Abstract: A conductive network fabrication process is provided and includes filling a hole formed in a substrate with dielectric material, laminating films of the dielectric material on either side of the substrate, opening a through-hole through the dielectric material at the hole, depositing a conformal coating of dielectric material onto an interior surface of the through-hole and executing seed layer metallization onto the conformal coating in the through-hole to form a seed layer extending continuously along an entire length of the through-hole.

Abstract: A conductive network fabrication process is provided and includes filling a hole formed in a substrate with dielectric material, laminating films of the dielectric material on either side of the substrate, opening a through-hole through the dielectric material at the hole, depositing a conformal coating of dielectric material onto an interior surface of the through-hole and executing seed layer metallization onto the conformal coating in the through-hole to form a seed layer extending continuously along an entire length of the through-hole.

Abstract: A conductive network fabrication process is provided and includes filling a hole formed in a substrate with dielectric material, laminating films of the dielectric material on either side of the substrate, opening a through-hole through the dielectric material at the hole, depositing a conformal coating of dielectric material onto an interior surface of the through-hole and executing seed layer metallization onto the conformal coating in the through-hole to form a seed layer extending continuously along an entire length of the through-hole.

Abstract: Integrating a semiconductor component with a substrate through a low loss interconnection formed through adaptive patterning includes forming a cavity in the substrate, placing the semiconductor component therein, filling a gap between the semiconductor component and substrate with a fill of same or similar dielectric constant as that of the substrate and adaptively patterning a low loss interconnection on the fill and extending between the contacts of the semiconductor component and the electrical traces on the substrate. The contacts and leads are located and adjoined using an adaptive patterning technique that places and forms a low loss radio frequency transmission line that compensates for any misalignment between the semiconductor component contacts and the substrate leads.

Abstract: Integrating a semiconductor component with a substrate through a low loss interconnection formed through adaptive patterning includes forming a cavity in the substrate, placing the semiconductor component therein, filling a gap between the semiconductor component and substrate with a fill of same or similar dielectric constant as that of the substrate and adaptively patterning a low loss interconnection on the fill and extending between the contacts of the semiconductor component and the electrical traces on the substrate. The contacts and leads are located and adjoined using an adaptive patterning technique that places and forms a low loss radio frequency transmission line that compensates for any misalignment between the semiconductor component contacts and the substrate leads.