Abstract: A compound having the following formula is disclosed. The compound is useful as an emitter in OLED applications.

Abstract: A compound of Formula I, is provided. In Formula I, one of Z1, Z2, and Z3 is N and the remainder are C; each of L1 and L2 is independently selected from a direct bond and a linking group; at least one of R1, R2, RA, RB, RC, RD, and RE comprises a group R* having a structure selected form the group consisting of Formula II, -Q(R3)(R4)a(R5)b, Formula III, and Formula IV, Each R, R?, R?, R1, R2, R3, R4, R5, RA, RB, RC, RD, RE, RF, RG, and RH is independently hydrogen or a General Substituent, with the proviso that group R* is not adamantyl. Formulations, OLEDs, and consumer products containing the compound are also provided.

Abstract: A vertical-sidewall dual-mesa static induction transistor (SIT) structure includes a silicon carbide substrate having a layer arrangement formed thereon. Laterally spaced ion implanted gate regions are defined in the layer arrangement. Source regions are defined in the layer arrangement. Each of the source regions can include a channel mesa having a source mesa disposed thereon. The source mesa includes upright sidewalls relative to a principal plane of the substrate defining a horizontal dimension thereof. The channel mesa includes upright sidewalls relative to the source mesa and the principal plane of the substrate. Also disclosed is a method of fabricating a vertical-sidewall dual-mesa SiC transistor device. The method includes implanting ions at an angle relative to a principal plane of the substrate to form gate junctions in upper portions of the substrate and lateral portions of the upright channel mesas.

Abstract: A method of ion cleaving using microwave radiation is described. The method includes using microwave radiation to induce exfoliation of a semiconductor layer from a donor substrate. The donor substrate may be implanted, bonded to a carrier substrate, and heated via the microwave radiation. The implanted portion of the donor substrate may include increased damage and/or dipoles (relative to non-implanted portions of the donor substrate), which more readily absorb microwave radiation. Consequently, by using microwave radiation, an exfoliation time may be reduced to 12 seconds or less. In addition, a presented method also includes the use of focused ion beam implantation to achieve a pattern-less transfer of a semiconductor layer onto a carrier substrate.

Abstract: An electronic apparatus uses a single crystalline silicon substrate disposed adjacent to a flexible substrate. The electronic apparatus may be a flexible flat panel display, or a flexible printed circuit board. The flexible substrate can be made from polymer, plastic, paper, flexible glass, and stainless steel. The flexible substrate is bonded to the single crystalline substrate using an ion implantation process. The ion implantation process involves the use of a noble gas such as hydrogen, helium, xenon, and krypton. A plurality of semiconductor devices are formed on the single crystalline silicon substrate. The semiconductor devices may be thin film transistors for the flat panel display, or active and passive components for the electronic device.