Patents by Inventor Douglas Van Den Broeke
Douglas Van Den Broeke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150095858Abstract: A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process. In embodiments, the invention provides a double exposure lithography method which trims (i.e., removes) unwanted SB residues from the substrate, that is suitable for use, for example, when printing 65 nm or 45 nm node devices or less. According to certain aspects, the present invention provides the ability to utilize large SBs due to the mutual trimming of SBs that results from the process of the present invention. Specifically, in the given process, both the H-mask and the V-mask contain circuit features and SBs, but they are in different corresponding orientations, and therefore, there is a mutual SB trimming for the H-mask and V-mask during the two exposures.Type: ApplicationFiled: December 8, 2014Publication date: April 2, 2015Inventors: Jang Fung CHEN, Duan-Fu Stephen HSU, Douglas VAN DEN BROEKE
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Patent number: 8910091Abstract: A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process is disclosed. The method includes defining an initial H-mask and an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask and vertical critical features in the V-mask; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.Type: GrantFiled: February 21, 2012Date of Patent: December 9, 2014Assignee: ASML Netherlands B.V.Inventors: Jang Fung Chen, Duan-Fu Stephen Hsu, Douglas Van Den Broeke
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Patent number: 8632930Abstract: A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.Type: GrantFiled: June 7, 2011Date of Patent: January 21, 2014Assignee: ASML Masktools B.V.Inventors: Duan-Fu Stephen Hsu, Sangbong Park, Douglas Van Den Broeke, Jang Fung Chen
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Patent number: 8495529Abstract: A method of generating a mask having optical proximity correction features.Type: GrantFiled: November 5, 2009Date of Patent: July 23, 2013Assignee: ASML Masktools B.V.Inventors: Douglas van Den Broeke, Jang Fung Chen
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Publication number: 20130182940Abstract: A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.Type: ApplicationFiled: March 5, 2013Publication date: July 18, 2013Applicant: ASML NETHERLANDS B.V.Inventors: Duan-Fu Stephen Hsu, Jung Chul Park, Douglas Van Den Broeke, Jang Fung Chen
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Patent number: 8391605Abstract: A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.Type: GrantFiled: January 25, 2012Date of Patent: March 5, 2013Assignee: ASML Masktools B.V.Inventors: Duan-Fu Stephen Hsu, Jung Chul Park, Douglas Van Den Broeke, Jang Fung Chen
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Publication number: 20130055171Abstract: A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process is disclosed. The method includes defining an initial H-mask and an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask and vertical critical features in the V-mask; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.Type: ApplicationFiled: February 21, 2012Publication date: February 28, 2013Applicant: ASML MaskTools B.V.Inventors: Jang Fung Chen, Duan-Fu Stephen Hsu, Douglas Van Den Broeke
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Publication number: 20120122023Abstract: A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.Type: ApplicationFiled: January 25, 2012Publication date: May 17, 2012Applicant: ASML MaskTools B.V.Inventors: Duan-Fu Stephen Hsu, Jung Chul Park, Douglas Van Den Broeke, Jang Fung Chen
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Patent number: 8132130Abstract: A method for forming exposure masks for imaging a target pattern having features to be imaged on a substrate in a multi-exposure process. The method includes the steps of generating a set of decomposition rules defining whether a given feature of the target pattern is assigned to a first exposure mask or a second exposure mask; applying the decomposition rules to each of the features in the target pattern so as to assign each of the features in the target pattern to one of the first exposure mask or second exposure mask; and generating the first exposure mask and the second exposure mask containing the respective features assigned to each mask.Type: GrantFiled: June 22, 2006Date of Patent: March 6, 2012Assignee: ASML Masktools B.V.Inventors: Jang Fung Chen, Duan-Fu Stephen Hsu, Douglas Van Den Broeke, Thomas Laidig
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Patent number: 8122391Abstract: A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process. The method includes the steps of: defining an initial H-mask corresponding to the target pattern; defining an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask having a width which is less than a predetermined critical width; identifying vertical critical features in the V-mask having a width which is less than a predetermined critical width; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.Type: GrantFiled: January 21, 2010Date of Patent: February 21, 2012Assignee: ASML Masktools B.V.Inventors: Jang Fung Chen, Duan-Fu Stephen Hsu, Douglas Van Den Broeke
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Patent number: 8111921Abstract: A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.Type: GrantFiled: September 13, 2007Date of Patent: February 7, 2012Assignee: ASML Masktools B.V.Inventors: Duan-Fu Stephen Hsu, Jung Chul Park, Douglas Van Den Broeke, Jang Fung Chen
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Patent number: 8039180Abstract: A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding—the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.Type: GrantFiled: February 22, 2011Date of Patent: October 18, 2011Assignee: ASML Masktools B.V.Inventors: Thomas Laidig, Kurt E. Wampler, Douglas Van Den Broeke, Jang Fung Chen
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Patent number: 8040573Abstract: A method of determining calibration test patterns to be utilized to calibrate a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining design rules associated with a given imaging process; defining a model equation representing the imaging performance of the optical imaging system; determining a boundary of an imaging signal space based on the design rules; selecting calibration patterns based on the boundary of the imaging signal space such that the calibration patterns are on the boundary or within the boundary of the imaging signal space; and storing the selected calibration test patterns, where the calibration test patterns are utilized to calibrate the model for simulating the imaging performance of the optical imaging system.Type: GrantFiled: August 14, 2007Date of Patent: October 18, 2011Assignee: ASML Masktools B.V.Inventors: Xuelong Shi, Jang Fung Chen, Douglas Van Den Broeke
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Publication number: 20110236808Abstract: A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.Type: ApplicationFiled: June 7, 2011Publication date: September 29, 2011Applicant: ASML Mask Tools B.V.Inventors: Duan-Fu Stephen Hsu, Sangbong Park, Douglas Van Den Broeke, Jang Fung Chen
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Patent number: 7998355Abstract: A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of depositing a layer of transmissive material having a predefined percentage transmission on a substrate; depositing a layer of opaque material on the transmissive material; etching a portion of the substrate, the substrate being etched to a depth based on an etching selectivity between the transmissive layer and the substrate; exposing a portion of the transmissive layer by etching the opaque material; etching the exposed portion of the transmissive layer so as to expose an upper surface of the substrate; where the exposed portions of the substrate and the etched portions of the substrate exhibit a predefined phase shift relative to one another with respect to an illumination signal.Type: GrantFiled: July 6, 2007Date of Patent: August 16, 2011Assignee: ASML Masktools B.V.Inventors: Douglas Van Den Broeke, Kurt E. Wampler, Jang Fung Chen
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Patent number: 7981576Abstract: A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.Type: GrantFiled: September 24, 2010Date of Patent: July 19, 2011Assignee: ASML Masktools B.V.Inventors: Duan-Fu Stephen Hsu, Sangbong Park, Douglas Van Den Broeke, Jang Fung Chen
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Publication number: 20110143268Abstract: A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding- the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.Type: ApplicationFiled: February 22, 2011Publication date: June 16, 2011Applicant: ASML MaskTools B.V.Inventors: Thomas Laidig, Kurt E. Wampler, Douglas Van Den Broeke, Jang Fung Chen
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Patent number: 7892703Abstract: A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of obtaining data representing the plurality of features; and forming at least one of the plurality of features by etching a substrate to form a mesa and depositing a chrome layer over the entire upper surface of the mesa, where said mesa has a predetermined height.Type: GrantFiled: August 10, 2006Date of Patent: February 22, 2011Assignee: ASML Masktools B.V.Inventors: Jang Fung Chen, Duan-Fu Stephen Hsu, Douglas Van Den Broeke, Jung Chul Park, Thomas Laidig
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Patent number: 7892707Abstract: A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding—the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.Type: GrantFiled: January 8, 2009Date of Patent: February 22, 2011Assignee: ASML Masktools B.V.Inventors: Thomas Laidig, Kurt E. Wampler, Douglas Van Den Broeke, Jang Fung Chen
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Publication number: 20110014552Abstract: A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.Type: ApplicationFiled: September 24, 2010Publication date: January 20, 2011Applicant: ASML Mask Tools B.V.Inventors: Duan-Fu Stephen Hsu, Sangbong Park, Douglas Van Den Broeke, Jang Fung Chen