Abstract: A physically-unclonable-function (PUF) circuit and the control method thereof are provided, and the control method can be applied to the magnetoresistive device. The control method includes providing a first energy to a plurality of magnetic-tunnel junction (MTJ) devices after initializing the MTJ devices to a resistance state, and determining whether the hamming weight of at least one of the MTJ devices which has a predetermined resistance state is within a predetermined range or not.

Abstract: A physically-unclonable-function (PUF) circuit and the control method thereof are provided, and the control method can be applied to the magnetoresistive device. The control method includes providing a first energy to a plurality of magnetic-tunnel junction (MTJ) devices after initializing the MTJ devices to a resistance state, and determining whether the hamming weight of at least one of the MTJ devices which has a predetermined resistance state is within a predetermined range or not.

Abstract: A keyboard type input device used in conjunction with a wristwatch or a portable telephone has multiple key positions provided as character entry keys. Each key corresponds to one key in the selected row of the conventional QWERTY keyboard. A second set of control buttons provide for the selection of which row of a conventional QWERTY keyboard are represented by the character keys in addition to other functions such as case shift, and alpha-numerical control functions. A selected row is shown on a display, as visual feedback. Alternatively the keys are implemented as LCDs with pressure sensors and the characters of the selected row are displayed directly on the corresponding key positions. The keyboard finds particular use in portable devices as it demands less space than traditional keyboards.

Abstract: A phase change memory device and a method of forming the same are provided. The phase change memory device includes a conducting electrode in a dielectric layer, a bottom electrode over the conducting electrode, a phase change layer over the bottom electrode, and a top electrode over the phase change layer. The phase change memory device may further include a heat sink layer between the phase change layer and the top electrode. The resistivities of the bottom electrode and the top electrode are preferably greater than the resistivity of the phase change material in the crystalline state.

Abstract: A semiconductor structure includes a substrate; an isolation structure in the substrate, wherein the isolation structure defines a region therein; a first semiconductor region having at least a portion in the region defined by the isolation structure, wherein the first semiconductor region is of a first conductivity type; a second semiconductor region on the first semiconductor region, wherein the second semiconductor region is of a second conductivity type opposite the first conductivity type; and a third semiconductor region of the first conductivity type on the second semiconductor region, wherein the third semiconductor region has at least a portion higher than a top surface of the isolation structure.

Abstract: A phase change memory is provided. The method includes forming contact plugs in a first dielectric layer. A second dielectric layer is formed overlying the first dielectric layer and a trench formed therein exposing portions of the contact plugs. A metal layer is formed over surfaces of the trench. One or more heaters are formed from the metal layer such that each heater is formed along one or more sidewalls of the trench, wherein the portion of the heater along the sidewalls does not include a corner region of adjacent sidewalls. The trench is filled with a third dielectric layer, and a fourth dielectric layer is formed over the third dielectric layer. Trenches are formed in the fourth dielectric layer and filled with a phase change material. An electrode is formed over the phase change material.

Abstract: An integrated circuit structure for isolating substrate noise and a method of forming the same are provided. In the preferred embodiment of the present invention, a semi-insulating region is formed using proton bombardment in a substrate between a first circuit region and a second circuit region. Two guard rings are formed along the semi-insulating region, each on a side. A backside semi-insulating region is formed through proton bombardment from the back surface of the substrate into the substrate. The backside semi-insulating region is preferably connected with the semi-insulating region. A grounded guard layer is preferably formed on the backside semi-insulating region.

Abstract: An integrated circuit structure for isolating substrate noise and a method of forming the same are provided. In the preferred embodiment of the present invention, a semi-insulating region is formed using proton bombardment in a substrate between a first circuit region and a second circuit region. Two guard rings are formed along the semi-insulating region, each on a side. A backside semi-insulating region is formed through proton bombardment from the back surface of the substrate into the substrate. The backside semi-insulating region is preferably connected with the semi-insulating region. A grounded guard layer is preferably formed on the backside semi-insulating region.

Abstract: A keyboard type input device used in conjunction with a wristwatch or a portable telephone has multiple key positions provided as character entry keys. Each key corresponds to one key in the selected row of the conventional QWERTY keyboard. A second set of control buttons provide for the selection of which row of a conventional QWERTY keyboard are represented by the character keys in addition to other functions such as case shift, and alpha-numerical control functions. A selected row is shown on a display, as visual feedback. Alternatively the keys are implemented as LCDs with pressure sensors and the characters of the selected row are displayed directly on the corresponding key positions. The keyboard finds particular use in portable devices as it demands less space than traditional keyboards.

Abstract: A phase change memory is provided. The method includes forming contact plugs in a first dielectric layer. A second dielectric layer is formed overlying the first dielectric layer and a trench formed therein exposing portions of the contact plugs. A metal layer is formed over surfaces of the trench. One or more heaters are formed from the metal layer such that each heater is formed along one or more sidewalls and a portion of the bottom of the trench, wherein the portion of the heater along the sidewalls does not include a corner region of adjacent sidewalls. The trench is filled with a third dielectric layer, and a fourth dielectric layer is formed over the third dielectric layer. Trenches are formed in the fourth dielectric layer and filled with a phase change material. An electrode is formed over the phase change material.

Abstract: A keyboard type input device has multiple key positions provided as character entry keys. Each key corresponds to one key in the selected row of the conventional QWERTY keyboard. A second set of control buttons provide for the selection of which row of a conventional QWERTY keyboard are represented by the character keys in addition to other functions such as case shift, and alpha-numerical control functions. A selected row is shown on a display, as visual feedback. Alternatively the keys are implemented as LCDs with pressure sensors and the characters of the selected row are displayed directly on the corresponding key positions. The keyboard finds particular use in portable devices as it demands less space than traditional keyboards. The keyboard type input device is implemented with various electronic appliances, including portable phones.

Abstract: An integrated circuit structure for isolating substrate noise and a method of forming the same are provided. In the preferred embodiment of the present invention, a semi-insulating region is formed using proton bombardment in a substrate between a first circuit region and a second circuit region. Two guard rings are formed along the semi-insulating region, each on a side. A backside semi-insulating region is formed through proton bombardment from the back surface of the substrate into the substrate. The backside semi-insulating region is preferably connected with the semi-insulating region. A grounded guard layer is preferably formed on the backside semi-insulating region.

Abstract: A magnetoresistive magnetic data storage product and a method for fabrication thereof both employ a magnetic data storage device formed over a substrate. The magnetic data storage device comprises a free magnetoresistive material layer separated from a pinned magnetoresistive material layer by a dielectric spacer material layer, each having a sidewall. The magnetic data storage product also comprises a sidewall spacer material layer formed annularly surrounding and covering the sidewall of at least one of the free magnetoresistive material layer and the pinned magnetoresistive material layer. The magnetic data storage product is fabricated with enhanced magnetic data storage density.

Abstract: A new magnetic RAM cell device is achieved. The device comprises a plurality MTJ cells each comprising a free layer and a pinned layer separated by a dielectric layer. A common conductive layer couples together all of the pinned layers of the MJT cell. A first end of the common conductive layer is switchably coupled to a programming line. A second end of the common conductive layer is switchably coupled to a ground. A pluraity of diodes is used. Each diode is coupled between one of the MJT cells and one of a plurality of bit lines.

Abstract: A new magnetic RAM cell device is achieved. The device comprises a plurality MTJ cells each comprising a free layer and a pinned layer separated by a dielectric layer. A common conductive layer couples together all of the pinned layers of the MTJ cells. A first end of the common conductive layer is switchably coupled to a programming line. A second end of the common conductive layer is switchably coupled to a ground. A plurality of diodes is used. Each diode is coupled between one of the MTJ cells and one of a plurality of bit lines.

Abstract: A magnetoresistive magnetic data storage product and a method for fabrication thereof both employ a magnetic data storage device formed over a substrate. The magnetic data storage device comprises a free magnetoresistive material layer separated from a pinned magnetoresistive material layer by a dielectric spacer material layer, each having a sidewall. The magnetic data storage product also comprises a sidewall spacer material layer formed annularly surrounding and covering the sidewall of at least one of the free magnetoresistive material layer and the pinned magnetoresistive material layer. The magnetic data storage product is fabricated with enhanced magnetic data storage density.

Abstract: A problem associated with the programming of MRAM (magnetic random access memory) has been that the required current is orders of magnitude larger than that needed for many other memory devices such as SRAMs or DRAMs. This problem has been overcome by adding heating lines to the standard array configuration. These lines provide local heating sources located in close proximity to the memory elements so that when a given element is being programmed it is also being heated. The effect of the heating is to lower the threshold for magnetization so that a lower field (and hence reduced program current) can be used. It is also possible to make the base layer of the memory element itself serve as the heating element.

Abstract: A problem associated with the programming of MRAM (magnetic random access memory) has been that the required current is orders of magnitude larger than that needed for many other memory devices such as SRAMs or DRAMs. This problem has been overcome by adding heating lines to the standard array configuration. These lines provide local heating sources located in close proximity to the memory elements so that when a given element is being programmed it is also being heated. The effect of the heating is to lower the threshold for magnetization so that a lower field (and hence reduced program current) can be used. It is also possible to make the base layer of the memory element itself serve as the heating element.

Abstract: A virtual input device uses the acoustical signature of the user's fingers to determine which character is selected. Rows of acoustical sensors having different acoustical properties are spaced in the vertical direction. When a user touches a specific row with a particular finger a unique acoustical signature is produced. The acoustical signature is analyzed to determine the finger used, the row, and the specific action by the finger, e.g. slide, press, tap. The combinations of the row, finger and action define the character selected. The characters are associated with the combinations in such a way to provide a traditional keyboard setup. Visual feedback of the character selected is provided by a display device of the system.

Abstract: A keyboard type input device has multiple key positions provided as character entry keys. Each key corresponds to one key in the selected row of the conventional QWERTY keyboard. A second set of control buttons provide for the selection of which row of a conventional QWERTY keyboard are represented by the character keys in addition to other functions such as case shift, and alpha-numerical control functions. A selected row is shown on a display, as visual feedback. Alternatively the keys are implemented as LCDs with pressure sensors and the characters of the selected row are displayed directly on the corresponding key positions. The keyboard finds particular use in portable devices as it demands less space than traditional keyboards. One embodiment utilizes the keyboard as a wrist watch I/O device.