Abstract: A waterproof foot covering has a breathable upper enclosure of an upper, a waterproof inner lining sleeve to line the upper enclosure, and a waterproof lower enclosing shell of a lower. The bottom open end of the upper enclosure, the bottom open end of the inner lining sleeve and the upper open end of the lower enclosing shell are interconnected together by sewing, thereby forming a stitched seam. A waterproof seam-sealing member is disposed inwardly of the stitched seam. The seam-sealing member is attached to the inner surfaces of the inner lining sleeve and the lower enclosing shell, whereby water-permeation through the stitched seam from a location between the inner lining sleeve and the upper enclosure to the exterior of the upper enclosure is permitted while water-permeation through the stitched seam to the interior of the inner lining sleeve and the lower.

Abstract: A method of in-line temperature monitoring. At least two control wafers and a monitor wafer are provided. A sacrificial layer is formed on each control wafer and the monitor wafer. Ions are implanted under a predetermined condition in the sacrificial layers. Thermal processes are performed on the control wafers at a higher and the lower limit of a target temperature to enable ions to move partially from the sacrificial layer to the control wafers. The sacrificial layers on the control wafers are subsequently removed. The sheet resistance of the control wafers is measured to obtain a first and the second resistance value, which respectively correspond to the first and second temperatures. A wafer and a monitor wafer are provided. A thermal process is performed on the monitor wafer and the wafer at the target temperature. The sacrificial layer of the monitor wafer is removed, and the sheet resistance of the monitor wafer is subsequently measured.

Abstract: A method of water mark inspection. By forming a pattern on a test wafer, the water mark formed thereon directly reflects the features of a wafer product to be evaluated. The water mark is formed by simulating fabrication process conditions of forming the wafer product of which the performance is to be evaluated. Thus, after scanning the water mark by a defect inspection machine, the performance of the wafer product is evaluated.

Abstract: A method for determining the impurity concentration of impurity-doped polysilicon layers in semiconductor wafers is provided. Through experiments, it is found that the reflectivity of an impurity-doped polysilicon layer is nearly a regular function of the impurity concentration thereof. Accordingly, an impurity-doped polysilicon layer having an unknown impurity concentration can be determined by first measuring the reflectivity thereof by illuminating the impurity-doped polysilicon layer with light, and then using mapping transformation to find the corresponding value of impurity concentration of the impurity-doped polysilicon layer. This method can be used instead of the conventional thermal wave method that often result in having to discard the wafers due to the incapability of reliably determining the impurity concentration of the polysilicon layers formed on the semiconductor wafers.

Abstract: A method for probing the error of energy or dosage in the high-energy ion implantation is disclosed herein. The error source that is from either the energy of ion implantation or the dosage of ion implantation non-normal is decided via the thermal signal value and the thickness of the remained oxidation layer after etching step. The error source can be decided by using different decision standards for phosphorous ion implantation or boron ion implantation. The method comprises the steps as follow: a semiconductor silicon wafer is provided as a test wafer, and an oxidation layer is then formed over the test wafer. A high-energy ion implantation, such as phosphorous ion implantation or boron ion implantation is performed. The oxidation layer is etched via an etching process in a fixing etching time. The thickness of the remained oxidation layer after the etching process is probed. A thermal probe is applied to probe the thermal wave signal from the ion-implant-induced damage.

Abstract: A method of making a boot having an upper, a lower and a sole is disclosed. The method includes the step of connecting the lower to the sole in a water-tight relationship only after the lower is connected to the upper.