Patents by Inventor Edmund Kaminsky, Jr.

Edmund Kaminsky, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making GaN-based high electron mobility transistor
    Patent number: 7851284
    Abstract: A high electron mobility transistor including: a GaN material system based heterostructure; a passivating nitride layer over the heterostructure and defining a plurality of openings; and a plurality of electrical contacts for the heterostructure and formed through the openings.
    Type: Grant
    Filed: October 30, 2007
    Date of Patent: December 14, 2010
    Assignee: Lockheed Martin Corporation
    Inventors: An-Ping Zhang, James Kretchmer, Edmund Kaminsky, Jr.