illuminated with sufficient laser fluence. The resulting etched area can be repetively illuminated and etched to provide a textured surface to reduce extraneous reflections, or for micromachining, decorative texturing and marking. This technique is particularly well suited to improve the performance of backside illuminated CCDs by reducing the background (dark) signal, increase resolution and responsivity uniformity. The technique is compatible with other laser processing procedures and can be implemented with a variety of CCD enhancements such as improved dark current and blue response from laser doping or activation of backside implants.

Abstract: An etching process allows a selective single-step patterning of III-V or VI semiconductor compound devices such as GaAs and InP or CdS and ZnSe in a noncorrosive environment. The etching relies on a maskless laser-assisted technique in a gaseous chlorofluorocarbon ambient, such as gaseous dichlorodifluoromethane and chloropentafluoroethane. Laser-assisted photothermal chemical etching reactions on the III-V or II-VI semiconductor compounds occur in these ambients when the incident fluence from an excimer laser at 248 nm exceeds the melt threshold. This provides a means for thin membrane formation in III-V or II-VI semiconductor compounds, rapid etches and processing of packaged devices or partially fabricated dies. The reduction in processing steps as compared to conventional wet chemical etches provides improvements in yield, reliability and cost.

Abstract: Processing methods transform ferroelectric precursor films into a desired crystalline structure without adversely heating nearby materials and circuitry such as those found associated with lead zirconate titanate films. The thin film sample is placed within an appropriate chamber, where a suitable ambient is in contact with the thin film sample. The ambient may be air, oxygen or any other ambient which is known in the art to be appropriate for annealing ferroelectric materials. In this regard annealing in air can done without the processing chamber. The process for annealing relies upon continuous wave (CW) laser annealing, pulse UV annealing with or without a laser and various combinations of thermal pretreatment and processing to allow solid state diffusion in accordance with parameters appropriate for a particular application. Methods of laser patterning thin film ferroelectrics without adversely damaging adjacent or underlying layers, e.g. electrodes, are also disclosed.

Abstract: STATEMENT OF GOVERNMENT INTERESTThe invention described herein may be manufactured and used by or for the Government of the United States of America for governmental purposes without the payment of any royalties thereon or therefor.