Patents by Inventor Edith Bourret-Courchesne
Edith Bourret-Courchesne has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9963356Abstract: The present invention provides for a composition comprising an inorganic scintillator comprising an alkali metal hafnate, optionally cerium-doped, having the formula A2HfO3:Ce; wherein A is an alkali metal having a valence of 1, such as Li or Na; and the molar percent of cerium is 0% to 100%. The alkali metal hafnate are scintillators and produce a bright luminescence upon irradiation by a suitable radiation.Type: GrantFiled: October 30, 2008Date of Patent: May 8, 2018Assignee: The Regents of the University of CaliforniaInventors: Edith Bourret-Courchesne, Stephen E. Derenzo, Scott Edward Taylor
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Patent number: 9404036Abstract: The present invention provides for a composition comprising an inorganic scintillator comprising a gadolinium halide, optionally cerium-doped, having the formula AnGdXm:Ce; wherein A is nothing, an alkali metal, such as Li or Na, or an alkali earth metal, such as Ba; X is F, Br, Cl, or I; n is an integer from 1 to 2; m is an integer from 4 to 7; and the molar percent of cerium is 0% to 100%. The gadolinium halides or alkali earth metal gadolinium halides are scintillators and produce a bright luminescence upon irradiation by a suitable radiation.Type: GrantFiled: October 30, 2008Date of Patent: August 2, 2016Assignee: The Regents of the University of CaliforniaInventors: Edith Bourret-Courchesne, Stephen E. Derenzo, Shameka Parms, Yetta D. Porter-Chapman, Latoria K. Wiggins
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Patent number: 9053832Abstract: The present invention provides for a composition comprising an inorganic scintillator comprising an optionally lanthanide-doped strontium-barium, optionally cesium, halide, useful for detecting nuclear material.Type: GrantFiled: October 12, 2011Date of Patent: June 9, 2015Assignee: The Regents of the University of CaliforniaInventors: Gregory Bizarri, Edith Bourret-Courchesne, Stephen E. Derenzo, Ramesh B. Borade, Gautam Gundiah, Zewu Yan, Stephen M. Hanrahan, Anurag Chaudhry, Andrew Canning
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Patent number: 8486300Abstract: The present invention provides for a composition comprising an inorganic scintillator comprising a lanthanide-doped strontium barium mixed halide useful for detecting nuclear material.Type: GrantFiled: January 6, 2011Date of Patent: July 16, 2013Assignee: The Regents of the University of CaliforniaInventors: Gautam Gundiah, Gregory Bizarri, Stephen M. Hanrahan, Edith Bourret-Courchesne, Stephen E. Derenzo
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Patent number: 8384035Abstract: The present invention provides for a composition comprising an inorganic scintillator comprising a lanthanide-doped barium phosphorous oxide useful for detecting nuclear material.Type: GrantFiled: October 25, 2010Date of Patent: February 26, 2013Assignee: The Regents of the University of CaliforniaInventors: Ramesh B. Borade, Edith Bourret-Courchesne, Stephen E. Derenzo
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Patent number: 8304748Abstract: Herein is described a method for identifying semiconductor radiation detector materials based on the mobility of internally generated electrons and holes. It was designed for the early stages of exploration, when samples are not available as single crystals, but as crystalline powders. Samples are confined under pressure in an electric field and the increase in current resulting from exposure to a high-intensity source of ionization current (e.g., 60Co gamma rays) is measured. A pressure cell device is described herein to carry out the method. For known semiconductors, the d.c. ionization current depends on voltage according to the Hecht equation, and for known insulators the d.c. ionization current is below detection limits. This shows that the method can identify semiconductors in spite of significant carrier trapping. Using this method and pressure cell, it was determined that new materials BiOI, PbIF, BiPbO2Cl, BiPbO2Br, BiPbO2I, Bi2GdO4Cl, Pb3O2I2, and Pb5O4I2 are semiconductors.Type: GrantFiled: October 19, 2006Date of Patent: November 6, 2012Assignee: The Regents of the University of CaliforniaInventors: Stephen E. Derenzo, Edith Bourret-Courchesne, Yetta D. Porter-Chapman, Floyd J. James, Mattias K. Klintenberg, Jie Wang, Jia-Qing Wang, legal representative
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Publication number: 20120193539Abstract: The present invention provides for a composition comprising an inorganic scintillator comprising an optionally lanthanide-doped strontium-barium, optionally cesium, halide, useful for detecting nuclear material.Type: ApplicationFiled: October 12, 2011Publication date: August 2, 2012Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Gregory Bizarri, Edith Bourret-Courchesne, Stephen E. Derenzo, Ramesh B. Borade, Gautam Gundiah, Zewu Yan, Stephen M. Hanrahan, Anurag Chaudhry, Andrew Canning
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Publication number: 20110168901Abstract: The present invention provides for a composition comprising an inorganic scintillator comprising a lanthanide-doped barium phosphorous oxide useful for detecting nuclear material.Type: ApplicationFiled: October 25, 2010Publication date: July 14, 2011Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Ramesh B. Borade, Edith Bourret-Courchesne, Stephen E. Derenzo
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Publication number: 20110165422Abstract: The present invention provides for a composition comprising an inorganic scintillator comprising a lanthanide-doped strontium barium mixed halide useful for detecting nuclear material.Type: ApplicationFiled: January 6, 2011Publication date: July 7, 2011Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Gautam Gundiah, Gregory Bizarri, Stephen M. Hanrahan, Edith Bourret-Courchesne, Stephen E. Derenzo
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Publication number: 20090212395Abstract: Herein is described a method for identifying semiconductor radiation detector materials based on the mobility of internally generated electrons and holes. It was designed for the early stages of exploration, when samples are not available as single crystals, but as crystalline powders. Samples are confined under pressure in an electric field and the increase in current resulting from exposure to a high-intensity source of ionization current (e.g., 60Co gamma rays) is measured. A pressure cell device is described herein to carry out the method. For known semiconductors, the d.c. ionization current depends on voltage according to the Hecht equation, and for known insulators the d.c. ionization current is below detection limits. This shows that the method can identify semiconductors in spite of significant carrier trapping. Using this method and pressure cell, it was determined that new materials BiOI, PbIF, BiPbO2Cl, BiPbO2Br, BiPbO2I, Bi2GdO4Cl, Pb3O2I2, and Pb5O4I2 are semiconductors.Type: ApplicationFiled: October 19, 2006Publication date: August 27, 2009Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Stephen E. Derenzo, Edith Bourret-Courchesne, Yetta D. Porter-Chapman, Floyd J. James, Mattias K. Klintenberg, Jie Wang, Jia-Qing Wang
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Publication number: 20090166585Abstract: The present invention provides for a composition comprising an inorganic scintillator comprising a gadolinium halide, optionally cerium-doped, having the formula AnGdXm:Ce; wherein A is nothing, an alkali metal, such as Li or Na, or an alkali earth metal, such as Ba; X is F, Br, Cl, or I; n is an integer from 1 to 2; m is an integer from 4 to 7; and the molar percent of cerium is 0% to 100%. The gadolinium halides or alkali earth metal gadolinium halides are scintillators and produce a bright luminescence upon irradiation by a suitable radiation.Type: ApplicationFiled: October 30, 2008Publication date: July 2, 2009Applicant: The Regents of the University of CaliforniaInventors: Edith Bourret-Courchesne, Stephen E. Derenzo, Shameka Parms, Yetta D. Porter-Chapman, Latoria K. Wiggins
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Publication number: 20090148375Abstract: The present invention provides for a composition comprising an inorganic scintillator comprising an alkali metal hafnate, optionally cerium-doped, having the formula A2HfO3:Ce; wherein A is an alkali metal having a valence of 1, such as Li or Na; and the molar percent of cerium is 0% to 100%. The alkali metal hafnate are scintillators and produce a bright luminescence upon irradiation by a suitable radiation.Type: ApplicationFiled: October 30, 2008Publication date: June 11, 2009Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Edith Bourret-Courchesne, Stephen E. Derenzo, Scott Edward Taylor
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Patent number: 7404913Abstract: Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.Type: GrantFiled: May 11, 2006Date of Patent: July 29, 2008Assignee: The Regents of the University of CaliforniaInventors: Stephen Edward Derenzo, Edith Bourret-Courchesne, Marvin J. Weber, Mattias K. Klintenberg
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Publication number: 20060219928Abstract: Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.Type: ApplicationFiled: May 11, 2006Publication date: October 5, 2006Applicant: The Regents of the University of CaliforniaInventors: Stephen Derenzo, Edith Bourret-Courchesne, Marvin Weber, Mattias Klintenberg
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Patent number: 7048872Abstract: Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.Type: GrantFiled: September 15, 2003Date of Patent: May 23, 2006Assignee: The Regents of the University of CaliforniaInventors: Stephen E. Derenzo, Edith Bourret-Courchesne, Marvin J. Weber, Mattias K. Klintenberg
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Publication number: 20040108492Abstract: Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.Type: ApplicationFiled: September 15, 2003Publication date: June 10, 2004Inventors: Stephen E. Derenzo, Edith Bourret-Courchesne, Marvin J. Weber, Mattias K. Klintenberg