Abstract: Aspects of the invention relate to techniques for determining pattern optical similarity in lithography. Optical kernel strength values for a first set of layout features and a second set of layout features are computed first. Based on the optical kernel strength values, optical similarity values between the first set of layout features and the second set of layout features are then determined. Subsequently, calibration weight values for the first set of layout features may be determined based on the optical similarity values, which, along with the first set of layout features, may be employed to calibrate lithography process model parameters.

Abstract: Aspects of the invention relate to techniques for determining pattern optical similarity in lithography. Optical kernel strength values for a first set of layout features and a second set of layout features are computed first. Based on the optical kernel strength values, optical similarity values between the first set of layout features and the second set of layout features are then determined. Subsequently, calibration weight values for the first set of layout features may be determined based on the optical similarity values, which, along with the first set of layout features, may be employed to calibrate lithography process model parameters.

Abstract: Aspects of the invention relate to techniques for determining pattern optical similarity in lithography. Optical kernel strength values for a first set of layout features and a second set of layout features are computed first. Based on the optical kernel strength values, optical similarity values between the first set of layout features and the second set of layout features are then determined. Subsequently, calibration weight values for the first set of layout features may be determined based on the optical similarity values, which, along with the first set of layout features, may be employed to calibrate lithography process model parameters.

Abstract: Aspects of the invention relate to techniques for determining pattern optical similarity in lithography. Optical kernel strength values for a first set of layout features and a second set of layout features are computed first. Based on the optical kernel strength values, optical similarity values between the first set of layout features and the second set of layout features are then determined. Subsequently, calibration weight values for the first set of layout features may be determined based on the optical similarity values, which, along with the first set of layout features, may be employed to calibrate lithography process model parameters.

Abstract: A method of determining calibration test patterns to be utilized to calibrate a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining a model equation representing the imaging performance of the optical imaging system; transforming the model equation into a plurality of discrete functions; identifying a calibration pattern for each of the plurality of discrete functions, where each calibration pattern corresponding to one of the plurality of discrete functions being operative for manipulating the one of the plurality of discrete functions during a calibration process; and storing the calibration test patterns identified as corresponding to the plurality of discrete functions. The calibration test patterns are then utilized to calibrate the model for simulating the imaging performance of an optical imaging system.

Abstract: A method of generating a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining the optical imaging system and a process to be utilized by the optical imaging system; and defining a model equation representing the imaging performance of the optical imaging system and the process, where the model equation includes a resist performance component, and the resist performance component includes a non-linear model of the resist performance.

Abstract: Methods for etching devices used for lithography. In one aspect, a method includes etching, in a single etch, a first region and a second region on a substrate. The first region is to attenuate an intensity of the zero diffraction order of a radiation for patterning of a microelectronic device to a first extent. The second region is to attenuate the intensity of the zero diffraction order of the radiation to a second extent. The second extent being sufficiently different from the first extent to improve a quality of the patterned microelectronic device.

Abstract: Various implementations of the invention provide methods and apparatus for calibrating models of an optical lithographic process. In various implementations, a complete model of an optical lithographic process may be formed by combining different physical ranges and components describing the optical lithographic process. With various implementations of the invention, an optical lithographic process model may be calibrated by generating and applying a set of test patterns to the optical lithographic process, identifying test patterns and associated measured results that correspond to the discrete components of the optical lithographic model, calibrating the discrete components of the optical lithographic model based on the identified test patterns and measured results, and combining the calibrated components into a complete model. In some implementations of the invention, the discrete components of the optical lithographic model represent different physical effects of the optical lithographic process.

Abstract: Systems and techniques for lithography. In one aspect, a method includes producing a microelectronic device by modulating an intensity and a phase of the zero diffraction order of a radiation with a device including subwavelength features having a pitch dimension smaller than one wavelength of the radiation.

Abstract: Systems and techniques for lithography. In one aspect, a method includes producing a microelectronic device by modulating an intensity and a phase of the zero diffraction order of a radiation with a device including subwavelength features having a pitch dimension smaller than one wavelength of the radiation.

Abstract: A method of calibrating a simulation model of a photolithography process. The method includes the steps of defining a set of input data; defining a simulation model having model parameters which affect the simulation result produced by the simulation model; performing a first stage calibration process in which the model parameters and alignment parameters are adjusted such that the simulation result is within a first predefined error tolerance; and performing a second stage calibration process in which the alignment parameters are fixed and the model parameters are adjusted such that the simulation result is within a second predefined error tolerance.

Abstract: A method of determining calibration test patterns to be utilized to calibrate a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining a model equation representing the imaging performance of the optical imaging system; transforming the model equation into a plurality of discrete functions; identifying a calibration pattern for each of the plurality of discrete functions, where each calibration pattern corresponding to one of the plurality of discrete functions being operative for manipulating the one of the plurality of discrete functions during a calibration process; and storing the calibration test patterns identified as corresponding to the plurality of discrete functions. The calibration test patterns are then utilized to calibrate the model for simulating the imaging performance of an optical imaging system.

Abstract: A method of generating a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining the optical imaging system and a process to be utilized by the optical imaging system; and defining a model equation representing the imaging performance of the optical imaging system and the process, where the model equation includes a resist performance component, and the resist performance component includes a non-linear model of the resist performance.

Abstract: A lithography system may utilize a biased sidewall chrome alternating aperture mask (SCAAM). Glass steps in the mask may be positioned at the center of the chrome sidewalls in chrome lines rather than the center of the chrome lines themselves.

Abstract: A method of calibrating a simulation model of a photolithography process. The method includes the steps of defining a set of input data; defining a simulation model having model parameters which affect the simulation result produced by the simulation model; performing a first stage calibration process in which the model parameters and alignment parameters are adjusted such that the simulation result is within a first predefined error tolerance; and performing a second stage calibration process in which the alignment parameters are fixed and the model parameters are adjusted such that the simulation result is within a second predefined error tolerance.

Abstract: A focus monitor on an alternating phase shift mask may include sub-wavelength features which have a depth corresponding to an etch depth of primary features on the mask (e.g., a 180° etch depth), but which produce an effective phase shift of about 60° to 120°.

Abstract: An extreme (EUV) lithography system includes optical elements which vary the wavelengths of radiation as a function of the angle of incidence on a mask to maximize the reflected radiation intensity.

Abstract: Systems and techniques for lithography. In one aspect, a method includes producing a microelectronic device by modulating an intensity and a phase of the zero diffraction order of a radiation with a device including subwavelength features having a pitch dimension smaller than one wavelength of the radiation.

Abstract: An extreme (EUV) lithography system includes optical elements which vary the wavelengths of radiation as a function of the angle of incidence on a mask to maximize the reflected radiation intensity.

Abstract: A focus monitor on an alternating phase shift mask may include sub-wavelength features which have a depth corresponding to an etch depth of primary features on the mask (e.g., a 180° etch depth), but which produce an effective phase shift of about 60° to 120°.