Abstract: A method for fabricating a thin film component according to one embodiment comprises forming a wafer having a thin film layer, a release layer, and a patterned layer of photoresist; transferring the pattern of the layer of photoresist to the release layer and the thin film layer; adding a layer of metal to the wafer; heating the wafer to a predetermined temperature for a period of time sufficient to cause deformation of the photoresist to an extent that the photoresist creates cracks in the metal layer; applying a solvent to dissolve at least a portion of the release layer, the solvent penetrating the cracks in the metal layer to reach the release layer; and removing the release layer and any portions of the layers above the release layer.

Abstract: A method for fabricating a thin film component according to one embodiment comprises forming a wafer having a thin film layer, a release layer, and a patterned layer of photoresist; transferring the pattern of the layer of photoresist to the release layer and the thin film layer; adding a layer of material to the wafer; heating the wafer to a predetermined temperature for a period of time sufficient to cause deformation of the photoresist to an extent that the photoresist creates cracks in the material layer; applying a solvent to dissolve at least a portion of the release layer, the solvent penetrating the cracks in the material layer to reach the release layer; and removing the release layer and any portions of the layers above the release layer.

Abstract: A method for fabricating a thin film component includes forming a wafer having a thin film layer, a release layer, and a patterned layer of photoresist. The pattern of the layer of photoresist is transferred to the release layer and the thin film layer. A layer of metal is added to the wafer. The wafer is heated to a temperature above a glass transition temperature of the photoresist for a period of time sufficient to cause deformation of the photoresist to an extent that the photoresist creates cracks in the metal layer. A solvent is applied to the wafer to dissolve the release layer, the solvent penetrating the cracks in the metal layer to reach the release layer. The release layer and any material above the release layer are removed.

Abstract: A method for fabricating a thin film component includes forming a wafer having a thin film layer, a release layer, and a patterned layer of photoresist. The pattern of the layer of photoresist is transferred to the release layer and the thin film layer. A layer of metal is added to the wafer. The wafer is heated to a temperature above a glass transition temperature of the photoresist for a period of time sufficient to cause deformation of the photoresist to an extent that the photoresist creates cracks in the metal layer. A solvent is applied to the wafer to dissolve the release layer, the solvent penetrating the cracks in the metal layer to reach the release layer. The release layer and any material above the release layer are removed.

Abstract: A magnetoresistance sensor includes a substrate and a sensor structure deposited upon the substrate and having a first lateral side and a second lateral side. The sensor structure includes a layered transverse biasing structure, a free layer deposited upon the layered transverse biasing structure, and a cap layer deposited upon a central portion of the free layer but not upon a side portion of the free layer adjacent to each lateral side. Longitudinal hard biasing structures are disposed laterally adjacent to the lateral sides of the sensor structure. Each longitudinal hard biasing structure has a magnetic seed layer deposited upon the substrate, the respective lateral side of the sensor structure, and the respective side portion of the free layer. A magnetic hard bias layer is deposited upon the seed layer.

Abstract: A free layer for a spin valve sensor includes a cobalt iron (CoFe) film which has an easy axis oriented perpendicular to an air bearing surface (ABS) of a read head and a nickel iron (NiFe) film which has an easy axis oriented parallel to the ABS and parallel to the major planes of the thin film layers. In a further embodiment the free layer is annealed at a high temperature in the presence of a field which is oriented perpendicular to the ABS.

Abstract: A magnetoresistance sensor includes a substrate and a sensor structure deposited upon the substrate and having a first lateral side and a second lateral side. The sensor structure includes a layered transverse biasing structure, a free layer deposited upon the layered transverse biasing structure, and a cap layer deposited upon a central portion of the free layer but not upon a side portion of the free layer adjacent to each lateral side. Longitudinal hard biasing structures are disposed laterally adjacent to the lateral sides of the sensor structure. Each longitudinal hard biasing structure has a magnetic seed layer deposited upon the substrate, the respective lateral side of the sensor structure, and the respective side portion of the free layer. A magnetic hard bias layer is deposited upon the seed layer.

Abstract: A free layer for a spin valve sensor includes a cobalt iron (CoFe) film which has an easy axis oriented perpendicular to an air bearing surface (ABS) of a read head and a nickel iron (NiFe) film which has an easy axis oriented parallel to the ABS and parallel to the major planes of the thin film layers. In a further embodiment the free layer is annealed at a high temperature in the presence of a field which is oriented perpendicular to the ABS.