Abstract: The present invention provides a system and method for measuring an impedance of one or more target cells before and after an electroporation protocol has been applied to the one or more target cells. The result of the impedance measurement provides a feedback control that can be implemented during and/or after the electroporation protocol to customize the electrical treatment for a particular target cell or cellular tissue.

Abstract: A blade for a ceiling fan can include a first half and a second half formed from a pulp material. The first half is attachable to the second half to form the blade. Additionally, a blade can include a skeleton with an over molding made from a pulp forming the blade. Furthermore, a blade can be formed using a blade base with a pulp topper added to the blade to form an aerodynamic shape for the blade.

Abstract: Methods of forming air gaps in hole and trench structures are disclosed. The methods may be used to form buried voids, i.e., voids for which the top is below the top of the adjacent features. The methods include inhibition of the hole or trench structures and selective deposition at the top of the structure forming an air gap within the structures. In some embodiments, the methods are to reduce intra-level capacitance in semiconductor devices.

Abstract: Various embodiments herein relate to methods and apparatus for depositing silicon oxide using thermal ALD or thermal CVD. In one aspect of the disclosed embodiments, a method for depositing silicon oxide is provided, the method including: (a) receiving the substrate in a reaction chamber; (b) introducing a first flow of a first reactant into the reaction chamber and exposing the substrate to the first reactant, where the first reactant includes a silicon-containing reactant; (c) introducing a second flow of a second reactant into the reaction chamber to cause a reaction between the first reactant and the second reactant, (i) where the second reactant includes hydrogen (H2) and an oxygen-containing reactant, (ii) where the reaction deposits silicon oxide on the substrate, and (iii) where the reaction is initiated when a pressure in the reaction chamber is greater than 10 Torr and equal to or less than about 40 Torr.

Abstract: Methods of depositing silicon oxide on carbon-based films on a substrate involve adsorbing a silicon-containing reactant on the substrate surfaces, generating oxygen radicals from N2O, and exposing the adsorbed silicon-containing reactant to the oxygen radicals to form a silicon oxide film. In some embodiments, the carbon-based films form features having sidewalls. The methods result in low carbon loss and substantially vertical sidewalls. Embodiments of the methods are performed at high temperatures that facilitate high quality deposition.

Abstract: Silicon-containing films, such as silicon oxide films, having high quality are deposited on semiconductor substrates using reactions of silicon-containing precursors in high temperature ALD processes. In some embodiments, provided precursors are suitable for deposition of silicon-containing films at temperatures of at least about 500° C., such as greater than about 550° C. For example, silicon oxide can be deposited at high temperature by a reaction of the silicon-containing precursor with an oxygen-containing reactant (e.g., O3 O2, H2O) on a substrate's surface. In some implementations, the suitable precursor includes at least one silicon-silicon bond, at least one leaving group (e.g., a halogen), and, optionally, at least one electron-donating group (e.g., an alkyl). The precursors are suitable, in some implementations, for both thermal ALD and for PEALD. In some embodiments, a single precursor is used in both thermal ALD and in PEALD during deposition of a single silicon oxide film.

Abstract: A NAND structure and method of fabricating the structure are described. A multi-layer ONON stack is deposited on a Si substrate and a field oxide grown thereon. A portion of the field oxide is removed, and high-aspect-ratio channels are etched in the stack. The channels are filled with a Si oxide using a thermal ALD process. The thermal ALD process includes multiple growth cycles followed by a passivation cycle. Each growth cycle includes treating the surface oxide surface using an inhibitor followed by multiple cycles to deposit the oxide on the treated surface using a precursor and source of the oxide. The passivation after the growth cycle removes the residual inhibitor. The Si oxide is recess etched using a wet chemical etch of DHF and then capped using a poly-Si cap.

Abstract: Methods for filling gaps with dielectric material involve deposition using an atomic layer deposition (ALD) technique to fill a gap followed by deposition of a cap layer on the filled gap by a chemical vapor deposition (CVD) technique. The ALD deposition may be a plasma-enhanced ALD (PEALD) or thermal ALD (tALD) deposition. The CVD deposition may be plasma-enhanced CVD (PECVD) or thermal CVD (tCVD) deposition. In some embodiments, the CVD deposition is performed in the same chamber as the ALD deposition without intervening process operations. This in-situ deposition of the cap layer results in a high throughput process with high uniformity. After the process, the wafer is ready for chemical-mechanical planarization (CMP) in some embodiments.

Abstract: Methods and apparatuses for depositing material into high aspect ratio features are described herein. Methods involve depositing an oxide material using a hydrogen-containing oxidizing chemistry. Methods may also involve thermally treating deposited oxide material in the presence of hydrogen to remove seams within the deposited oxide material.

Abstract: A semiconductor device is provided, which includes a multi-layered substrate having an interposed polymeric film and a device layer arranged over the multi-layered substrate.

Abstract: Silicon oxide, silicon nitride, and silicon oxynitride films may be deposited by thermal atomic layer deposition (thermal ALD) in a single wafer plasma reactor. The single wafer plasma reactor can perform thermal ALD and plasma-enhanced atomic layer deposition (PEALD). Highly conformal films may be deposited at a high deposition rate without damaging or with minimal damage to the substrate using thermal ALD. The substrate may be heated at an elevated temperature during oxidation and/or nitridation. In some implementations, the elevated temperature is between about 500 C and about 750 C. In some implementations, hydrogen and oxygen may be flowed as reactant gases during oxidation, where the hydrogen and oxygen may react in an exothermic reaction to drive formation of oxide.

Abstract: The present invention provides a system and method for measuring the impedance of one more target cells before and after an electroporation protocol has been applied to the cells. The result of the impedance measurement provides a feedback control that can be implemented during and/or after the electroporation protocol to customize the electrical treatment for a particular target cell or cellular tissue.

Abstract: Methods of providing control of film properties during atomic layer deposition using intermittent plasma treatment in-situ are provided herein. Methods include modulating gas flow rate ratios used to generate plasma during intermittent plasma treatment, toggling plasma power, and modulating chamber pressure.

Abstract: The present invention provides a system and a method for measuring an impedance of one or more target cells before and after an electroporation protocol has been applied to the one or more target cells. A result of the impedance measurement provides a feedback control that can be implemented during and/or after the electroporation protocol to customize an electrical treatment for a particular target cell or cellular tissue.

Abstract: A method of calibrating a feedback-based noise cancellation system of an ear device may involve obtaining a measured plant response of the ear device, obtaining a reference plant response value and determining a plant response variation between the reference plant response value and a value corresponding to the measured plant response. The method may involve obtaining a measured a coupler response of the ear device, obtaining a reference coupler response value and determining a coupler response variation between the reference coupler response value and a value corresponding to the measured coupler response. The method may involve determining, based at least in part on the plant response variation and the coupler response variation, a microphone signal gain correction factor and applying the microphone signal gain correction factor to ear device microphone signals that are input to a feedback loop of the feedback-based noise cancellation system.

Abstract: Various embodiments include methods to produce low dielectric-constant (low-k) films. In one embodiment, alternating ALD cycles and dopant materials are used to generate a new family of silicon low-k materials. Specifically, these materials were developed to fill high-aspect-ratio structures with re-entrant features. However, such films are also useful in blanket applications where conformal nanolaminates are applicable. Various embodiments also disclose SiOF as well as SiOCF, SiONF, GeOCF, and GeOF. Analogous films may include halide derivatives with iodine and bromine (e.g., replace “F” with “I” or “Br”). Other methods, chemistries, and techniques are disclosed.

Abstract: An apparatus is provided comprising a process chamber, a precursor gas source, a reactant gas source, an inhibitor gas source, a passivation gas source, a gas, a switching manifold, and a controller.

Abstract: A method for processing a substrate is described. A first reactant in vapor phase is introduced into a reaction chamber having the substrate therein. The first reactant is allowed to be adsorb onto the substrate surface. The non-reactive portion of the first reactant is purged from the reaction chamber after a flow of the first reactant has ceased. The second reactant is introduced in vapor phase into the reaction chamber while the first reactant is adsorbed onto the substrate surface. The second reactant comprises a 1:1:1 ratio of dihydrogen (H2), a nitrogen-containing reactant, and an oxygen-containing reactant. A plasma is ignited based on the second reactant. The substrate surface is exposed to the plasma. The plasma is extinguished. Gas from the reaction chamber is purged.

Abstract: A semiconductor device is provided, which includes a multi-layered substrate having an interposed polymeric film and a device layer arranged over the multi-layered substrate.

Abstract: A method of calibrating a feedback-based noise cancellation system of an ear device may involve obtaining a measured plant response of the ear device, obtaining a reference plant response value and determining a plant response variation between the reference plant response value and a value corresponding to the measured plant response. The method may involve obtaining a measured a coupler response of the ear device, obtaining a reference coupler response value and determining a coupler response variation between the reference coupler response value and a value corresponding to the measured coupler response. The method may involve determining, based at least in part on the plant response variation and the coupler response variation, a microphone signal gain correction factor and applying the microphone signal gain correction factor to ear device microphone signals that are input to a feedback loop of the feedback-based noise cancellation system.