Abstract: The embodiments of the invention provides a semiconductor device and a method for manufacturing it The semiconductor device provided by the embodiments of the invention comprises: a first electrode layer; a substrate layer positioned on the first electrode layer; an epitaxy layer positioned on the substrate layer and comprising a first surface far from the substrate layer; a plurality of well regions disposed by extending from the first surface into the epitaxy layer and orthographic projections thereof on the first surface are spaced from each other; a second electrode layer, comprising first metal layers, each disposed between adjacent two of the well regions on the first surface and forms a Schottky contact with the epitaxy layer, wherein the Schottky contact has variable barrier height. The semiconductor device provided by the embodiments of the invention may improve the forward conduction ability without affecting the reverse blocking ability.

Abstract: The embodiments of the invention provides a semiconductor device and a method for manufacturing it The semiconductor device provided by the embodiments of the invention comprises: a first electrode layer; a substrate layer positioned on the first electrode layer; an epitaxy layer positioned on the substrate layer and comprising a first surface far from the substrate layer; a plurality of well regions disposed by extending from the first surface into the epitaxy layer and orthographic projections thereof on the first surface are spaced from each other; a second electrode layer, comprising first metal layers, each disposed between adjacent two of the well regions on the first surface and forms a Schottky contact with the epitaxy layer, wherein the Schottky contact has variable barrier height. The semiconductor device provided by the embodiments of the invention may improve the forward conduction ability without affecting the reverse blocking ability.

Abstract: A high power light emitting diode, The high power light emitting diode comprises a light emitting diode chip, a main module, two first electrode pins, two second electrode pins, and at least one heat dissipation board. The main module has a concave and the light emitting diode chip is positioned in the concave. The first electrode pins are connected to a first side of the main module and also electrically connected to the light emitting diode chip. The second electrode pins are arranged on a second side of the main module that is relative to the first electrode pins wherein the second electrode pins and the first electrode pins are electrically opposite. The second electrode pins are electrically connected to the light emitting diode chip. The heat dissipation board is connected to a part of the main module between the first electrode pin and the second electrode pin.

Abstract: A high power light emitting diode, The high power light emitting diode comprises a light emitting diode chip, a main module, two first electrode pins, two second electrode pins, and at least one heat dissipation board. The main module has a concave and the light emitting diode chip is positioned in the concave. The first electrode pins are connected to a first side of the main module and also electrically connected to the light emitting diode chip. The second electrode pins are arranged on a second side of the main module that is relative to the first electrode pins wherein the second electrode pins and the first electrode pins are electrically opposite. The second electrode pins are electrically connected to the light emitting diode chip. The heat dissipation board is connected to a part of the main module between the first electrode pin and the second electrode pin.

Abstract: A vertical trench-gate semiconductor device wherein the trench-gates extend in stripes, the source regions extend transversely between the trenchgates in stripes, projection (20) of the source stripes across the trench-gates defines intermediate trench portions (22) between the projected source stripes, and mutually spaced regions (14,14?) of the second conductivity type are to provided immediately below the intermediate trench portions (22) which are connected to source potential. The spaced regions serve to selectively shield portions of the trench-gate from the drain region to suppress their contribution to Cgd and hence Qgd. In particular, they shield those portions of the trenchgate which do not contribute to the channel width of the device, without restricting the current path where a channel is formed.

Abstract: A semiconductor device, for example a MOSFET or IGBT, includes a region (30, 36, 50) in the drain drift region (14) juxtaposed with its channel-accommodating region (15) and spaced from the drain contact region (14a) by means of an intermediate portion of the drift region. The region comprises alternating stripes (31, 32) of the first and second conductivity types, which stripes extend alongside the channel-accommodating region (15). In a trench gated device the stripes are elongated in a direction perpendicular to the trench walls. In a planar gate device the stripes extend around the periphery of the channel-accommodating region (15) leaving the region near the gate in a direction perpendicular with respect to the gate electrotes. The dimensions and doping levels of the stripes (31, 32) are selected such that region (30, 36, 50) provides a voltage-sustaining space-charge zone when depleted.

Abstract: A semiconductor device, for example a MOSFET or IGBT, includes a region (30, 36, 50) in the drain drift region (14) juxtaposed with its channel-accommodating region (15) and spaced from the drain contact region (14a) by means of an intermediate portion of the drift region. The region comprises alternating stripes (31, 32) of the first and second conductivity types, which stripes, extend alongside the channel-accommodating region (15). In a trench gated device the stripes are elongated in a direction perpendicular to the trench walls. In a planar gate device the stripes extend around the periphery of the channel-accommodating region (15) leaving the region near the gate in a direction perpendicular with respect to the gate electrotes. The dimensions and doping levels of the stripes (31, 32) are selected such that region (30, 36, 50) provides a voltage-sustaining space-charge zone when depleted.

Abstract: A metal-oxide-semiconductor trench-gate semiconductor device in which a substantially intrinsic region (40) is provided below the gate trench (20), which extends from the base of the trench, substantially across the drain drift region (14) towards the drain contact region (14a), such that when the drain-source voltage falls during turn-on of the device its rate of decrease is higher. This reduces the switching losses of the device. The substantially intrinsic region (40) may, for example, be formed by implanting a region below the trench (20) with a damage implant.

Abstract: A semiconductor rectifier includes an intermediate semiconductor region (29) extending between anode (9) and cathode (7) contacts. A trenched gate (19) with insulated sidewalls (15) and base (17) can deplete the intermediate region. However, a shield region (23) acts to shield the intermediate region (29) from the gate (19) to allow current to flow in dependence on the polarity of the voltage applied between anode and cathode contacts (9, 7).

Abstract: A semiconductor diode has a low bandgap layer (10) and an intermediate region (4) with a plurality of field relief regions (6, 8) extending between the low bandgap layer (10) and a first region (2) of opposite conductivity type. The field relief regions deplete the intermediate region in the off state of the diode.

Abstract: A bipolar p-i-n diode has a first (1) and second (5) region of opposite conductivity type and an intermediate drift region (3) between the first and second regions. Trenched field relief regions (14) are arranged to deplete the intermediate drift region (3) when the diode is reverse biased, so permitting a higher doping (12) to be used for the intermediate drift region (3) for a given breakdown voltage. This improves both the turn-on and turn-off characteristics of the diode.

Abstract: A semiconductor diode has a low bandgap layer (10) and an intermediate region (4) with a plurality of field relief regions (6, 8) extending between the low bandgap layer (10) and a first region (2) of opposite conductivity type. The field relief regions deplete the intermediate region in the off state of the diode.

Abstract: A metal-oxide-semiconductor trench-gate semiconductor device in which a substantially intrinsic region (40) is provided below the gate trench (20), which extends from the base of the trench, substantially across the drain drift region (14) towards the drain contact region (14a), such that when the drain-source voltage falls during turn-on of the device its rate of decrease is higher. This reduces the switching losses of the device. The substantially intrinsic region (40) may, for example, be formed by implanting a region below the trench (20) with a damage implant.

Abstract: A semiconductor rectifier includes an intermediate semiconductor region (29) extending between anode (9) and cathode (7) contacts. A trenched gate (19) with insulated sidewalls (15) and base (17) can deplete the intermediate region. However, a shield region (23) acts to shield the intermediate region (29) from the gate (19) to allow current to flow in dependence on the polarity of the voltage applied between anode and cathode contacts (9, 7).

Abstract: The invention relates to a so-called punch-through diode with a mesa (12) comprising, in succession, a first (1), a second (2) and a third (3) semiconductor region (1) of, respectively, a first, a second and the first conductivity type, which punch-through diode is provided with two connection conductors (5, 6). During operation of said diode, a voltage is applied such that the second semiconductor region (2) is fully depleted. A drawback of the known punch-through diode resides in that the current flow is too large at lower voltages. In a punch-through diode according to the invention, a part (2A, 2B) of the second semiconductor region (2), which, viewed in projection, borders on the edge of the mesa (12), is provided with a larger flux of doping atoms of the second conductivity type than the remainder (2A) of the second semiconductor region (2).

Abstract: A bipolar p-i-n diode has a first (1) and second (5) region of opposite conductivity type and an intermediate drift region (3) between the first and second regions. Trenched field relief regions (14) are arranged to deplete the intermediate drift region (3) when the diode is reverse biased, so permitting a higher doping (12) to be used for the intermediate drift region (3) for a given breakdown voltage. This improves both the turn-on and turn-off characteristics of the diode.

Abstract: In a field-effect semiconductor device, for example a power MOSFET, a body portion separates a channel-accommodating region from a drain region at a surface of a semiconductor body. This body portion includes a drift region which serves for current flow of charge carriers of a first conductivity type from the conduction channel to the drain region, in a conducting mode of the device. Instead of being a single region, the body portion also includes field-relief regions of the second conductivity type, which are depleted together with the drift region in a voltage blocking mode of the device to provide a voltage-carrying space-charge region. The drain region extends at least partially around the body portion at the surface, and the relief regions are located radially in this body portion.

Abstract: A trench-gate power device, for example a MOSFET, has a semiconductor body (10), for example of monocrystalline silicon, comprising a plurality of side-by-side body regions (3) which accommodate parallel conduction channels (12) adjacent the trench-gate structure (33,23,20) of the device. The channels (12) are connected in parallel between a first main electrode (21) which is common to side-by-side source regions (1) and a second region (2) which is common to the side-by-side body regions (3). The side-by-side source regions (1) comprise a layer (11) of narrow-bandgap semiconductor material (SixGe(1−x)) which is deposited on a major surface (10a) of the body (10) to form a source p-n heterojunction (31) with the side-by-side body regions (3) of the body (10). This narrow-bandgap semiconductor material (SixGe(1−x)) serves to suppress second breakdown of the power device, so improving its ruggedness.