Patents by Inventor Eddie T. Flores

Eddie T. Flores has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9263674
    Abstract: Methods and memory devices formed using etch bias homogenization are provided. One example method of forming a memory device using etch bias homogenization includes forming conductive material at respective levels over a substrate. Each respective level of conductive material is electrically coupled to corresponding circuitry on the substrate during patterning of the respective level of conductive material so that each respective level of conductive material has a homogenized etch bias during patterning thereof. Each respective level of conductive material electrically coupled to corresponding circuitry on the substrate is patterned.
    Type: Grant
    Filed: June 13, 2014
    Date of Patent: February 16, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Fabio Pellizzer, Hernan A. Castro, Eddie T. Flores
  • Publication number: 20140339493
    Abstract: Methods and memory devices formed using etch bias homogenization are provided. One example method of forming a memory device using etch bias homogenization includes forming conductive material at respective levels over a substrate. Each respective level of conductive material is electrically coupled to corresponding circuitry on the substrate during patterning of the respective level of conductive material so that each respective level of conductive material has a homogenized etch bias during patterning thereof. Each respective level of conductive material electrically coupled to corresponding circuitry on the substrate is patterned.
    Type: Application
    Filed: June 13, 2014
    Publication date: November 20, 2014
    Inventors: Fabio Pellizzer, Hernan A. Castro, Eddie T. Flores
  • Patent number: 8785314
    Abstract: Methods and memory devices formed using etch bias homogenization are provided. One example method of forming a memory device using etch bias homogenization includes forming conductive material at respective levels over a substrate. Each respective level of conductive material is electrically coupled to corresponding circuitry on the substrate during patterning of the respective level of conductive material so that each respective level of conductive material has a homogenized etch bias during patterning thereof. Each respective level of conductive material electrically coupled to corresponding circuitry on the substrate is patterned.
    Type: Grant
    Filed: May 3, 2012
    Date of Patent: July 22, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Fabio Pellizzer, Hernan A. Castro, Eddie T. Flores
  • Publication number: 20130292633
    Abstract: Methods and memory devices formed using etch bias homogenization are provided. One example method of forming a memory device using etch bias homogenization includes forming conductive material at respective levels over a substrate. Each respective level of conductive material is electrically coupled to corresponding circuitry on the substrate during patterning of the respective level of conductive material so that each respective level of conductive material has a homogenized etch bias during patterning thereof. Each respective level of conductive material electrically coupled to corresponding circuitry on the substrate is patterned.
    Type: Application
    Filed: May 3, 2012
    Publication date: November 7, 2013
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Fabio Pellizzer, Hernan A. Castro, Eddie T. Flores