Abstract: A method and system are provided for supplying power to a backup power domain by connecting a battery voltage to a supply terminal for a backup power domain in a low power microcontroller during a startup mode when a main supply voltage, by detecting application of the main supply voltage to the low power microcontroller at a predetermined safe voltage level, and by activating a selection control circuit to power the backup power domain in the low power microcontroller from the main power supply voltage or the backup power supply voltage based on a software-controlled configuration bit, where the selection control circuit is configured to connect, in response to the software-controlled configuration bit having a first user-selected value, the main power supply voltage to the supply terminal for the backup power domain when the main power supply voltage is smaller than the battery power supply voltage.

Abstract: An integrated circuit includes an analog-to-digital converter (ADC) configured to receive input voltage, and first and second reference voltages, and outputs digital code representing ratios between the input voltage and the first and the second reference voltages. The first and second reference voltages are generated by a reference generator using different current densities. During a first stage, the ADC samples the first input voltage and the first reference voltage and transfers equivalent charge of the sampled first input voltage and first reference voltage to an integration capacitor. During a second stage, the ADC samples the second reference voltage and transfers equivalent charge of the sampled second reference voltage to the integration capacitor. The ADC provides one bit of digital code based on total charge stored on the integration capacitor after the transfers of charge of the sampled input voltage, and the sampled first and second reference voltages.

Abstract: An integrated circuit includes an analog-to-digital converter (ADC) configured to receive input voltage, and first and second reference voltages, and outputs digital code representing ratios between the input voltage and the first and the second reference voltages. The first and second reference voltages are generated by a reference generator using different current densities. During a first stage, the ADC samples the first input voltage and the first reference voltage and transfers equivalent charge of the sampled first input voltage and first reference voltage to an integration capacitor. During a second stage, the ADC samples the second reference voltage and transfers equivalent charge of the sampled second reference voltage to the integration capacitor. The ADC provides one bit of digital code based on total charge stored on the integration capacitor after the transfers of charge of the sampled input voltage, and the sampled first and second reference voltages.

Abstract: A DC-DC converter operates in a burst mode having at least one charge cycle with a charging phase followed by a discharging phase. A charging phase is terminated when an inductor current flowing through an inductance connected to the DC-DC converter reaches a compensated peak-current threshold, wherein the compensated peak-current threshold compensates for charging-phase loop delay. A discharging phase is terminated when the inductor current reaches a compensated valley-current threshold, wherein the compensated valley-current threshold compensates for discharging-phase loop delay.

Abstract: A sensor may include: a first plurality of resistors; a first BJT having: a first base terminal, a collector terminal, and an emitter terminal, where the collector terminal is coupled to the first plurality of resistors; and a first amplifier having a first non-inverting input coupled to the collector terminal and an output terminal coupled to the base terminal. The sensor may include: a second plurality of resistors; a second BJT having: a base terminal, a collector terminal, and an emitter terminal, where the base terminal is coupled to the base terminal of the first BJT, where the collector terminal is coupled to the second plurality of resistors; and a second amplifier having an inverting input coupled to the collector terminal and an output terminal coupled to the emitter terminal, wherein the inverting input terminal of the first amplifier is coupled to a non-inverting input terminal of the second amplifier.

Abstract: A sensor may include: a first plurality of resistors; a first BJT having: a first base terminal, a collector terminal, and an emitter terminal, where the collector terminal is coupled to the first plurality of resistors; and a first amplifier having a first non-inverting input coupled to the collector terminal and an output terminal coupled to the base terminal. The sensor may include: a second plurality of resistors; a second BJT having: a base terminal, a collector terminal, and an emitter terminal, where the base terminal is coupled to the base terminal of the first BJT, where the collector terminal is coupled to the second plurality of resistors; and a second amplifier having an inverting input coupled to the collector terminal and an output terminal coupled to the emitter terminal, wherein the inverting input terminal of the first amplifier is coupled to a non-inverting input terminal of the second amplifier.

Abstract: A circuit including an amplitude detector. The amplitude detector includes an input to receive a signal having an amplitude voltage and a first pair of transistors configured in parallel. The input is coupled to the control terminal of at least one transistor of the first pair. The amplitude detector includes a first node providing a voltage indicative of the amplitude voltage. The first node is in series with each of the first pair of transistors. The circuit includes a compensation circuit. The compensation circuit includes a second pair of transistors configured in parallel and a second node. The second node is coupled in series with each transistor of the second pair. The circuit includes an amplifier including a first amplifier input coupled to the first node and a second amplifier input coupled to the second node.

Abstract: A circuit including an amplitude detector. The amplitude detector includes an input to receive a signal having an amplitude voltage and a first pair of transistors configured in parallel. The input is coupled to the control terminal of at least one transistor of the first pair. The amplitude detector includes a first node providing a voltage indicative of the amplitude voltage. The first node is in series with each of the first pair of transistors. The circuit includes a compensation circuit. The compensation circuit includes a second pair of transistors configured in parallel and a second node. The second node is coupled in series with each transistor of the second pair. The circuit includes an amplifier including a first amplifier input coupled to the first node and a second amplifier input coupled to the second node.

Abstract: Systems and methods for production test trimming acceleration. In an illustrative, non-limiting embodiment, a method may include providing a first trim code to a reference circuit, where the reference circuit is configured to output a first signal in response to the first trim code; integrating a difference between the first signal and a target voltage value into a first integrated value; providing a second trim code to the reference circuit, where the reference circuit is configured to output a second signal in response to the second trim code; integrating a difference between the second signal and the target voltage value into a second integrated value; and adjusting at least one of the first or second trim codes in response to a comparison between the first and second integrated values.

Abstract: Systems and methods for production test trimming acceleration. In an illustrative, non-limiting embodiment, a method may include providing a first trim code to a reference circuit, where the reference circuit is configured to output a first signal in response to the first trim code; integrating a difference between the first signal and a target voltage value into a first integrated value; providing a second trim code to the reference circuit, where the reference circuit is configured to output a second signal in response to the second trim code; integrating a difference between the second signal and the target voltage value into a second integrated value; and adjusting at least one of the first or second trim codes in response to a comparison between the first and second integrated values.

Abstract: A die temperature measurement system (300) includes an external test environment setup (352) and an integrated circuit (302). The external test environment setup (352) includes means to force and accurately measure electrical variables. The integrated circuit (302) includes a bipolar transistor (325); a selectable switch (340) for selecting from plurality of integrated resistances (342, 344) to be coupled in series between a base (322) of the bipolar transistor and a first input (362); and a selectable-gain current mirror (310) with a gain, a programmable current-mirror output coupled to the collector (326) of the bipolar transistor. The bipolar transistor and optional diodes (335) are sequentially biased with a set of proportional collector current levels. For each bias condition, the temperature-dependent voltage produced by the structure is extracted and stored. Die temperature is obtained through algebraic manipulation (450) of this data. Parasitic resistance and I/O pad leakage effects are canceled.

Abstract: A die temperature measurement system (300) includes an external test environment setup (352) and an integrated circuit (302). The external test environment setup (352) includes means to force and accurately measure electrical variables. The integrated circuit (302) includes a bipolar transistor (325); a selectable switch (340) for selecting from plurality of integrated resistances (342, 344) to be coupled in series between a base (322) of the bipolar transistor and a first input (362); and a selectable-gain current mirror (310) with a gain, a programmable current-mirror output coupled to the collector (326) of the bipolar transistor. The bipolar transistor and optional diodes (335) are sequentially biased with a set of proportional collector current levels. For each bias condition, the temperature-dependent voltage produced by the structure is extracted and stored. Die temperature is obtained through algebraic manipulation (450) of this data. Parasitic resistance and I/O pad leakage effects are canceled.

Abstract: A die temperature measurement system (300) includes an external test environment setup (352) and an integrated circuit (302). The external test environment setup (352) includes means to force and accurately measure electrical variables. The integrated circuit (302) includes a bipolar transistor (325); a selectable switch (340) for selecting from plurality of integrated resistances (342, 344) to be coupled in series between a base (322) of the bipolar transistor and a first input (362); and a selectable-gain current mirror (310) with a gain, a programmable current-mirror output coupled to the collector (326) of the bipolar transistor. The bipolar transistor and optional diodes (335) are sequentially biased with a set of proportional collector current levels. For each bias condition, the temperature-dependent voltage produced by the structure is extracted and stored. Die temperature is obtained through algebraic manipulation (450) of this data. Parasitic resistance and I/O pad leakage effects are canceled.

Abstract: A transconductance amplification stage (301) includes a differential pair (306) wherein a bias current flows through each transistor (302, 304) of the pair when input voltages are equal. Tail current boosting circuitry (320), which includes a tail transistor, provides a translinear expansion of tail current of the differential pair. A feedback loop (307) dynamically biases the differential pair to maintain current through one transistor (302) of the pair at the bias current value in spite of a difference between input voltages. Another transistor (304) of the pair provides an output current responsive to a difference between input voltages. The output current is not affected by a region of operation of the tail transistor. An output structure (300, 500) includes the transconductance amplification stage and a circuit (303) for mirroring the output current. An amplifier (800) includes the output structure as a buffer between other structures (801) and an output terminal.

Abstract: A transconductance amplification stage (301) includes a differential pair (306) wherein a bias current flows through each transistor (302, 304) of the pair when input voltages are equal. Tail current boosting circuitry (320), which includes a tail transistor, provides a translinear expansion of tail current of the differential pair. A feedback loop (307) dynamically biases the differential pair to maintain current through one transistor (302) of the pair at the bias current value in spite of a difference between input voltages. Another transistor (304) of the pair provides an output current responsive to a difference between input voltages. The output current is not affected by a region of operation of the tail transistor. An output structure (300, 500) includes the transconductance amplification stage and a circuit (303) for mirroring the output current. An amplifier (800) includes the output structure as a buffer between other structures (801) and an output terminal.

Abstract: A device includes a current source circuit to separately provide a first current and a second current and a thermal detection device coupleable to the output of the current source circuit. The device further includes a voltage detection circuit to provide a first indicator of a first voltage representative of a voltage at the thermal detection device in response to the second current and a second indicator of a second voltage representative of a voltage difference between the voltage at the thermal detection device in response to the second current and a voltage at the voltage detection device in response to the first current. The device further includes a temperature detection circuit to provide an over-temperature indicator based on the first indicator and the second indicator, wherein an operation of a circuit component of the device can be adjusted based on the over-temperature indicator.

Abstract: A die temperature sensor circuit (200) includes an amplifier (203) that has first and second stages of amplification and that has bipolar transistors (201 and 202) as an input differential pair. The bipolar transistors have different current densities. A difference between base-emitter voltages of the bipolar transistors is proportional to absolute temperature of the bipolar transistors. The bipolar transistors also provide amplification for the first stage of amplification. Multiple feedback loops maintain a same ratio between the current densities of the bipolar transistors over temperature by changing collector currents that bias the bipolar transistors. A feedback loop includes a second stage of amplification and such feedback loop cancels effect that base currents of the bipolar transistors have on an output signal of the die temperature sensor circuit.

Abstract: A die temperature sensor circuit (200) includes an amplifier (203) that has first and second stages of amplification and that has bipolar transistors (201 and 202) as an input differential pair. The bipolar transistors have different current densities. A difference between base-emitter voltages of the bipolar transistors is proportional to absolute temperature of the bipolar transistors. The bipolar transistors also provide amplification for the first stage of amplification. Multiple feedback loops maintain a same ratio between the current densities of the bipolar transistors over temperature by changing collector currents that bias the bipolar transistors. A feedback loop includes a second stage of amplification and such feedback loop cancels effect that base currents of the bipolar transistors have on an output signal of the die temperature sensor circuit.