Patents by Inventor Douglas R. Bowman

Douglas R. Bowman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4948741
    Abstract: A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.
    Type: Grant
    Filed: February 23, 1989
    Date of Patent: August 14, 1990
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Robert B. Hammond, Douglas R. Bowman
  • Patent number: 4821091
    Abstract: A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.
    Type: Grant
    Filed: January 21, 1988
    Date of Patent: April 11, 1989
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Robert B. Hammond, Douglas R. Bowman