Patents by Inventor Douglas L. Keil
Douglas L. Keil has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230230820Abstract: A method for removing residue deposits from a reaction chamber includes supplying a cleaning gas into the reaction chamber via direct delivery from a remote plasma source (RPS). The cleaning gas forms a plurality of gas flow streamlines within the reaction chamber. Each of the streamlines originates at an injection point for receiving the cleaning gas and terminates at a chamber pump port coupled to a fore line for evacuating the cleaning gas. A flow characteristic of the cleaning gas is modified to redirect at least a portion of the gas flow streamlines to circulate in proximity to an inner perimeter of the reaction chamber to remove the residue deposits or to enhance the diffusion of cleaning species to surfaces to be cleaned. The inner perimeter is disposed along one or more vertical surfaces of the reaction chamber that are orthogonal to a horizontal surface including the injection point.Type: ApplicationFiled: June 30, 2021Publication date: July 20, 2023Inventors: Douglas L. KEIL, Alice G. HOLLISTER, Karl Frederick LEESER
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Patent number: 9449795Abstract: A showerhead assembly for a substrate processing system includes a back plate connected to a gas channel. A face plate is connected adjacent to a first surface of the back plate and includes a gas diffusion surface. An electrode is arranged in one of the back plate and the face plate and is connected to one or more conductors. A gas plenum is defined between the back plate and the face plate and is in fluid communication with the gas channel. The back plate and the face plate are made of a non-metallic material.Type: GrantFiled: April 8, 2013Date of Patent: September 20, 2016Assignee: NOVELLUS SYSTEMS, INC.Inventors: Mohamed Sabri, Edward Augustyniak, Douglas L. Keil, Ramkishan Rao Lingampalli, Karl Leeser, Cody Barnett
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Publication number: 20140238608Abstract: A showerhead assembly for a substrate processing system includes a back plate connected to a gas channel. A face plate is connected adjacent to a first surface of the back plate and includes a gas diffusion surface. An electrode is arranged in one of the back plate and the face plate and is connected to one or more conductors. A gas plenum is defined between the back plate and the face plate and is in fluid communication with the gas channel. The back plate and the face plate are made of a non-metallic material.Type: ApplicationFiled: April 8, 2013Publication date: August 28, 2014Applicant: Novellus Systems, Inc.Inventors: Mohamed Sabri, Edward Augustyniak, Douglas L. Keil, Ramkishan Rao Lingampalli, Karl Leeser, Cody Barnett
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Patent number: 8780522Abstract: A method for identifying a signal perturbation characteristic of a dechucking event within a processing chamber of a plasma processing system is provided. The method includes executing a dechucking step within the processing chamber to remove a substrate from a lower electrode, wherein the dechucking step includes generating plasma capable of providing a current to neutralize an electrostatic charge on the substrate. The method also includes employing a probe head to collect a set of characteristic parameter measurements during the dechucking step. The probe head is on a surface of the processing chamber, wherein the surface is within close proximity to a substrate surface. The method further includes comparing the set of characteristic parameter measurements against a pre-defined range. If the set of characteristic parameter measurements is within the pre-defined range, the electrostatic charge is removed from the substrate and the signal perturbation characteristic of the dechucking event is detected.Type: GrantFiled: July 7, 2009Date of Patent: July 15, 2014Assignee: Lam Research CorporationInventors: Jean-Paul Booth, Douglas L. Keil
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Patent number: 8164349Abstract: A method for identifying a stabilized plasma within a processing chamber of a plasma processing system is provided. The method includes executing a strike step within the processing chamber to generate a plasma. The strike step includes applying a substantially high gas pressure within the processing chamber and maintaining a low radio frequency (RF) power within the processing chamber. The method also includes employing a probe head to collect a set of characteristic parameter measurements during the strike step, the probe head being on a surface of the processing chamber, wherein the surface is within close proximity to a substrate surface. The method further includes comparing the set of characteristic parameter measurements against a pre-defined range. If the set of characteristic parameter measurements is within the pre-defined range, the stabilized plasma exists.Type: GrantFiled: July 7, 2009Date of Patent: April 24, 2012Assignee: Lam Research CorporationInventors: Jean-Paul Booth, Douglas L. Keil
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Patent number: 7838086Abstract: A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma.Type: GrantFiled: October 16, 2008Date of Patent: November 23, 2010Assignee: Lam Research CorporationInventors: Douglas L. Keil, Lumin Li, Eric A. Hudson, Reza Sadjadi, Eric H. Lenz, Rajinder Dhindsa, Ji Soo Kim
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Publication number: 20100008015Abstract: A method for identifying a signal perturbation characteristic of a dechucking event within a processing chamber of a plasma processing system is provided. The method includes executing a dechucking step within the processing chamber to remove a substrate from a lower electrode, wherein the dechucking step includes generating plasma capable of providing a current to neutralize an electrostatic charge on the substrate. The method also includes employing a probe head to collect a set of characteristic parameter measurements during the dechucking step. The probe head is on a surface of the processing chamber, wherein the surface is within close proximity to a substrate surface. The method further includes comparing the set of characteristic parameter measurements against a pre-defined range. If the set of characteristic parameter measurements is within the pre-defined range, the electrostatic charge is removed from the substrate and the signal perturbation characteristic of the dechucking event is detected.Type: ApplicationFiled: July 7, 2009Publication date: January 14, 2010Inventors: Jean-Paul Booth, Douglas L. Keil
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Publication number: 20100006417Abstract: A method for identifying a stabilized plasma within a processing chamber of a plasma processing system is provided. The method includes executing a strike step within the processing chamber to generate a plasma. The strike step includes applying a substantially high gas pressure within the processing chamber and maintaining a low radio frequency (RF) power within the processing chamber. The method also includes employing a probe head to collect a set of characteristic parameter measurements during the strike step, the probe head being on a surface of the processing chamber, wherein the surface is within close proximity to a substrate surface. The method further includes comparing the set of characteristic parameter measurements against a pre-defined range. If the set of characteristic parameter measurements is within the pre-defined range, the stabilized plasma exists.Type: ApplicationFiled: July 7, 2009Publication date: January 14, 2010Inventors: Jean-Paul Booth, Douglas L. Keil
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Publication number: 20090041951Abstract: A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma.Type: ApplicationFiled: October 16, 2008Publication date: February 12, 2009Applicant: LAM RESEARCH CORPORATIONInventors: Douglas L. Keil, Lumin Li, Eric A. Hudson, Reza Sadjadi, Eric H. Lenz, Rajinder Dhindsa, Ji Soo Kim
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Patent number: 7455748Abstract: A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.Type: GrantFiled: June 20, 2003Date of Patent: November 25, 2008Assignee: Lam Research CorporationInventors: Douglas L. Keil, Lumin Li, Eric A. Hudson, Reza Sadjadi, Eric H. Lenz, Rajinder Dhindsa, Ji Soo Kim
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Patent number: 7413672Abstract: Methods and apparatus for detecting and/or deriving the absolute values of and/or the relative changes in parameters such as the plasma potential and the ion flux using a Planar Ion Flux (PIF) probing arrangement are disclosed. The detected and/or derived values are then employed to control plasma processing processes.Type: GrantFiled: April 4, 2006Date of Patent: August 19, 2008Assignee: Lam Research CorporationInventor: Douglas L. Keil
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Patent number: 7347915Abstract: A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.Type: GrantFiled: January 5, 2006Date of Patent: March 25, 2008Assignee: LAM Research CorporationInventors: Douglas L. Keil, Wan-Lin Chen, Eric A. Hudson, S. M. Reza Sadjadi, Mark H. Wilcoxson, Andrew D. Bailey, III
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Patent number: 7022611Abstract: A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.Type: GrantFiled: April 28, 2003Date of Patent: April 4, 2006Assignee: Lam Research CorporationInventors: Douglas L. Keil, Wan-Lin Chen, Eric A. Hudson, S. M. Reza Sadjadi, Mark H. Wilcoxson, Andrew D. Bailey, III
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Patent number: 6268260Abstract: An improved method of forming a memory cell capacitor plate is disclosed. The method of forming a memory cell capacitor plate comprises the steps of depositing a sacrificial layer and forming an opening in the sacrificial layer. Then an electrode material layer which includes a substantially conductive material that remains substantially conductive upon exposure to oxygen is deposited over a top surface of the sacrificial layer and at least partially filling the opening. The method continues with removing a portion of the electrode material layer down to at least about a level of the sacrificial layer's top surface to define a top surface of the memory cell capacitor plate, followed by removal of the sacrificial layer.Type: GrantFiled: March 31, 1999Date of Patent: July 31, 2001Assignee: Lam Research CorporationInventor: Douglas L. Keil