Abstract: In one embodiment, a system for managing secure communications includes an interface that may receive communication between a first endpoint and a second endpoint. A processor may identify a security certificate included in the communication and determine whether the identified security certificate has previously been stored in a certificate database. If the security certificate has not been previously stored in a certificate database, the processor may store the identified security certificate in the certificate database. The processor may also analyze parameters of the identified security certificate including a host device using the certificate, a network administrator responsible for the host device, an expiration date of the security certificate, and a certification authority issuing the security certificate.

Abstract: In one embodiment, a system for managing secure communications includes an interface that may receive communication between a first endpoint and a second endpoint. A processor may identify a security certificate included in the communication and determine whether the identified security certificate has previously been stored in a certificate database. If the security certificate has not been previously stored in a certificate database, the processor may store the identified security certificate in the certificate database. The processor may also analyze parameters of the identified security certificate including a host device using the certificate, a network administrator responsible for the host device, an expiration date of the security certificate, and a certification authority issuing the security certificate.

Abstract: A method and a system for forming a root pass weld for a root pipe joint. A substantially periodic electric welding waveform is generated and a series of electric arc pulses are generated between an advancing welding electrode and a root pipe joint in response to the electric welding waveform. The electric welding waveform includes a base cycle having a background current phase providing a background current level, a peak current phase providing a peak current level, a tail-out current phase providing a decreasing tail-out current level, and at least one heat-increasing current pulse during the background current phase providing a heat-increasing current level being above the background current level.

Abstract: A laser sensor to scan the weld joint either before welding begins as a pre-weld scanning operation or in real time during welding to provide adaptive control of the arc welding parameters. A “line” type laser sensor device projects a laser line within a fixed operating window. The line laser produces a reflective position of anything that the laser line “sees” within the operating window. By triangulation, the exact distance an object is from the laser can be measured at any point along the “line” of the laser. Certain parts of the weld bevel are targeted for measurement. The measurements are stored in an electronic storage medium and a data processor. The stored measurements and data processor are used in conjunction with automated welding equipment to adjust the welding parameters as required. Because the exact joint/weld geometry is then known for every portion of the weld, the welding equipment can then respond or “adapt” to variations in the weld joint between the work pieces.

Abstract: A narrow groove GMAW torch for thick section welding that addresses the problems of conventional welding torches. A main body portion has a power block with electrical, feed welding wire, water cooling, and shielding gas connections and a contact tip. A dielectric is attached to the main body portion and has a primary shield gas outlet. A gas shield attached to the dielectric defines an annulus between them that functions as a secondary gas shield. A diffusing gas outlet in the dielectric delivers shielding gas to the weld area. The contact tip attached to the power block is designed to receive and control the curvature of the feed welding wire.

Abstract: A hydro or aero kinetic energy device (100) includes a hydrofoil-shaped blade and rotor system (11) made from composite and membrane flexible materials with an innovative system design to create a large, but relatively light-weight hydrokinetic turbine that achieves disruptively low deployment cost and low Cost of Electricity (COE), in high volumetric flow rate, low velocity (1-3 m/s) marine or air currents. The system (100) continually senses the current (12, 14) at the deployment site and based on the current profile, adjusts the pitch of the blades in real-time, thereby leveling out the forces on the turbine rotor. The hydrokinetic energy device turbine (100) may be assembled onshore, on the way to the deployment site or at the deployment site Further, be turbine may include a remote control receiver mechanism (77), that allows an operator to remotely controlled the maneuvering and other aspects of the turbine (100) during deployment, operation and maintenance.

Abstract: A method and a system for forming a root pass weld for a root pipe joint. A substantially periodic electric welding waveform is generated and a series of electric arc pulses are generated between an advancing welding electrode and a root pipe joint in response to the electric welding waveform. The electric welding waveform includes a base cycle having a background current phase providing a background current level, a peak current phase providing a peak current level, a tail-out current phase providing a decreasing tail-out current level, and at least one heat-increasing current pulse during the background current phase providing a heat-increasing current level being above the background current level.

Abstract: The Lawnsaver is the answer to a problem caused by rainwater rushing out of downspouts. The holes placed on three different sides of the Lawnsaver sprinkles water in a large area rather than in one location. The design also reduces the velocity of the water, which otherwise, causes trenches to be cut in your yard or washes out your landscaping.

Abstract: A halo implant (42, 44) for an MOS transistor (10) is formed in a semiconductor substrate (12) at a shallow implant angle, relative to normal to the substrate surface (29). A polysilicon gate structure (32, 33) is formed over a gate oxide (28) and then a hard mask (70), such as a TEOS-generated layer of silicon oxide, is deposited on an upper surface (68) of the gate. The mask is etched with a blanket anisotropic etch to form a cap-shaped mask (72). The shape of the cap causes the dopant for the halo implant to penetrate to a depth which follows the contour of the cap. Thus, halo implants may be formed which extend under the gate structure without the need for large angle implants and resultant shadowing problems caused by adjacent devices.

Abstract: A halo implant (42, 44) for an MOS transistor (10) is formed in a semiconductor substrate (12) at a shallow implant angle, relative to normal to the substrate surface (29). A polysilicon gate structure (32, 33) is formed over a gate oxide (28) and then a hard mask (70), such as a TEOS-generated layer of silicon oxide, is deposited on an upper surface (68) of the gate. The mask is etched with a blanket anisotropic etch to form a cap-shaped mask (72). The shape of the cap causes the dopant for the halo implant to penetrate to a depth which follows the contour of the cap. Thus, halo implants may be formed which extend under the gate structure without the need for large angle implants and resultant shadowing problems caused by adjacent devices.

Abstract: A halo implant (42, 44) for an MOS transistor (10) is formed in a semiconductor substrate (12) at a shallow implant angle, relative to normal to the substrate surface (29). A polysilicon gate structure (32, 33) is formed over a gate oxide (28) and then a hard mask (70), such as a TEOS-generated layer of silicon oxide, is deposited on an upper surface (68) of the gate. The mask is etched with a blanket anisotropic etch to form a cap-shaped mask (72). The shape of the cap causes the dopant for the halo implant to penetrate to a depth which follows the contour of the cap. Thus, halo implants may be formed which extend under the gate structure without the need for large angle implants and resultant shadowing problems caused by adjacent devices.

Abstract: A method of manufacturing a semiconductor device using shallow trench isolation is provided, wherein a plurality of protrusions are formed in the exposed surface of the mask layer overlying the active area of the device. The protrusions are preferably formed by forming a photo-resist layer on the surface of the mask layer and patterning the photo-resist layer such that the photo-resist layer defines a plurality of protrusion areas and a depression area within the defined active area. A portion of the mask layer is removed in the defined depression area to form a plurality of protrusions in the mask layer. Thereafter, a dielectric layer is deposited on the exposed surface of the mask layer and in the shallow trench and evenly planarized.

Abstract: A machine for finishing substantially cup-shaped blanks that are to comprise the bodies of saucepans or the like has a table on which the blanks slide horizontally, bottom wall down. They are advanced along the table from station to station by a shuttle conveyor comprising opposite horizontal clamping plates that converge edgewise to engage opposite side wall portions of blanks, move forwardly while converged, then diverge and move rearward to an idle position. At one station there is a hole in the table, and each blank is delivered concentrically onto a freely rotatable tail stock which is in a lowered position in said hole with its top surface level with the table surface. The tail stock rises to clamp the bottom wall of the blank against a concentric continuously rotating driver head spaced above the table.