Abstract: A body of a superstrate can be used to form an adaptive planarization layer over a substrate that has a non-uniform topography. A body of a superstrate can have bending characteristics that are well suited to achieve both conformal and planarization behavior. The body can have a surface and a thickness in a range of t1 to t2, t1=(Pd4/2Eh)1/3; t2=(5Pd4/2Eh)1/3; P is a pressure corresponding to a capillary force between the body and a planarization precursor material; d is a bending distance; E is Young's modulus for the body; and h is a step height difference between two adjacent regions of a substrate. In an embodiment, a thickness can be selected and used to determine the maximum out-of-plane displacement, wmax, for conformal behavior is sufficient and that wmax for planarization behavior is below a predetermined threshold.

Abstract: A body of a superstrate can be used to form an adaptive planarization layer over a substrate that has a non-uniform topography. A body of a superstrate can have bending characteristics that are well suited to achieve both conformal and planarization behavior. The body can have a surface and a thickness in a range of t1 to t2, t1=(Pd4/2Eh)1/3; t2=(5Pd4/2Eh)1/3; P is a pressure corresponding to a capillary force between the body and a planarization precursor material; d is a bending distance; E is Young's modulus for the body; and h is a step height difference between two adjacent regions of a substrate. In an embodiment, a thickness can be selected and used to determine the maximum out-of-plane displacement, wmax, for conformal behavior is sufficient and that wmax for planarization behavior is below a predetermined threshold.

Abstract: A body of a superstrate can be used to form an adaptive planarization layer over a substrate that has a non-uniform topography. A body of a superstrate can have bending characteristics that are well suited to achieve both conformal and planarization behavior. The body can have a surface and a thickness in a range of t1 to t2, t1=(Pd4/2Eh)1/3; t2=(5Pd4/2Eh)1/3; P is a pressure corresponding to a capillary force between the body and a planarization precursor material; d is a bending distance; E is Young's modulus for the body; and h is a step height difference between two adjacent regions of a substrate. In an embodiment, a thickness can be selected and used to determine the maximum out-of-plane displacement, wmax, for conformal behavior is sufficient and that wmax for planarization behavior is below a predetermined threshold.

Abstract: Methods and apparatus for planarization of a substrate. Material is dispensed onto the substrate that varies depending upon the substrate topography variation. A superstrate is brought into contact with the material, the material takes on a shape of the superstrate. The material is solidified. The superstrate is lifted away from the solidified material. Material has a first shrinkage coefficient. Second material is dispensed onto the solidified material with an average thickness. The average thickness is greater than a second material thickness threshold that is dependent upon step height of the substrate and the first shrinkage coefficient. The second material is then solidified.

Abstract: A body of a superstrate can be used to form an adaptive planarization layer over a substrate that has a non-uniform topography. A body of a superstrate can have bending characteristics that are well suited to achieve both conformal and planarization behavior. The body can have a surface and a thickness in a range of t1 to t2, t1=(Pd4/2Eh)1/3; t2=(5Pd4/2Eh)1/3; P is a pressure corresponding to a capillary force between the body and a planarization precursor material; d is a bending distance; E is Young's modulus for the body; and h is a step height difference between two adjacent regions of a substrate. In an embodiment, a thickness can be selected and used to determine the maximum out-of-plane displacement, wmax, for conformal behavior is sufficient and that wmax for planarization behavior is below a predetermined threshold.

Abstract: A method of can be used to generating a fluid droplet pattern for an imprint lithography process. A fluid dispense head can include a set of fluid dispense ports, wherein the fluid dispense ports are in a fixed arrangement. The method can include rotating the set of the fluid dispense ports to a rotation angle to change a fluid droplet pitch in a first direction; moving a substrate and the set of the fluid dispense ports relative to each other in a second direction substantially perpendicular to the first direction; and dispensing fluid droplets onto the substrate while moving the substrate and the set of the fluid dispense ports relative to each other. The method can be used in the formation of an electronic component within or over a semiconductor substrate. The apparatus can be configured to carry out the methods as described herein.

Abstract: Methods and apparatus for planarization of a substrate. Material is dispensed onto the substrate that varies depending upon the substrate topography variation. A superstrate is brought into contact with the material, the material takes on a shape of the superstrate. The material is solidified. The superstrate is lifted away from the solidified material. Material has a first shrinkage coefficient. Second material is dispensed onto the solidified material with an average thickness. The average thickness is greater than a second material thickness threshold that is dependent upon step height of the substrate and the first shrinkage coefficient. The second material is then solidified.

Abstract: Methods of reversing the tone of a pattern having non-uniformly sized features. The methods include depositing a highly conformal hard mask layer over the patterned layer with a non-planar protective coating and etch schemes for minimizing critical dimension variations.

Abstract: A method of can be used to generating a fluid droplet pattern for an imprint lithography process. A fluid dispense head can include a set of fluid dispense ports, wherein the fluid dispense ports are in a fixed arrangement. The method can include rotating the set of the fluid dispense ports to a rotation angle to change a fluid droplet pitch in a first direction; moving a substrate and the set of the fluid dispense ports relative to each other in a second direction substantially perpendicular to the first direction; and dispensing fluid droplets onto the substrate while moving the substrate and the set of the fluid dispense ports relative to each other. The method can be used in the formation of an electronic component within or over a semiconductor substrate. The apparatus can be configured to carry out the methods as described herein.

Abstract: A method used to create small pattern features over existing topography variations. The method includes providing a substrate having a surface having non-planar surface variations; forming a multi-stack layer over the substrate, by applying a first carbon layer over the substrate, with the resultant first carbon layer having non-planar surface variations corresponding to the non-planar surface variations of the underlying substrate, followed by applying a second planarizing layer over the first carbon layer; depositing a hard mask on the multi-stack layer; forming a patterned layer on the hard mask, the formed patterned layers having features; and performing one or more etch steps to etch the formed patterned layer features into the multi-layer stack. The multi-layer stack has a composite effective mechanical stiffness (Eeff) sufficient to maintain the one or more etched features with minimal feature collapse.

Abstract: A method used to create small pattern features over existing topography variations. The method includes providing a substrate having a surface having non-planar surface variations; forming a multi-stack layer over the substrate, by applying a first carbon layer over the substrate, with the resultant first carbon layer having non-planar surface variations corresponding to the non-planar surface variations of the underlying substrate, followed by applying a second planarizing layer over the first carbon layer; depositing a hard mask on the multi-stack layer; forming a patterned layer on the hard mask, the formed patterned layers having features; and performing one or more etch steps to etch the formed patterned layer features into the multi-layer stack. The multi-layer stack has a composite effective mechanical stiffness (Eeff) sufficient to maintain the one or more etched features with minimal feature collapse.

Abstract: Methods of reversing the tone of a pattern having non-uniformly sized features. The methods include depositing a highly conformal hard mask layer over the patterned layer with a non-planar protective coating and etch schemes for minimizing critical dimension variations.

Abstract: Methods of increasing etch selectivity in imprint lithography are described which employ material deposition techniques that impart a unique morphology to the multi-layer material stacks, thereby enhancing etch process window and improving etch selectivity. For example, etch selectivity of 50:1 or more between patterned resist layer and deposited metals, metalloids, or non-organic oxides can be achieved, which greatly preserves the pattern feature height prior to the etch process that transfers the pattern into the substrate, allowing for sub-20 nm pattern transfer at high fidelity.

Abstract: Methods of increasing etch selectivity in imprint lithography are described which employ material deposition techniques that impart a unique morphology to the multi-layer material stacks, thereby enhancing etch process window and improving etch selectivity. For example, etch selectivity of 50:1 or more between patterned resist layer and deposited metals, metalloids, or non-organic oxides can be achieved, which greatly preserves the pattern feature height prior to the etch process that transfers the pattern into the substrate, allowing for sub-20 nm pattern transfer at high fidelity.

Abstract: Imprint lithography templates having alignment marks with highly absorptive material. The alignment marks are insensitive to the effects of liquid spreading and can provide stability and increase contrast to alignment system during liquid imprint filling of template features.

Abstract: Imprint lithography templates having alignment marks with highly absorptive material. The alignment marks are insensitive to the effects of liquid spreading and can provide stability and increase contrast to alignment system during liquid imprint filling of template features.

Abstract: Two-stage imprinting techniques capable of protecting fine patterned features of an imprint lithography template are herein described. In particular, such techniques may be used during fabrication of recessed high-contrast alignment marks for preventing deposited metal layers from coming into contact with fine features etched into the template.

Abstract: Detection of periodically repeating nanovoids is indicative of levels of substrate contamination and may aid in reduction of contaminants on substrates. Systems and methods for detecting nanovoids, in addition to, systems and methods for cleaning and/or maintaining cleanliness of substrates are described.

Abstract: Devices positioned between an energy source and an imprint lithography template may block exposure of energy to portions of polymerizable material dispensed on a substrate. Portions of the polymerizable material that are blocked from the energy may remain fluid, while the remaining polymerizable material is solidified.

Abstract: Methods for creating nano-shaped patterns are described. This approach may be used to directly pattern substrates and/or create imprint lithography molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates in a high throughput process.