Abstract: Devices, methods, and techniques for frequency-dependent optical switching are provided. In one embodiment, a device includes a substrate, a first optical-field confining structure located on the substrate, a second optical-field confining structure located on the substrate, and a composite structure located between the first and second optical-field confining structures. The second optical-field confining structure may be spaced apart from the first optical-field confining structure. The composite structure may include an embedding structure with a surface to receive photons and multiple quantum structures located in the embedding structure.

Abstract: A device to detect a magnetic field is disclosed. The device includes a first set of nano-magnets and a second set of nano-magnets. The first set of nano-magnets may be operable to transmit a radio frequency (RF) signal to a target, and a second set of nano-magnets may be operable to induce an electrical signal in response to a magnetic resonance signal generated from the target.

Abstract: Apparatuses capable of and techniques for detecting the visible light spectrum are provided.

Abstract: Magnetic field detection techniques and devices are provided. In one embodiment, a device configured to detect a magnetic field includes a first set of nano-magnets and a second set of nano-magnets. The first set of nano-magnets is operable to induce a RF magnetic field, and the second set of nano-magnets is operable to induce a first electrical signal in response to magnetic resonance signals caused by the RF magnetic field.

Abstract: Semiconductor devices having strong excitonic binding are disclosed. In some embodiments, a semiconductor device includes at least one active layer composed of a first compound, and at least one barrier layer composed of a second compound and disposed on at least one surface of the at least one active layer. An energy band gap of the at least one barrier layer is wider than energy band gap of the at least one active layer, and the first and/or second compounds are selected to strengthen an excitonic binding between an electron and a hole in the at least one active layer.

Abstract: A device that includes a signal generating unit having a surface that can receive photons, a first metal structure located on the surface of the signal generating unit, and a second metal structure located on the surface of the signal generating unit. The second metal structure being spaced apart from the first metal structure.

Abstract: Apparatuses capable of and techniques for detecting the visible light spectrum are provided.

Abstract: Magnetic heads for perpendicular magnetic recording on magnetic recording media are provided.

Abstract: Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed.

Abstract: Implementations of quantum well photovoltaic devices are provided. In one embodiment, a photovoltaic device includes an active layer that includes a first barrier layer, a well layer located on the first barrier layer and made of a nitride semiconductor, and a second barrier layer located on the well layer. A metal layer is located adjacent to the active layer.

Abstract: Piezoelectric actuators having a piezoelectric layer in which a cantilever portion is formed are disclosed. In one embodiment, an actuator includes a support layer and a piezoelectric layer. The piezoelectric layer may include a supported portion formed on the support layer and a cantilever portion which extends beyond the support layer.

Abstract: Devices, methods, and techniques for frequency-dependent optical switching are provided. In one embodiment, a device includes a substrate, a first and a second optical-field confining structures located on the substrate, and a quantum structure disposed between the first and the second optical-field confining structures. The first optical-field confining structure may include a surface to receive photons. The second optical-field confining structure may be spaced apart from the first optical-field confining structure. The first and the second optical-field confining structures may be configured to substantially confine therebetween an optical field of the photons.

Abstract: Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed.

Abstract: Magnetic heads for perpendicular magnetic recording on magnetic recording media are provided.

Abstract: Optoelectronic devices are provided. In one embodiment, a device may include a first conductivity type cladding layer including a first barrier layer, an active layer formed on the first conductivity-type cladding layer, the active layer including a well layer made of a nitride semiconductor, and a second conductivity-type cladding layer formed on the active layer and including a second barrier layer. The active layer is positioned between and adjacent to the first barrier layer and the second barrier layer.

Abstract: Magnetic heads for perpendicular magnetic recording on magnetic recording media are provided.

Abstract: A device to detect a magnetic field is disclosed. The device includes a first set of nano-magnets and a second set of nano-magnets. The first set of nano-magnets may be operable to transmit a radio frequency (RF) signal to a target, and a second set of nano-magnets may be operable to induce an electrical signal in response to a magnetic resonance signal generated from the target.

Abstract: A waveguide receives a wave transmitted from an external power source and to guide the wave to reach within a width of a rectenna. The waveguide may include a negative refractive index medium and/or a surface plasmon medium.

Abstract: Techniques for determining and a computing device configured to determine a quantum Karnaugh map through decomposing a quantum circuit into a multiple number of sub-circuits are provided. Also, techniques for obtaining and a computing device configured to obtain a quantum circuit which includes the minimum number of gates among possible quantum circuits corresponding to a quantum Karnaugh map are also provided.

Abstract: Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.