Patents by Inventor Douglas Chen

Douglas Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12001038
    Abstract: The disclosed patterned wavelength-selective material and process for making the patterned wavelength-selective material uses patterned applied adhesive and a structurally weak wavelength-selective material that includes portions that contact the adhesive and break to remain in contact with the adhesive. In one embodiment, the wavelength-selective material comprises an array of sections with cuts at least partially through a wavelength-selective film at each section secured to the adhesive. In another embodiment, the wavelength-selective film comprises a transfer stack of layers.
    Type: Grant
    Filed: July 23, 2019
    Date of Patent: June 4, 2024
    Assignee: 3M Innovative Properties Company
    Inventors: Kui Chen-Ho, Douglas S. Dunn, Tien Yi T. H. Whiting, Bryan T. Whiting, Taylor J. Kobe, Anthony F. Schultz, Duane D. Fansler, Jonah Shaver, John A. Wheatley, Susannah C. Clear, Daniel J. Theis, John T. Strand, Thomas J. Metzler, Kevin W. Gotrik, Scott J. Jones
  • Publication number: 20240168808
    Abstract: A computer system includes a transceiver that receives over a data communications network different types of input data from multiple source nodes and a processing system that defines for each of multiple data categories, a set of groups of data objects for the data category based on the different types of input data. Predictive machine learning model(s) predict a selection score for each group of data objects in the set of groups of data objects for the data category for a predetermined time period. Control machine learning model(s) determine how many data objects are permitted for each group of data objects based on the selection score. Decision-making machine learning model(s) prioritize the permitted data objects based on one or more predetermined priority criteria. Subsequent activities of the computer system are monitored to calculate performance metrics for each group of data objects and for data objects actually selected during the predetermined time period.
    Type: Application
    Filed: January 30, 2024
    Publication date: May 23, 2024
    Inventors: Shihui CHEN, Keon Shik KIM, Douglas HAMILTON
  • Patent number: 11955333
    Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.
    Type: Grant
    Filed: March 22, 2021
    Date of Patent: April 9, 2024
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jethro Tannos, Bhargav Sridhar Citla, Srinivas D. Nemani, Ellie Yieh, Joshua Alan Rubnitz, Erica Chen, Soham Sunjay Asrani, Nikolaos Bekiaris, Douglas Arthur Buchberger, Jr.
  • Patent number: 11953706
    Abstract: Wavelength-selective films are visibly apparent under the selective wavelength. Wavelength-selective films typically reflect off axis the selected wavelength and therefore can provide high-contrast against a background when applied in a pattern on a substrate. However, it is difficult to apply unique patterned embedded images from film. Disclosed is a cost-effective method and construction of a patterned wavelength-selective image to a substrate. In the disclosed wavelength-selective image, wavelength-selective film particles are applied to an adhesive pattern to create the wavelength-selective image.
    Type: Grant
    Filed: July 23, 2019
    Date of Patent: April 9, 2024
    Assignee: 3M INNOVATIVE PROPERTIES COMPANY
    Inventors: Kui Chen-Ho, Kenneth L. Smith, Douglas S. Dunn, Tien Yi T. H. Whiting, John A. Wheatley, Bryan T. Whiting, Taylor J. Kobe, Anthony F. Schultz, Duane D. Fansler, Jonah Shaver
  • Patent number: 11924031
    Abstract: Systems and methods for providing a container network interface (CNI) specification that has been modified with a set of annotations, a set of operations, and a set of policies to provide network configuration reuse, network configuration replication, and database management (garbage collection) functionality are described. In response to receiving a request to initiate a function, whether the function is to be reused or replicated may be determined. In response to determining that the function is to be reused, calling a container network interface (CNI) plugin with a first operation that decouples database functions from network functions, so that the database can cache and reuse a network configuration generated for the function. In response to determining that the function is to be replicated, calling the CNI plugin with a second operation to create the network configuration and generate and store a template of the network configuration in the database.
    Type: Grant
    Filed: September 7, 2021
    Date of Patent: March 5, 2024
    Assignee: Red Hat, Inc.
    Inventors: Douglas Smith, Huamin Chen, Ricardo Noriega De Soto
  • Patent number: 11923978
    Abstract: A multi-port transceiver comprises a plurality of first ports, a first communication interface, and a second communication interface. Multi-rate interleaver circuitry interleaves i) a plurality of first data streams, each received via a respective first port at a first data rate, and ii) a second data stream received via the first communication interface at a second data rate, to generate a third data stream to be transmitted via the second communication interface at a third data rate. Multi-rate deinterleaver circuitry deinterleaves a fourth data stream that was received via the second communication interface at the third data rate into i) a plurality of fifth data streams, each fifth data stream to be transmitted via a respective first port at the first data rate, and ii) a sixth data stream to be transmitted via the first communication interface at the second data rate.
    Type: Grant
    Filed: May 13, 2022
    Date of Patent: March 5, 2024
    Assignee: Marvell Asia Pte Ltd
    Inventors: Sabu Ghazali, Lenin Patra, Jeng-Jong Douglas Chen, Dong-Seok Youm, Tunghao Tsai, Kong Chuan Susanto
  • Patent number: 11922217
    Abstract: A computer system includes a transceiver that receives over a data communications network different types of input data from multiple source nodes and a processing system that defines for each of multiple data categories, a set of groups of data objects for the data category based on the different types of input data. Predictive machine learning model(s) predict a selection score for each group of data objects in the set of groups of data objects for the data category for a predetermined time period. Control machine learning model(s) determine how many data objects are permitted for each group of data objects based on the selection score. Decision-making machine learning model(s) prioritize the permitted data objects based on one or more predetermined priority criteria. Subsequent activities of the computer system are monitored to calculate performance metrics for each group of data objects and for data objects actually selected during the predetermined time period.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: March 5, 2024
    Assignee: Nasdaq, Inc.
    Inventors: Shihui Chen, Keon Shik Kim, Douglas Hamilton
  • Publication number: 20230269015
    Abstract: Timestamp circuitry of a network device modifies a packet by embedding a future timestamp in the packet to generate a timestamped packet. The future timestamp corresponds to a transmit time that occurs after the timestamp circuitry embeds the future timestamp in the packet. The timing information is added to the packet and the packet is then transferred to transmitter circuitry of the network device via a communication link, internal to the network device, that operates according to a media independent communication interface. Time gating circuitry of the transmitter circuitry i) holds the timestamped packet from proceeding to a network link coupled to the network device prior to a current time reaching the transmit time, and ii) releases the timestamped packet for transmission via the network link in response to the current time reaching the transmit time.
    Type: Application
    Filed: February 24, 2023
    Publication date: August 24, 2023
    Inventors: Nitzan DROR, Jeng-Jong Douglas CHEN, Lenin Kumar PATRA
  • Publication number: 20220345238
    Abstract: In a network having at least one slave node including a slave clock, a method of adjusting the slave clock relative to a master clock of a master node includes, at the slave node, correcting a time of day of the slave clock using (a) a slave pulse signal having a known slave pulse rate, (b) a time-of-day counter of the slave node, and (c) a master pulse signal, based on values of the slave clock at nearest corresponding edges of the slave pulse signal and the master pulse signal, and correcting a frequency of the slave clock using the slave pulse signal, a clock signal of the slave node, and the master pulse signal, based on values of the slave clock at nearest corresponding edges of the master pulse signal. No other clock signal from outside the slave node is used for the corrections.
    Type: Application
    Filed: April 20, 2022
    Publication date: October 27, 2022
    Inventors: Yao Fu, Lenin Kumar Patra, Jeng-Jong Douglas Chen, Xiaoqing Ma, Joergen P.R. Hofman-Bang, Yangyang Zhang
  • Patent number: 6820224
    Abstract: Aspects for increasing yield in an embedded memory device are described. With the aspects of the present invention, a cache is provided for a memory unit of an embedded memory device. Attempts to access a failed bit memory location in the memory unit are determined. When a failed memory bit location is being accessed, substitution of a memory location in the cache for the failed bit memory location occurs.
    Type: Grant
    Filed: April 4, 2000
    Date of Patent: November 16, 2004
    Assignee: ProMOS Technologies Inc.
    Inventors: Hung-Mao Lin, Jyh-Cherng Lin, Douglas Chen
  • Patent number: 6489953
    Abstract: Aspects for generating CRT timing signals in a graphics accelerator are described. A method aspect includes shifting reference count values forward by a predetermined count period. A single comparator is utilized to perform a plurality of comparisons between CRT timing signals and at least one of the reference count values during the predetermined count period. Further, compensation for the shifting forward occurs by shifting back signals output from the single comparator. With the present invention, CRT timing signals are generated through time-shifting of relevant signals. The time-shifting further allows the utilization of a single comparator, which reduces the logic gate requirement and thus the area and cost.
    Type: Grant
    Filed: December 15, 1999
    Date of Patent: December 3, 2002
    Assignee: Silicon Magic Corporation
    Inventor: Douglas Chen
  • Patent number: 5723893
    Abstract: A method is described for fabricating field effect transistors (FETs) having double silicide gate electrodes and interconnecting lines for CMOS circuits. The method reduces the IR voltage drops and RC time delay constants, and thereby improves circuit performance. The method consists of forming FETs having gate electrodes and interconnecting lines from a multilayer made up of a doped first polysilicon layer, a first silicide layer (WSi.sub.2), and a doped second polysilicon layer. After patterning the multilayer to form the gate electrodes, a titanium (Ti) metal is deposited and annealed to form a second silicide layer on the gate electrodes, and simultaneously forms self-aligned Ti silicide contacts on the source/drain areas. The latitude in overetching the contact openings in an insulating (PMD) layer to the gate electrodes extending over the field oxide area is increased, and the contact resistance (R.sub.c) is reduced because of the presence of the WSi.sub.
    Type: Grant
    Filed: May 28, 1996
    Date of Patent: March 3, 1998
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Douglas Chen-Hua Yu, Pin-Nan Tseng
  • Patent number: D1024147
    Type: Grant
    Filed: July 18, 2023
    Date of Patent: April 23, 2024
    Assignee: Cricut, Inc.
    Inventors: Yung Tseng Chen, Thomas Crisp, John Douglas Dalton, Michael Nolan, Ildefonso M. Resuello, Jr.