Abstract: A recessed dielectric antifuse device includes a substrate and laterally spaced source and drain regions formed in the substrate. A recess is formed between the source and drain regions. A gate and gate oxide are formed in the recess and lightly doped source and drain extension regions contiguous with the laterally spaced source and drain regions are optionally formed adjacent the recess. Programming of the recessed dielectric antifuse is performed by application of power to the gate and at least one of the source region and the drain region to breakdown the dielectric, which minimizes resistance between the gate and the channel.

Abstract: A fluidkinetic energy converter includes a passageway-filled enclosure. Turbines are mounted in the passageways and fluid flow may be concentrated on subparts of the turbines by inner fluid flow deflectors or dividers. The energy converter enclosure can include dividers at both inlets and outlets in order to be adaptable for either river or tidal environments. Notably, apart from the turbines and energy generating components, the enclosure may be implemented such as to have no moving parts, thereby reducing complexity, cost, and weight.

Abstract: A recessed dielectric antifuse device includes a substrate and laterally spaced source and drain regions formed in the substrate. A recess is formed between the source and drain regions. A gate and gate oxide are formed in the recess and lightly doped source and drain extension regions contiguous with the laterally spaced source and drain regions are optionally formed adjacent the recess. Programming of the recessed dielectric antifuse is performed by application of power to the gate and at least one of the source region and the drain region to breakdown the dielectric, which minimizes resistance between the gate and the channel.

Abstract: A recessed dielectric antifuse device includes a substrate and laterally spaced source and drain regions formed in the substrate. A recess is formed between the source and drain regions. A gate and gate oxide are formed in the recess and lightly doped source and drain extension regions contiguous with the laterally spaced source and drain regions are optionally formed adjacent the recess. Programming of the recessed dielectric antifuse is performed by application of power to the gate and at least one of the source region and the drain region to breakdown the dielectric, which minimizes resistance between the gate and the channel.

Abstract: A recessed dielectric antifuse device includes a substrate and laterally spaced source and drain regions formed in the substrate. A recess is formed between the source and drain regions. A gate and gate oxide are formed in the recess and lightly doped source and drain extension regions contiguous with the laterally spaced source and drain regions are optionally formed adjacent the recess. Programming of the recessed dielectric antifuse is performed by application of power to the gate and at least one of the source region and the drain region to breakdown the dielectric, which minimizes resistance between the gate and the channel.

Abstract: A recessed dielectric antifuse device includes a substrate and laterally spaced source and drain regions formed in the substrate. A recess is formed between the source and drain regions. A gate and gate oxide are formed in the recess and lightly doped source and drain extension regions contiguous with the laterally spaced source and drain regions are optionally formed adjacent the recess. Programming of the recessed dielectric antifuse is performed by application of power to the gate and at least one of the source region and the drain region to breakdown the dielectric, which minimizes resistance between the gate and the channel.

Abstract: A recessed dielectric antifuse device includes a substrate and laterally spaced source and drain regions formed in the substrate. A recess is formed between the source and drain regions. A gate and gate oxide are formed in the recess and lightly doped source and drain extension regions contiguous with the laterally spaced source and drain regions are optionally formed adjacent the recess. Programming of the recessed dielectric antifuse is performed by application of power to the gate and at least one of the source region and the drain region to breakdown the dielectric, which minimizes resistance between the gate and the channel.

Abstract: A current measuring circuit for a field emission display includes a testing circuit coupled between a high voltage testing source and the display. The testing circuit includes a sampling circuit formed from a sampling impedance coupled in parallel with a high isolation switch. In one embodiment, the sample circuit is on the high voltage side of the testing source. In another embodiment, the sampling circuit is on the return (low voltage) side of the testing source. In normal operation, the switch is closed to provide the testing voltage directly to the display. During testing, the switch is open so that current flows through the sampling impedance. A sensing circuit coupled to the output of the sampling impedance determines a voltage change in response to opening of the switch. In response to a sensed voltage change, a microprocessor-based controller computes the current drawn by the display.