Abstract: A composition suitable for chemical mechanical polishing a substrate can comprise abrasive particles, a multi-valent metal borate, at least one oxidizer and a solvent. The composition can polish a substrate with a high material removal rate and a very smooth surface finish.

Abstract: A composition suitable for chemical mechanical polishing a substrate can comprise abrasive particles, a multi-valent metal borate, at least one oxidizer and a solvent. The composition can polish a substrate with a high material removal rate and a very smooth surface finish.

Abstract: A fluid composition suitable for chemical mechanical polishing a substrate can in include a multi-valent metal borate, at least one oxidizer, and a solvent. The fluid composition can be essentially free of abrasive particles and may achieve a high material removal rate and excellent surface finish.

Abstract: A composition suitable for chemical mechanical polishing a substrate can comprise abrasive particles, a multi-valent metal borate, at least one oxidizer and a solvent. The composition can polish a substrate with a high material removal rate and a very smooth surface finish.

Abstract: A composition can comprise a carrier including a liquid and an abrasive particulate contained in the carrier, the abrasive particulate having, on average, at least 10 wt % cerium oxide in the abrasive particulate and a cerium 3+ ratio (Ce 3+/total cerium) of at least 0.1. In another embodiment, a slurry composition can comprise a liquid carrier comprising water, cerium oxide particles, and free silicate ions, wherein a material removal rate when polishing a silicon oxide wafer can be is increased by at least 3% in comparison to a slurry composition not including free silicate ions.

Abstract: A composition including a carrier comprising a liquid, an abrasive particulate contained in the carrier, an accelerant contained in the carrier, the accelerant including at least one free anion selected from the group of iodide (I?), bromide (Br?), fluoride (F?), sulfate (SO42?), sulfide (S2?), sulfite (SO32?), chloride (Cl?), silicate (SiO44?), phosphate (PO43?), nitrate (NO3?), carbonate (CO32?), perchlorate (ClO4?), or any combination thereof, and a buffer contained in a saturated concentration in the carrier, the buffer including a compound selected from MaFx, NbFx, MaNbFx, MaIx, NbIx, MaNbIx, MaBrx, NbBrx, MaNbBrx, Ma(SO4)x, Nb(SO4)x, MaNb(SO4)x, MaSx, NbSx, MaNbSx, Ma(SiO4)x, Nb(SiO4)x, MaNb(SiO4)x, Ma(PO4)x, Nb(PO4)x, MaNb(PO4)x, Ma(NO3)x, Nb(NO3)x, MaNb(NO3)x, Ma(CO3)x, Nb(CO3)x, MaNb(CO3)x, or any combination, wherein M represents a metal element or metal compound; N represents a non-metal element; and a, b, and x is 1-6.

Abstract: A fluid composition suitable for chemical mechanical polishing a substrate can in include a multi-valent metal borate, at least one oxidizer, and a solvent. The fluid composition can be essentially free of abrasive particles and may achieve a high material removal rate and excellent surface finish.

Abstract: A composition suitable for chemical mechanical polishing a substrate can comprise abrasive particles, a multi-valent metal borate, at least one oxidizer and a solvent. The composition can polish a substrate with a high material removal rate and a very smooth surface finish.

Abstract: A CMP slurry including a carrier, a particulate material within the carrier including an oxide, carbide, nitride, boride, diamond or any combination thereof, an oxidizer including at least one material selected from the group of peroxides, persulfates, permanganates, periodates, perchlorates, hypocholorites, iodates, peroxymonosulfates, cerric ammonium nitrate, periodic acid, ferricyanides, or any combination thereof, and a material removal rate index (MRR) of at least 500 nm/hr and an average roughness index (Ra) of not greater than 5 Angstroms according to the Standardized Polishing test.

Abstract: A composition can comprise a carrier including a liquid and an abrasive particulate contained in the carrier, the abrasive particulate having, on average, at least 10 wt % cerium oxide in the abrasive particulate and a cerium 3+ ratio (Ce 3+/total cerium) of at least 0.1. In another embodiment, a slurry composition can comprise a liquid carrier comprising water, cerium oxide particles, and free silicate ions, wherein a material removal rate when polishing a silicon oxide wafer can be is increased by at least 3% in comparison to a slurry composition not including free silicate ions.

Abstract: A composition including a carrier comprising a liquid, an abrasive particulate contained in the carrier, an accelerant contained in the carrier, the accelerant including at least one free anion selected from the group of iodide (I?), bromide (Br?), fluoride (F?), sulfate (SO42?), sulfide (S2?), sulfite (SO32?), chloride (Cl?), silicate (SiO44?), phosphate (PO43?), nitrate (NO3?), carbonate (CO32?), perchlorate (ClO4?), or any combination thereof, and a buffer contained in a saturated concentration in the carrier, the buffer including a compound selected from MaFx, NbFx, MaNbFx, MaIx, NbIx, MaNbIx, MaBrx, NbBrx, MaNbBrx, Ma(SO4)x, Nb(SO4)x, MaNb(SO4)x, MaSx, NbSx, MaNbSx, Ma(SiO4)x, Nb(SiO4)x, MaNb(SiO4)x, Ma(PO4)x, Nb(PO4)x, MaNb(PO4)x, Ma(NO3)x, Nb(NO3)x, MaNb(NO3)x, Ma(CO3)x, Nb(CO3)x, MaNb(CO3)x, or any combination, wherein M represents a metal element or metal compound; N represents a non-metal element; and a, b, and x is 1-6.

Abstract: A CMP slurry including a carrier, a particulate material within the carrier including an oxide, carbide, nitride, boride, diamond or any combination thereof, an oxidizer including at least one material selected from the group of peroxides, persulfates, permanganates, periodates, perchlorates, hypocholorites, iodates, peroxymonosulfates, cerric ammonium nitrate, periodic acid, ferricyanides, or any combination thereof, and a material removal rate index (MRR) of at least 500 nm/hr and an average roughness index (Ra) of not greater than 5 Angstroms according to the Standardized Polishing test.

Abstract: A method for cleaning the glass surface of solar panels which employs the use of highly efficient sequestering agents and allows to replace deionized water with municipal or fresh water of up to a very high water hardness, without having a loss in the long term power output of the solar panels.

Abstract: A method for cleaning the glass surface of solar panels which employs the use of highly efficient sequestering agents and allows to replace deionized water with municipal or fresh water of up to a very high water hardness, without having a loss in the long term power output of the solar panels.

Abstract: An aqueous coolant fluid for cutting or machining a semiconductor substrate, comprising at least one organic phosphorous containing acid or salt thereof, at least one polyol; and at least one surfactant, and a method of cutting a silicon ingot or wafer using the coolant fluid.

Abstract: A method for cleaning the glass surface of solar panels which employs the use of highly efficient sequestering agents and allows to replace deionized water with municipal or fresh water of up to a very high water hardness, without having a loss in the long term power output of the solar panels.

Abstract: The disclosure is directed to a processing fluid including at least 50 wt % of an aliphatic hydrocarbon having an average chain length of 8 to 16 carbons, 0.005 wt % to 10.0 wt % of Lewis active components, and not greater than 1.0 wt % water. The Lewis active components includes a Lewis acid and a Lewis base. The processing fluid has a conductivity of at least 10 nS/m and a Cannon viscosity of about 0.5 cp to about 5 cp at 25° C.

Abstract: A method of machining a workpiece includes applying a fluid between a fixed abrasive component and a workpiece, followed by translation of the fixed abrasive component and the workpiece relative to each other. The fluid contains an anti-clogging agent containing a phosphorus-containing organic chemistry.

Abstract: A method for machining a ceramic substrate containing Al, including providing a solution containing a phosphorus compound on the ceramic substrate; and machining the substrate with an abrasive.

Abstract: The disclosure is directed to a processing fluid including at least 50 wt % of an aliphatic hydrocarbon having an average chain length of 8 to 16 carbons, 0.005 wt % to 10.0 wt % of Lewis active components, and not greater than 1.0 wt % water. The Lewis active components includes a Lewis acid and a Lewis base. The processing fluid has a conductivity of at least 10 nS/m and a Cannon viscosity of about 0.5 cp to about 5 cp at 25° C.