Abstract: A microelectromechanical (MEMS) device has a movable member supported in elevated position spaced by a sloped support structure above a substrate. The movable member may be a polished metallic plate such as a mirror of a digital micromirror device (DMD) supported by a flexible hinge above an integrated circuit wafer die region. The plate may supported centrally at a raised juncture of two upwardly oppositely directed and symmetrically converging hinge legs for pivoting about a parallel axis. The plate may also be supported at a top end of a hinge leg in cantilever fashion, for pivoting about a perpendicular axis. Optional spring tips are provided for limiting movement and recovering energy. In a described fabrication method, hinge material is deposited over a sacrificial layer that has been directly or indirectly patterned using a grayscale photoresist exposure to define sloped surfaces which provide a template for configuring the hinge and optional other components.

Abstract: A microelectromechanical (MEMS) device has a movable member supported in elevated position spaced by a sloped support structure above a substrate. The movable member may be a polished metallic plate such as a mirror of a digital micromirror device (DMD) supported by a flexible hinge above an integrated circuit wafer die region. The plate may supported centrally at a raised juncture of two upwardly oppositely directed and symmetrically converging hinge legs for pivoting about a parallel axis. The plate may also be supported at a top end of a hinge leg in cantilever fashion, for pivoting about a perpendicular axis. Optional spring tips are provided for limiting movement and recovering energy. In a described fabrication method, hinge material is deposited over a sacrificial layer that has been directly or indirectly patterned using a grayscale photoresist exposure to define sloped surfaces which provide a template for configuring the hinge and optional other components.

Abstract: In accordance with the teachings of one embodiment of this disclosure, a method for manufacturing a semiconductor device includes forming a support structure outwardly from a substrate. The support structure has a first thickness and a first outer sidewall surface that is not parallel with the substrate. The first outer sidewall surface has a first minimum refractive index. A first anti-reflective layer is formed outwardly from the support structure and outwardly from the substrate. A second anti-reflective layer is formed outwardly from the first anti-reflective layer. The first and second anti-reflective layers each includes respective compounds of at least two elements selected from the group consisting of: silicon; nitrogen; and oxygen.

Abstract: In accordance with the teachings of one embodiment of this disclosure, a method for manufacturing a semiconductor device includes forming a support structure outwardly from a substrate. The support structure has a first thickness and a first outer sidewall surface that is not parallel with the substrate. The first outer sidewall surface has a first minimum refractive index. A first anti-reflective layer is formed outwardly from the support structure and outwardly from the substrate. A second anti-reflective layer is formed outwardly from the first anti-reflective layer. The first and second anti-reflective layers each includes respective compounds of at least two elements selected from the group consisting of: silicon; nitrogen; and oxygen.

Abstract: A MEMS device is packaged in a process which hydrogen (H) deuterium (D) for reduced stiction. H is exchanged with D by exposing the MEMS device with a deuterium source, such as deuterium gas or heavy water vapor, optionally with the assistance of a direct or downstream plasma.

Abstract: A MEMS device is packaged in a process which hydrogen (H) deuterium (D) for reduced stiction. H is exchanged with D by exposing the MEMS device with a deuterium source, such as deuterium gas or heavy water vapor, optionally with the assistance of a direct or downstream plasma.

Abstract: In accordance with the teachings of one embodiment of the present disclosure, a method for manufacturing a semiconductor device includes forming a support structure outwardly from a substrate. The support structure has a first thickness and a first outer sidewall surface that is not parallel with the substrate. The first outer sidewall surface has a first minimum refractive index. A first anti-reflective layer is formed outwardly from the support structure and outwardly from the substrate. A second anti-reflective layer is formed outwardly from the first anti-reflective layer. The first and second anti-reflective layers each includes respective compounds of at least two elements selected from the group consisting of: silicon; nitrogen; and oxygen.

Abstract: A method of removing photoresist material from a semiconductor wafer is disclosed. The method includes rinsing the semiconductor wafer in an organic solvent selected to dissolve the photoresist material. The method next rinses the semiconductor wafer in a light alcohol such as isopropyl alcohol. The method next subjects the semiconductor wafer to an alcohol vapor dry operation. An oxygen plasma ashing operation is then used to oxidize organic material on the semiconductor wafer. This is followed by another rinse. This post ash rinse includes only the light alcohol without the organic solvent. The post ash rinse may include dipping the semiconductor wafers into one or two isopropyl alcohol tanks. Finally is another alcohol vapor dry operation.