Abstract: A semiconductor device and a method for its preparation are disclosed, wherein a body of semiconducting material has at least one bore extending completely therethrough, this bore having a substantially constant diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1, this bore being defined by a region of the semiconducting material in the recrystallized state having therein throughout the region a substantially constant uniform concentration level of atoms of at least one metal selected from the group consisting of aluminum, indium, gallium, antimony, gold, silver and tin in addition to the initial content of the semiconducting material.

Abstract: A semiconductor device and a method for its preparation are disclosed, wherein a body of semiconducting material has at least one bore extending completely therethrough, this bore having a substantially constant diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1, this bore being defined by a region of the semiconducting material in the recrystallized state having therein throughout the region a substantially constant uniform concentration level of atoms of at least one metal selected from the group consisting of aluminum, indium, gallium, antimony, gold, silver and tin in addition to the initial content of the semiconducting material.

Abstract: A semiconductor device and a method for its preparation are disclosed, wherein a semiconductor body has at least one bore extending completely or partially therethrough, this bore being defined by a semiconducting region having a conductivity type opposite to, and resistivity lower than, the material of the body contiguous to the bore-defining semiconducting region, this bore having a substantially constant diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1.

Abstract: A semiconductor device for the detection of radiation in general and X-radiation and infrared radiation in particular is provided.

Abstract: A semiconductor electronic device operates at high power levels using structured copper to reduce generation of stress between the elements of the device during thermal cycling in the course of normal operation. Structured copper strain buffers are used to attach each side of a silicon wafer to fluid cooled heat sinks to provide efficient removal of heat generated by the device and good electrical connection to the silicon wafer.

Abstract: A structured copper strain buffer, which is thermally and electrically conductive is provided for use with semiconductor electronic devices. A thermo-compression diffusion bond is used to attach a metallic foil to a structured copper disk to form the strain buffer. The individual strands of copper within the strain buffer are capable of independent movement. The structured copper strain buffer provides a means of attachment to a semiconductor device without causing a stress to be generated at the attached surface of the device as the device expands and contracts with temperature changes.

Abstract: A method is provided for thermo-compression diffusion bonding respective structured copper strain buffers directly to each of the two major opposed surfaces of a substrateless semiconductor device wafer having a beveled outer edge surface. A selected portion of each strain buffer axially aligned with a like portion of the other strain buffer is diffusion bonded to the wafer while subjecting the wafer only to substantially compressive force so as to avoid wafer fracture. The lateral extent of each strain buffer is less than that of the respective wafer surface in contact therewith, allowing the beveled surface to be cleaned and passivated prior to attachment of the strain buffers to the wafer via diffusion bonding.

Abstract: A method is provided for thermo-compression diffusion bonding first and second structured copper strain buffers, respectively, directly to the two opposed surfaces of a substrateless semiconductor device wafer. The expensive tungsten or molybdenum support plate conventionally used to provide structural integrity to the relatively fragile semiconductor device wafer is thus eliminated. The method includes sandwiching the semiconductor device wafer between copper strand type strain buffers each having a lateral extent greater than the lateral extent of the wafer, diffusion bonding the strain buffers to the semiconductor device via first and second metallic coating layers, and removing most of the overhanging portions of the buffer which are not bonded to the wafer. A step of etching and passivating the edges of the wafer is also disclosed.

Abstract: A method which utilizes thermo-compression diffusion bonding to attach a metal foil to structured copper. The different rate of expansion of metal press members with temperature creates a force which squeezes the foil and copper together to achieve a bond when the press and the parts to be joined are heated to an elevated temperature. Because of the high pressure achieved by the press, diffusion bonding occurs at a low enough temperature to avoid problems associated with use of the liquid phase of any of the metals undergoing bonding.

Abstract: An improved method for thermo-compression diffusion bonding allows bonding of a compliant metallic member to a second metallic member which may have surface irregularities. Opposite surfaces of the compliant metallic member are contacted by a layer of compactible material and by the second metallic member, respectively, such that distribution of a loading force applied to this assembly conforms the compliant member to the irregularities in the surface contour of the second metallic member. Thus, a uniform substantially void-free diffusion bond between the two metallic members is achieved.

Abstract: A sealant film is employed to migrate species having a high intrinsic vapor pressure through a solid body of semiconductor material by temperature gradient zone melting.

Abstract: A thin opaque layer of material is deposited on one or both major opposed surfaces of a semiconductor wafer to enhance establishing a thermal gradient near the major surface or surfaces to produce straight, fine molten wires (<0.002") of a metal by migration of a melt of the metal through a solid, or matrix, both of semiconductor material by thermal gradient zone melting processing along a thermal gradient established and maintained aligned substantially parallel with a preferred crystal axis of migration by thermal gradient zone melting processing.

Abstract: Uniform initiation and migration of fine liquid wires by thermal gradient zone melting processing through a solid body of semiconductor material is enhanced by a heavily doped region of the body which includes the surface of initiation of the migration.

Abstract: Mutually perpendicular, intersecting, straight, fine molten wires, (.ltoreq.0.002" in width) can be migrated through a solid matrix body of semiconductor material of (100) planar orientation by migration along a unidirectional thermal gradient which is established and maintained at from 2.degree. to 10.degree. off the normally preferred <100> crystal axis of migration by the thermal gradient zone melting process. All the fine molten metal wires are substantially initiated simultaneously and uniformly along the entire length of each intersecting wire when the lines are arranged in a cross-hatched pattern.

Abstract: Straight, fine molten wires (<0.002") of a metal can be migrated through a solid, or matrix, body of semiconductor material by initiation of the migration of the melt and continuing the migration along a thermal gradient established and maintained at from 2.degree. to 10.degree. off the normally preferred crystal axis of migration by the thermal gradient zone melting processing.

Abstract: A novel grid structure for a field controlled thyristor includes a current controlling grid structure interdigitated with a cathode structure in which the surface area of the cathode structure is substantially greater than that of the grid structure. High forward blocking voltage gain (anode voltage/grid voltage) and low on-state losses in a turn-off type field controlled thyristor are accomplished by providing a surface grid portion and a buried portion which are connected to the surface grid structure and substantially underlies the cathode structure. The buried grid structure is constructed in a manner to provide a high aspect ratio for the channel region.

Abstract: Geometrical design criteria are disclosed for a Gate Modulated BiPolar Transistor, or GAMBIT, which is a three terminal variable negative resistance device. The GAMBIT is a planar, interdigited, integrated device whose electrical characteristics show a voltage controlled negative resistance between two of its terminals. The magnitude of the negative resistance is controlled by the variation of the applied bias to the third terminal.

Abstract: Metal wires of widths as small as 10 microns are successfully migrated by thermal gradient zone melting processing as a molten zone through a body of semiconductor material. The metal wires are migrated to a preselected depth without use of oxide masking and/or etched grooves when the planar orientation of the surface of the body is (100).

Abstract: A Gate Modulated BiPolar Transistor, or GAMBIT, is a three terminal negative resistance device. A load is connected between the emitter and collector terminals and the magnitude of the negative resistance is controlled by the voltage on the gate terminal. An increase in the output voltage modulates the resistance of the gate which decreases the output current.