Patents by Inventor Doyle E. Bennett
Doyle E. Bennett has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240014080Abstract: A method of polishing a substrate includes polishing a conductive layer on the substrate at a polishing station, monitoring the layer with an in-situ eddy current monitoring system to generate a plurality of measured signals values for a plurality of different locations on the layer, generating thickness measurements the locations, and detecting a polishing endpoint or modifying a polishing parameter based on the thickness measurements. The conductive layer is formed of a first material having a first conductivity. Generating includes calculating initial thickness values based on the plurality of measured signals values and processing the initial thickness values through a neural network that was trained using training data acquired by measuring calibration substrates having a conductive layer formed of a second material having a second conductivity that is lower than the first conductivity to generated adjusted thickness values.Type: ApplicationFiled: September 21, 2023Publication date: January 11, 2024Inventors: Kun Xu, Kiran Lall Shrestha, Doyle E. Bennett, David Maxwell Gage, Benjamin Cherian, Jun Qian, Harry Q. Lee
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Patent number: 11791224Abstract: A method of polishing a substrate includes polishing a conductive layer on the substrate at a polishing station, monitoring the layer with an in-situ eddy current monitoring system to generate a plurality of measured signals values for a plurality of different locations on the layer, generating thickness measurements the locations, and detecting a polishing endpoint or modifying a polishing parameter based on the thickness measurements. The conductive layer is formed of a first material having a first conductivity. Generating includes calculating initial thickness values based on the plurality of measured signals values and processing the initial thickness values through a neural network that was trained using training data acquired by measuring calibration substrates having a conductive layer formed of a second material having a second conductivity that is lower than the first conductivity to generated adjusted thickness values.Type: GrantFiled: May 11, 2021Date of Patent: October 17, 2023Assignee: Applied Materials, Inc.Inventors: Kun Xu, Kiran Lall Shrestha, Doyle E. Bennett, David Maxwell Gage, Benjamin Cherian, Jun Qian, Harry Q. Lee
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Publication number: 20230290691Abstract: A method of polishing a substrate includes polishing a conductive layer on the substrate at a polishing station, monitoring the layer with an in-situ eddy current monitoring system to generate a plurality of measured signals values for a plurality of different locations on the layer, generating thickness measurements the locations, and detecting a polishing endpoint or modifying a polishing parameter based on the thickness measurements. The conductive layer is formed of a first material having a first conductivity. Generating includes calculating initial thickness values based on the plurality of measured signals values and processing the initial thickness values through a neural network that was trained using training data acquired by measuring calibration substrates having a conductive layer formed of a second material having a second conductivity that is lower than the first conductivity to generated adjusted thickness values.Type: ApplicationFiled: May 22, 2023Publication date: September 14, 2023Inventors: Kun Xu, Kiran Lall Shrestha, Doyle E. Bennett, David Maxwell Gage, Benjamin Cherian, Jun Qian, Harry Q. Lee
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Patent number: 11658078Abstract: A method of polishing a substrate includes polishing a conductive layer on the substrate at a polishing station, monitoring the layer with an in-situ eddy current monitoring system to generate a plurality of measured signals values for a plurality of different locations on the layer, generating thickness measurements the locations, and detecting a polishing endpoint or modifying a polishing parameter based on the thickness measurements. The conductive layer is formed of a first material having a first conductivity. Generating includes calculating initial thickness values based on the plurality of measured signals values and processing the initial thickness values through a neural network that was trained using training data acquired by measuring calibration substrates having a conductive layer formed of a second material having a second conductivity that is lower than the first conductivity to generated adjusted thickness values.Type: GrantFiled: May 11, 2021Date of Patent: May 23, 2023Assignee: Applied Materials, Inc.Inventors: Kun Xu, Kiran Lall Shrestha, Doyle E. Bennett, David Maxwell Gage, Benjamin Cherian, Jun Qian, Harry Q. Lee
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Publication number: 20210379723Abstract: A method of compensating for a contribution of conductivity of the semiconductor wafer to a measured trace by an in-situ electromagnetic induction monitoring system includes storing or generating a modified reference trace. The modified reference trace represents measurements of a bare doped reference semiconductor wafer by an in-situ electromagnetic induction monitoring system as modified by a neutral network. The substrate is monitored with an in-situ electromagnetic induction monitoring system to generate a measured trace that depends on a thickness of the conductive layer, and at least a portion of the measured trace is applied to a neural network to generate a modified measured trace. An adjusted trace is generated, including subtracting the modified reference trace from the modified measured trace.Type: ApplicationFiled: September 26, 2018Publication date: December 9, 2021Inventors: Kun Xu, David Maxwell Gage, Harry Q. Lee, Denis Anatolyevich Ivanov, Hassan G. Iravani, Doyle E. Bennett, Kiran Lall Shrestha
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Publication number: 20210358819Abstract: A method of polishing a substrate includes polishing a conductive layer on the substrate at a polishing station, monitoring the layer with an in-situ eddy current monitoring system to generate a plurality of measured signals values for a plurality of different locations on the layer, generating thickness measurements the locations, and detecting a polishing endpoint or modifying a polishing parameter based on the thickness measurements. The conductive layer is formed of a first material having a first conductivity. Generating includes calculating initial thickness values based on the plurality of measured signals values and processing the initial thickness values through a neural network that was trained using training data acquired by measuring calibration substrates having a conductive layer formed of a second material having a second conductivity that is lower than the first conductivity to generated adjusted thickness values.Type: ApplicationFiled: May 11, 2021Publication date: November 18, 2021Inventors: Kun Xu, Kiran Lall Shrestha, Doyle E. Bennett, David Maxwell Gage, Benjamin Cherian, Jun Qian, Harry Q. Lee
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Publication number: 20210354265Abstract: A method of polishing a substrate includes polishing a conductive layer on the substrate at a polishing station, monitoring the layer with an in-situ eddy current monitoring system to generate a plurality of measured signals values for a plurality of different locations on the layer, generating thickness measurements the locations, and detecting a polishing endpoint or modifying a polishing parameter based on the thickness measurements. The conductive layer is formed of a first material having a first conductivity. Generating includes calculating initial thickness values based on the plurality of measured signals values and processing the initial thickness values through a neural network that was trained using training data acquired by measuring calibration substrates having a conductive layer formed of a second material having a second conductivity that is lower than the first conductivity to generated adjusted thickness values.Type: ApplicationFiled: May 11, 2021Publication date: November 18, 2021Inventors: Kun Xu, Kiran Lall Shrestha, Doyle E. Bennett, David Maxwell Gage, Benjamin Cherian, Jun Qian, Harry Q. Lee
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Patent number: 10556315Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.Type: GrantFiled: January 4, 2019Date of Patent: February 11, 2020Assignee: Applied Materials, Inc.Inventors: Kun Xu, Shih-Haur Shen, Boguslaw A. Swedek, Ingemar Carlsson, Doyle E. Bennett, Wen-Chiang Tu, Hassan G. Iravani, Tzu-Yu Liu
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Publication number: 20190134775Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.Type: ApplicationFiled: January 4, 2019Publication date: May 9, 2019Inventors: Kun Xu, Shih-Haur Shen, Boguslaw A. Swedek, Ingemar Carlsson, Doyle E. Bennett, Wen-Chiang Tu, Hassan G. Iravani, Tzu-Yu Liu
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Patent number: 10207386Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.Type: GrantFiled: February 17, 2016Date of Patent: February 19, 2019Assignee: Applied Materials, Inc.Inventors: Kun Xu, Shih-Haur Shen, Boguslaw A. Swedek, Ingemar Carlsson, Doyle E. Bennett, Wen-Chiang Tu, Hassan G. Iravani, Tzu-Yu Liu
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Patent number: 9636797Abstract: Among other things, a method of controlling polishing during a polishing process is described. The method includes receiving a measurement of a thickness, thick(t), of a conductive layer of a substrate undergoing polishing from an in-situ monitoring system at a time t; receiving a measured temperature, T(t), associated with the conductive layer at the time t; calculating resistivity ?T of the conductive layer at the measured temperature T(t); adjusting the measurement of the thickness using the calculated resistivity ?T to generate an adjusted measured thickness; and detecting a polishing endpoint or an adjustment for a polishing parameter based on the adjusted measured thickness.Type: GrantFiled: February 12, 2014Date of Patent: May 2, 2017Assignee: Applied Materials, Inc.Inventors: Kun Xu, Ingemar Carlsson, Boguslaw A. Swedek, Doyle E. Bennett, Shih-Haur Shen, Hassan G Iravani, Wen-Chiang Tu, Tzu-Yu Liu
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Publication number: 20160158908Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.Type: ApplicationFiled: February 17, 2016Publication date: June 9, 2016Applicant: Applied Materials, Inc.Inventors: Kun Xu, Shih-Haur Shen, Boguslaw A. Swedek, Ingemar Carlsson, Doyle E. Bennett, Wen-Chiang Tu, Hassan G. Iravani, Tzu-Yu Liu
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Publication number: 20160101497Abstract: A polishing apparatus includes a plurality of stations supported on a platform, the plurality of stations including at least two polishing stations and a transfer station, each polishing station including a platen to support a polishing pad, a plurality of carrier heads suspended from and movable along a track such that each polishing station is selectively positionable at the stations, and a controller configured to control motion of the carrier heads along the track such that during polishing at each polishing station only a single carrier head is positioned in the polishing station.Type: ApplicationFiled: December 17, 2015Publication date: April 14, 2016Applicant: Applied Materials, Inc.Inventors: Jeffrey Drue David, Boguslaw A. Swedek, Doyle E. Bennett, Thomas H. Osterheld, Benjamin Cherian, Dominic J. Benvegnu, Harry Q. Lee, Allen L. D'Ambra, Jagan Rangarajan
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Patent number: 9281253Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.Type: GrantFiled: October 29, 2013Date of Patent: March 8, 2016Assignee: Applied Materials, Inc.Inventors: Kun Xu, Shih-Haur Shen, Boguslaw A. Swedek, Ingemar Carlsson, Doyle E. Bennett, Wen-Chiang Tu, Hassan G. Iravani, Tzu-Yu Liu
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Patent number: 9275917Abstract: In one aspect, a method of controlling polishing includes receiving a measurement of an initial thickness of a conductive film on a first substrate prior to polishing the first substrate from an in-line or stand-alone monitoring system, polishing one or more substrates in a polishing system, the one or more substrates including the first substrate, during polishing of the one or more substrates, monitoring the one or more substrates with an eddy current monitoring system to generate a first signal, determining a starting value of the first signal for a start of polishing of the first substrate, determining a gain based on the starting value and the measurement of the initial thickness, for at least a portion of the first signal collected during polishing of at least one substrate of the one or more substrates, and calculating a second signal based on the first signal and the gain.Type: GrantFiled: October 29, 2013Date of Patent: March 1, 2016Assignee: Applied Materials, Inc.Inventors: Kun Xu, Shih-Haur Shen, Boguslaw A. Swedek, Ingemar Carlsson, Doyle E. Bennett, Wen-Chiang Tu, Hassan G. Iravani, Tzu-Yu Liu
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Patent number: 9227293Abstract: A polishing apparatus includes a plurality of stations supported on a platform, the plurality of stations including at least two polishing stations and a transfer station, each polishing station including a platen to support a polishing pad, a plurality of carrier heads suspended from and movable along a track such that each polishing station is selectively positionable at the stations, and a controller configured to control motion of the carrier heads along the track such that during polishing at each polishing station only a single carrier head is positioned in the polishing station.Type: GrantFiled: March 8, 2013Date of Patent: January 5, 2016Assignee: Applied Materials, Inc.Inventors: Jeffrey Drue David, Boguslaw A. Swedek, Doyle E. Bennett, Thomas H. Osterheld, Benjamin Cherian, Dominic J. Benvegnu, Harry Q. Lee, Allen L. D'Ambra, Jagan Rangarajan
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Patent number: 9221147Abstract: A method of controlling polishing includes polishing a substrate, monitoring the substrate during polishing with an in-situ spectrographic monitoring system to generate a sequence of measured spectra, selecting less than all of the measured spectra to generate a sequence of selected spectra, generating a sequence of values from the sequence of selected spectra, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of values.Type: GrantFiled: October 23, 2012Date of Patent: December 29, 2015Assignee: Applied Materials, Inc.Inventors: Jun Qian, Sivakumar Dhandapani, Benjamin Cherian, Thomas H. Osterheld, Jeffrey Drue David, Gregory E. Menk, Boguslaw A. Swedek, Doyle E. Bennett
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Patent number: 9205527Abstract: A method of chemical mechanical polishing a substrate includes polishing a layer on the substrate at a polishing station, monitoring the layer during polishing at the polishing station with an in-situ monitoring system, the in-situ monitoring system monitoring an elongated region and generating a measured signal, computing an angle between a primary axis of the elongated region and a tangent to an edge of the substrate, modifying the measured signal based on the angle to generate a modified signal, and at least one of detecting a polishing endpoint or modifying a polishing parameter based on the modified signal.Type: GrantFiled: March 8, 2013Date of Patent: December 8, 2015Assignee: Applied Materials, Inc.Inventors: Kun Xu, Shih-Haur Shen, Tzu-Yu Liu, Ingemar Carlsson, Hassan G. Iravani, Boguslaw A. Swedek, Wen-Chiang Tu, Doyle E. Bennett
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Publication number: 20150224623Abstract: Among other things, a method of controlling polishing during a polishing process is described. The method includes receiving a measurement of a thickness, thick(t), of a conductive layer of a substrate undergoing polishing from an in-situ monitoring system at a time t; receiving a measured temperature, T(t), associated with the conductive layer at the time t; calculating resistivity ?T of the conductive layer at the measured temperature T(t); adjusting the measurement of the thickness using the calculated resistivity ?T to generate an adjusted measured thickness; and detecting a polishing endpoint or an adjustment for a polishing parameter based on the adjusted measured thickness.Type: ApplicationFiled: February 12, 2014Publication date: August 13, 2015Applicant: Applied Materials, Inc.Inventors: Kun Xu, Ingemar Carlsson, Boguslaw A. Swedek, Doyle E. Bennett, Shih-Haur Shen, Hassan G. Iravani, Wen-Chiang Tu, Tzu-Yu Liu
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Patent number: 9056383Abstract: A method of operating a polishing system includes polishing a substrate at a polishing station, the substrate held by a carrier head during polishing, transporting the substrate to an in-sequence optical metrology system positioned between the polishing station and another polishing station or a transfer station, measuring a plurality of spectra reflected from the substrate with a probe of the optical metrology system while moving the carrier head to cause the probe to traverse a path across the substrate and while the probe remains stationary, the path across the substrate comprising either a plurality of concentric circles or a plurality of substantially radially aligned arcuate segments, and adjusting a polishing endpoint or a polishing parameter of the polishing system based on one or more characterizing values generated based on at least some of the plurality of spectra.Type: GrantFiled: February 26, 2013Date of Patent: June 16, 2015Assignee: Applied Materials, Inc.Inventors: Jeffrey Drue David, Benjamin Cherian, Dominic J. Benvegnu, Boguslaw A. Swedek, Thomas H. Osterheld, Jun Qian, Thomas Li, Doyle E. Bennett, David J. Lischka, Steven M. Zuniga