Abstract: Embodiments of the invention describe electrical contacts for integrated circuits and methods of forming using gas cluster ion beam (GCIB) processing. The electrical contacts contain a fused metal-containing layer formed by exposing a patterned structure to a gas cluster ion beam containing a transition metal precursor or a rare earth metal precursor.

Abstract: Embodiments of the invention describe electrical contacts for integrated circuits and methods of forming using gas cluster ion beam (GCIB) processing. The electrical contacts contain a fused metal-containing layer formed by exposing a patterned structure to a gas cluster ion beam containing a transition metal precursor or a rare earth metal precursor.

Abstract: A process is provided for substrate ashing following the etching of features in a low dielectric constant (low-k) layer. The low-k layer can include ultra-low-k material, or a porous low-k material. The process may be configured to remove etch byproducts while preserving feature critical dimension. The ashing process comprises the use of a nitrogen and hydrogen containing chemistry with a passivation chemistry that includes oxygen, such as O2, CO, or CO2, or any combination thereof.

Abstract: The present invention comprises an aluminum base material 2 constituting the plasma processing chamber of the plasma processing apparatus, a bonding layer 3 deposited on the base material consisting of a transition metal or transition metal alloy that modifies the difference in thermal expansion coefficient of the base material and the material constituting a plasma contact surface, and the plasma contact surface 1 formed of a material selected from a group consisting of La2O3, LaAlO3, MgLaAl11O19, and a mixture of La2O3 and Al2O3 being a metal oxide including at least La and O deposited on the bonding layer 3 via a thermal spray process.

Abstract: The present invention comprises an aluminum base material constituting the plasma processing chamber of the plasma processing apparatus, a bonding layer 3 deposited on the base material consisting of a transition metal or transition metal alloy that modifies the difference in thermal expansion efficient of the base material and the material constituting plasma contact surface, and the plasma contact surface 1 formed a material selected from a group consisting of La2O3, LaAlO3, MgLaAl11O19, and a mixture of La2O3 and Al2O3 being a metal oxide including at least La and O deposited on the bonding layer 3 via a thermal spray process.