Abstract: Field-enhanced sputtering targets are disclosed that include: a core material; and a surface material, wherein at least one of the core material or the surface material has a field strength design profile and wherein the sputtering target comprises a substantially uniform erosion profile. Target assembly systems are also disclosed that include a field-enhanced sputtering target; and an anodic shield. Additionally, methods of producing a substantially uniform erosion on a sputtering target are described that include: providing an anodic shield; providing a cathodic field-enhanced target; and initiating a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the cathodic field-enhanced target.

Abstract: Field-enhanced sputtering targets are disclosed that include: a core material; and a surface material, wherein at least one of the core material or the surface material has a field strength design profile and wherein the sputtering target comprises a substantially uniform erosion profile. Target assembly systems are also disclosed that include a field-enhanced sputtering target; and an anodic shield. Additionally, methods of producing a substantially uniform erosion on a sputtering target are described that include: providing an anodic shield; providing a cathodic field-enhanced target; and initiating a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the cathodic field-enhanced target.

Abstract: An alloy for use in vapor deposition or atomic layer deposition is described herein that includes ruthenium and at least one element from group IV, V or VI of the Periodic Chart of the Elements or a combination thereof. In addition, a layered material is described herein that comprises at least one layer that includes a ruthenium-based material or ruthenium-based alloy and at least one layer that includes at least one element from group IV, V or VI of the Periodic Chart of the Elements or a combination thereof.

Abstract: The invention includes a sputtering component comprising a sputtering surface. At least 99 atomic % of the sputtering surface consists of a single phase corresponding to a solid solution of two or more elements in elemental form. Additionally, an entire volume of the sputtering component can consist of the single phase corresponding to the solid solution of the two or more elements in elemental form. The invention encompasses methods of forming mixed-metal materials utilizing one or more of a reduction process, electrolysis process and iodide process.

Abstract: In a standard target configuration, sputtered atoms distribute in a wide angle producing a non-uniform film and poor step coverage, mainly because the flux of sputtered atoms are not collimated and the center region of the wafer experiences a higher flux of sputtered atoms than the edge of the wafer. Sputtering targets described herein are topologically and morphologically tailored such that sputtered atoms impinge directly toward a wafer in a narrow cosine distribution. In effect, the target is designed with a built-in collimator. The desired morphology and topography can be accomplished by micro (e.g., parabolic dimples) and/or macro scale (e.g., wafer contour, circular wave contour) modification of the target geometry and topography.

Abstract: Hard surfaced polymers and the method for making them are generally described. Polymers are subjected to simultaneous multiple ion beam bombardment, that results in a hardening of the surface, improved wear resistance, and improved oxygen erosion resistance.

Abstract: Hard surfaced polymers and the method for making them is generally described. Polymers are subjected to simultaneous multiple ion beam bombardment, that results in a hardening of the surface and improved wear resistance.