Patents by Inventor Duen-Huei HOU
Duen-Huei HOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230369334Abstract: A semiconductor device includes a first semiconductor fin that is formed over a substrate and extends along a first lateral axis. The semiconductor device includes a second semiconductor fin that is also formed over the substrate and extends along the first lateral axis. At least a tip portion of the first semiconductor fin and at least a tip portion of the second semiconductor fin bend toward each other along a second lateral axis that is perpendicular to the first lateral axis.Type: ApplicationFiled: July 24, 2023Publication date: November 16, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Duen-Huei Hou, Tsu Hao Wang, Chao-Cheng Chen, Chun-Hung Lee, Hsin-Chih Chen, Kuo-Chin Liu
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Patent number: 11774241Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: GrantFiled: December 15, 2021Date of Patent: October 3, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wei-Shan Hu, Dong Gui, Jang Jung Lee, Che-Liang Li, Duen-Huei Hou, Wen-Chung Liu
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Patent number: 11749681Abstract: A semiconductor device includes a first semiconductor fin that is formed over a substrate and extends along a first lateral axis. The semiconductor device includes a second semiconductor fin that is also formed over the substrate and extends along the first lateral axis. At least a tip portion of the first semiconductor fin and at least a tip portion of the second semiconductor fin bend toward each other along a second lateral axis that is perpendicular to the first lateral axis.Type: GrantFiled: March 9, 2021Date of Patent: September 5, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Duen-Huei Hou, Chao-Cheng Chen, Chun-Hung Lee, Hsin-Chih Chen, Kuo-Chin Liu, J. H. Wang
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Publication number: 20230269951Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.Type: ApplicationFiled: April 24, 2023Publication date: August 24, 2023Inventors: Ji-Feng YING, Duen-Huei HOU
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Patent number: 11659718Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.Type: GrantFiled: May 10, 2021Date of Patent: May 23, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ji-Feng Ying, Duen-Huei Hou
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Publication number: 20230040346Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The semiconductor device includes a first gate structure and a second gate structure. The first gate structure includes a first interfacial oxide (IO) layer, a first high-K (HK) dielectric layer disposed on the first interfacial oxide layer, and a first dipole layer disposed at an interface between the first IL layer and the first HK dielectric layer. The HK dielectric layer includes a rare-earth metal dopant or an alkali metal dopant. The second gate structure includes a second IL layer, a second HK dielectric layer disposed on the second IL layer, and a second dipole layer disposed at an interface between the second IL layer and the second HK dielectric layer. The second HK dielectric layer includes a transition metal dopant and the rare-earth metal dopant or the alkali metal dopant.Type: ApplicationFiled: March 22, 2022Publication date: February 9, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsiang-Pi CHANG, Huang-Lin CHAO, Chung-Liang CHENG, Pinyen LIN, Chun-Chun LIN, Tzu-Li LEE, Yu-Chia LIANG, Duen-Huei HOU, Wen-Chung LIU, Chun-I WU
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Publication number: 20220107179Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: ApplicationFiled: December 15, 2021Publication date: April 7, 2022Inventors: Wei-Shan HU, Dong GUI, Jang Jung LEE, Che-Liang LI, Duen-Huei HOU, Wen-Chung LIU
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Patent number: 11244714Abstract: A method of writing to a magnetic random access memory cell includes applying an alternating current signal to the magnetic random access memory cell having a first magnetic orientation, and applying a direct current pulse to the magnetic random access memory cell to change the magnetic orientation of the magnetic random access memory cell from the first magnetic orientation to a second magnetic orientation. The first magnetic orientation and the second magnetic orientation are different.Type: GrantFiled: February 8, 2021Date of Patent: February 8, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ji-Feng Ying, Jhong-Sheng Wang, Duen-Huei Hou
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Patent number: 11236996Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: GrantFiled: July 13, 2020Date of Patent: February 1, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wei-Shan Hu, Dong Gui, Jang Jung Lee, Che-Liang Li, Duen-Huei Hou, Wen-Chung Liu
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Publication number: 20210366909Abstract: A semiconductor device includes a first semiconductor fin that is formed over a substrate and extends along a first lateral axis. The semiconductor device includes a second semiconductor fin that is also formed over the substrate and extends along the first lateral axis. At least a tip portion of the first semiconductor fin and at least a tip portion of the second semiconductor fin bend toward each other along a second lateral axis that is perpendicular to the first lateral axis.Type: ApplicationFiled: March 9, 2021Publication date: November 25, 2021Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: Duen-Huei Hou, Chao-Cheng Chen, Chun-Hung Lee, Hsin-Chih Chen, Kuo-Chin Liu, J.H. Wang
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Publication number: 20210265424Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.Type: ApplicationFiled: May 10, 2021Publication date: August 26, 2021Inventors: Ji-Feng YING, Duen-Huei HOU
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Publication number: 20210241809Abstract: A method of writing to a magnetic random access memory cell includes applying an alternating current signal to the magnetic random access memory cell having a first magnetic orientation, and applying a direct current pulse to the magnetic random access memory cell to change the magnetic orientation of the magnetic random access memory cell from the first magnetic orientation to a second magnetic orientation. The first magnetic orientation and the second magnetic orientation are different.Type: ApplicationFiled: February 8, 2021Publication date: August 5, 2021Inventors: Ji-Feng YING, Jhong-Sheng WANG, Duen-Huei HOU
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Patent number: 11004901Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.Type: GrantFiled: January 15, 2020Date of Patent: May 11, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ji-Feng Ying, Duen-Huei Hou
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Patent number: 10916286Abstract: A method of writing to a magnetic random access memory cell includes applying an alternating current signal to the magnetic random access memory cell having a first magnetic orientation, and applying a direct current pulse to the magnetic random access memory cell to change the magnetic orientation of the magnetic random access memory cell from the first magnetic orientation to a second magnetic orientation. The first magnetic orientation and the second magnetic orientation are different.Type: GrantFiled: May 31, 2019Date of Patent: February 9, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ji-Feng Ying, Jhong-Sheng Wang, Duen-Huei Hou
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Publication number: 20200340807Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: ApplicationFiled: July 13, 2020Publication date: October 29, 2020Inventors: Wei-Shan HU, Dong GUI, Jang Jung LEE, Che-Liang LI, Duen-Huei HOU, Wen-Chung LIU
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Patent number: 10746542Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: GrantFiled: March 22, 2019Date of Patent: August 18, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Shan Hu, Dong Gui, Jang Jung Lee, Che-Liang Li, Duen-Huei Hou, Wen-Chung Liu
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Publication number: 20200152701Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.Type: ApplicationFiled: January 15, 2020Publication date: May 14, 2020Inventors: Ji-Feng YING, Duen-Huei HOU
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Publication number: 20200096332Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: ApplicationFiled: March 22, 2019Publication date: March 26, 2020Inventors: Wei-Shan Hu, Dong Gui, Jang Jung Lee, Che-Liang Li, Duen-Huei Hou, Wen-Chung Liu
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Publication number: 20200058340Abstract: A method of writing to a magnetic random access memory cell includes applying an alternating current signal to the magnetic random access memory cell having a first magnetic orientation, and applying a direct current pulse to the magnetic random access memory cell to change the magnetic orientation of the magnetic random access memory cell from the first magnetic orientation to a second magnetic orientation. The first magnetic orientation and the second magnetic orientation are different.Type: ApplicationFiled: May 31, 2019Publication date: February 20, 2020Inventors: Ji-Feng YING, Jhong-Sheng WANG, Duen-Huei HOU
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Patent number: 10541269Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.Type: GrantFiled: June 26, 2018Date of Patent: January 21, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ji-Feng Ying, Duen-Huei Hou