Patents by Inventor Dustin Ho
Dustin Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240142792Abstract: A fiber array launcher assembly including a hollow body having a front end and a rear end; an alignment plate having an array of holes coupled to the rear end of the body; a beam shaper having an array of lenses coupled to the front end of the body, where a separate lens is aligned with each hole in the alignment plate; and a plurality of fiber assemblies each including a fiber having an end face spliced to an end of an endcap where the endcap has a larger diameter than a diameter of the fiber, and where a separate endcap is secured in each hole so that the fiber is aligned with the associated lens.Type: ApplicationFiled: January 9, 2024Publication date: May 2, 2024Inventors: Dustin Guenther, Gregory D. Goodno, James Ho
-
Patent number: 11919869Abstract: Provided herein is A compound of Formula I: or a pharmaceutically acceptable salt thereof, wherein the various substituents are described herein.Type: GrantFiled: October 27, 2022Date of Patent: March 5, 2024Assignee: Gilead Sciences, Inc.Inventors: Mark J. Bartlett, Gregory F. Chin, Michael O. Clarke, Jennifer L Cosman, Deeba Ensan, Bindu Goyal, Stephen Ho, Richard L Mackman, Michael R. Mish, Dustin S. Siegel, Kyle C. Tamshen, Hai Yang
-
Patent number: 11914168Abstract: A method for assembling a two-dimensional fiber array launcher assembly. The method includes providing an alignment structure having a two-dimensional alignment plate with holes at one end and a two-dimensional beam shaper with micro-lenses at an opposite end. An endcap having a fiber attached thereto is systematically positioned in each hole, and is aligned with one of the micro-lenses with a high precision tolerance. The aligned endcap is then secured in the hole using a curable glue. This process is continued until all of the holes have aligned endcaps. If one of the endcaps is mis-aligned or becomes damaged, the glue can be heated and the endcap realigned or replaced.Type: GrantFiled: January 12, 2022Date of Patent: February 27, 2024Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: Dustin Guenther, Gregory D. Goodno, James Ho
-
Publication number: 20090305515Abstract: Embodiments of the invention generally relate to a method and apparatus for curing dielectric material deposited in trenches or gaps in the surface of a substrate to produce a feature free of voids and seams. In one embodiment, the dielectric material is steam annealed while being exposed to ultraviolet radiation. In one embodiment, the dielectric material is further thermally annealed in a nitrogen environment.Type: ApplicationFiled: June 6, 2008Publication date: December 10, 2009Inventors: Dustin Ho, Scott Hendrickson, Juan Carlos Rocha-Alvarez, Sanjeev Baluja, Thomas Nowak
-
Publication number: 20080099920Abstract: Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.Type: ApplicationFiled: October 22, 2007Publication date: May 1, 2008Applicant: APPLIED MATERIALS, INC. A Delaware corporationInventors: Francimar Schmitt, Yi Zheng, Kang Yim, Sang Ahn, Lester D'Cruz, Dustin Ho, Alexandros Demos, Li-Qun Xia, Derek Witty, Hichem M'Saad
-
Publication number: 20080067425Abstract: Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other.Type: ApplicationFiled: March 15, 2007Publication date: March 20, 2008Applicant: Applied Materials, Inc.Inventors: Andrzei Kaszuba, Juan Rocha-Alvarez, Sanjeev Baluja, Tom Cho, Hichem M'Saad, Scott Hendrickson, Dustin Ho, Thomas Nowak
-
Publication number: 20070286963Abstract: Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other.Type: ApplicationFiled: March 15, 2007Publication date: December 13, 2007Applicant: Applied Materials, Inc.Inventors: Juan Rocha-Alvarez, Thomas Nowak, Dale Du Bois, Sanjeev Baluja, Scott Hendrickson, Dustin Ho, Andrzei Kaszuba, Tom Cho
-
Publication number: 20070257205Abstract: Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other.Type: ApplicationFiled: March 15, 2007Publication date: November 8, 2007Applicant: Applied Materials, Inc.Inventors: Juan Rocha-Alvarez, Thomas Nowak, Dale Du Bois, Sanjeev Baluja, Scott Hendrickson, Dustin Ho, Andrzei Kaszuba, Tom Cho
-
Publication number: 20060270221Abstract: A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited from a gas mixture comprising an organosilicon compound and an oxidizing gas in the presence of RF power in a chamber. The RF power and a flow of the organosilicon compound and the oxidizing gas are continued in the chamber after the deposition of the low dielectric constant film at flow rates sufficient to deposit an oxide rich cap on the low dielectric constant film.Type: ApplicationFiled: July 24, 2006Publication date: November 30, 2006Inventors: Hichem M'Saad, Dustin Ho, Juan Rocha-Alvarez
-
Publication number: 20060251827Abstract: An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV bulbs per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV bulbs can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.Type: ApplicationFiled: May 9, 2005Publication date: November 9, 2006Inventors: Thomas Nowak, Juan Rocha-Alvarez, Andrzej Kaszuba, Scott Hendrickson, Dustin Ho, Sanjeev Baluja, Tom Cho, Josephine Chang, Hichem M'Saad
-
Publication number: 20060249078Abstract: An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV bulbs per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV bulbs can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.Type: ApplicationFiled: June 15, 2006Publication date: November 9, 2006Inventors: Thomas Nowak, Juan Rocha-Alvarez, Andrzej Kaszuba, Scott Hendrickson, Dustin Ho, Sanjeev Baluja, Tom Cho, Josephine Chang, Hichem M'Saad
-
Publication number: 20060249175Abstract: An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV bulbs per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV bulbs can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.Type: ApplicationFiled: September 20, 2005Publication date: November 9, 2006Inventors: Thomas Nowak, Juan Rocha-Alvarez, Andrzej Kaszuba, Scott Hendrickson, Dustin Ho, Sanjeev Baluja, Tom Cho, Josephine Chang, Hichem M'Saad
-
Publication number: 20060160374Abstract: Nano-porous low dielectric constant films are deposited utilizing materials having reactive by-products readily removed from a processing chamber by plasma cleaning. In accordance with one embodiment, an oxidizable silicon containing compound is reacted with an oxidizable non-silicon component having thermally labile groups, in a reactive oxygen ambient and in the presence of a plasma. The deposited silicon oxide film is annealed to form dispersed microscopic voids or pores that remain in the nano-porous silicon. Oxidizable non-silicon components with thermally labile groups that leave by-products readily removed from the chamber, include but are not limited to, limonene, carene, cymene, fenchone, vinyl acetate, methyl methacrylate, ethyl vinyl ether, tetrahydrofuran, furan, 2,5 Norbornadiene, cyclopentene, cyclopentene oxide, methyl cyclopentene, 2-cyclopentene-1-one, and 1-butene.Type: ApplicationFiled: September 9, 2005Publication date: July 20, 2006Applicant: Applied Materials, Inc.Inventors: Dustin Ho, Derek Witty, Helen Armer, Hichem M'Saad
-
Publication number: 20050250348Abstract: A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited from a gas mixture comprising an organosilicon compound and an oxidizing gas in the presence of RF power in a chamber. The RF power and a flow of the organosilicon compound and the oxidizing gas are continued in the chamber after the deposition of the low dielectric constant film at flow rates sufficient to deposit an oxide rich cap on the low dielectric constant film.Type: ApplicationFiled: May 6, 2004Publication date: November 10, 2005Inventors: Li-Qun Xia, Huiwen Xu, Derek Witty, Hichem M'Saad, Dustin Ho, Juan Rocha-Alvarez
-
Publication number: 20050230834Abstract: Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.Type: ApplicationFiled: March 21, 2005Publication date: October 20, 2005Applicant: Applied Materials, Inc.Inventors: Francimar Schmitt, Yi Zheng, Kang Yim, Sang Ahn, Lester D'Cruz, Dustin Ho, Alexandros Demos, Li-Qun Xia, Derek Witty, Hichem M'Saad